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SEMI P38-1103 © SEMI 2002, 2003 1 SEMI P38-1103 SPECIFICATION FOR ABSORBING FILM STACKS AND MULTILAYERS ON EXTREME ULTRAVIOLET LI THOGRAPHY MASK BLANKS This specification was technically approved by the Global Mi cropatt…

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SEMI P37-1102 © SEMI 2001, 2002 10
RELATED INFORMATION 1
MATERIAL PROPERTIES
NOTE: This related information is not an official part of SEMI P37 and was derived from the work of the
originating committee. This related information was approved for publication by full letter ballot procedures on
August 27, 2001.
Table A1-1 Typical EUVL Mask Substrate Bulk Material Properties (for information only)
Property Symbol NZTE
Mean Specific Heat C
p
(J/kg-°C) 750–820
Thermal Conductivity K (W/m-°C) 1.3–1.6
Density ρ (g/cm
3
) 2.1–2.6
Elastic Modulus E (GPa) 65–91
Poisson’s Ratio ν 0.17–0.25
Index of refraction n 1.4–1.6
Electrical conductivity at 20°C σ (Siemens/m) 10
-14
–10
-18
Dielectric constant ε at 1 KHz 3.5–9.0
NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for any
particular application. The determination of the suitability of the standard is solely the responsibility of the user.
Users are cautioned to refer to manufacturer's instructions, product labels, product data sheets, and other relevant
literature respecting any materials mentioned herein. These standards are subject to change without notice.
By publication of this standard, SEMI takes no position respecting the validity of any patent rights or copyrights
asserted in connection with any item mentioned in this standard. Users of this standard are expressly advised that
determination of any such patent rights or copyrights, and the risk of infringement of such rights, are entirely their
own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI P38-1103 © SEMI 2002, 2003 1
SEMI P38-1103
SPECIFICATION FOR ABSORBING FILM STACKS AND MULTILAYERS
ON EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANKS
This specification was technically approved by the Global Micropatterning Committee and is the direct
responsibility of the North American Microlithography Committee. Current edition approved by the North
American Regional Standards Committee on September 3, 2003. Initially available at www.semi.org
October 2003; to be published November 2003. Originally published November 2002.
1 Purpose
1.1 This specification covers the requirements of the
multilayer coating and of the absorbing film stack on
Extreme Ultraviolet Lithography (EUVL) masks.
2 Scope
2.1 This standard details the physical characteristics
and tolerances required for EUVL mask multilayer
coatings. Material composition is not specified to allow
for innovation in materials.
2.2 This standard details the physical characteristics
and tolerances required for EUVL mask absorbing film
stacks. The absorbing film stack comprises two or
more layers. Material composition is not specified to
allow for innovation in materials.
2.3 For purposes of this standard, the supplier
fabricates the mask blank and provides it to the user. In
most cases, the user patterns some of the layers on the
front side of the mask blank.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Referenced Standards
3.1 SEMI Standards
SEMI P37 — Specification For Extreme Ultraviolet
Lithography Mask Substrates
3.2 ANSI/ASQC Standards
1
ANSI/ASQC Z1.4 Sampling Procedures and Tables
for Inspection by Attributes
1 American National Standards Institute, Headquarters: 1819 L
Street, NW, Washington, DC 20036, USA. Telephone: 202.293.8020;
Fax: 202.293.9287, New York Office: 11 West 42nd Street, New
York, NY 10036, USA. Telephone: 212.642.4900; Fax:
212.398.0023, Website: www.ansi.org
3.3 ISO Standard
2
ISO 14644-1 Cleanrooms and Associated Controlled
Environments Part 1: Classification of Air Cleanliness
NOTICE: Unless otherwise indicated, all documents
cited shall be the latest published versions.
4 Terminology
4.1 Definitions
4.1.1 absorber layers — one or more layers of material
that absorb EUV radiation and are patterned in the
mask fabrication process. These layers are deposited
on top of the buffer layer (see Figure 1).
4.1.2 absorber stack — stack of film layers that
includes the absorber layer or layers and the buffer
layer. (See Figure 1.)
4.1.3 buffer layer — layer of material beneath the
absorber layer or layers. See Figure 1. This layer is
patterned on the final mask.
4.1.4 capping layer — layer or layers on top of the
multilayers are not patterned. (See Figure 1.)
4.1.5 conductive layer — layer deposited on the
backside of the EUV mask substrate that is electrically
conductive. (See Figure 1.)
4.1.6 defect — any flaw or imperfection in the opaque
coating, reflective multilayer coating, or functional
pattern of a mask that will reproduce itself in a
photoresist film and impair the proper functioning of
the microelectronic device being fabricated.
4.1.7 EUV — extreme ultraviolet radiation with
wavelength in the range of 4 to 20 nm.
4.1.8 multilayer stack — stack of film layers that
includes layers deposited on the mask blank to provide
high EUV reflectivity, any capping layers and any
underlayers. (See Figure 1.)
2 International Organization for Standardization, ISO Central
Secretariat, 1, rue de Varembé, Case postale 56, CH-1211 Geneva 20,
Switzerland. Telephone: 41.22.749.01.11; Fax: 41.22.733.34.30,
Website: www.iso.ch
SEMI P38-1103 © SEMI 2002, 2003 2
4.1.9 multilayers —film stack with layer materials and
thickness values selected to produce high reflectivity of
incident EUV radiation. (See Figure 1.)
4.1.10 resist — layer of radiation-sensitive material
patterned in the lithography process for fabricating the
mask. See Figure 1.
4.1.11 underlayers — layer or layers between the
multilayers and the EUV mask substrate, which is
described by SEMI P37-1101. (See Figure 1.)
5 Ordering Information
5.1 Purchase orders must include the type of mask
blank. Table 1 shows the layers that are included in
each mask type.
5.2 Purchase orders for EUVL masks furnished to this
specification shall include the items listed in Table 2.
6 Area covered by requirements
6.1 Layer Quality Area — A layer quality area with
width, W
L
, and height, D
L
, shall be agreed upon
between user and supplier. Figure 2 shows the labeling
of the dimensions of the layer quality area. The layer
quality area may be smaller than the edge length, L, of
the mask substrate, which is defined in SEMI P37. The
layer quality area is the region where the multilayer
stack and absorber stack properties are specified in
Section 7. The multilayer, capping, absorber layer(s)
and buffer layer properties are also specified only in the
layer quality area.
6.1.1 Specifications for the layers and layer stacks
outside the layer quality area are agreed upon between
user and supplier.
6.2 Defect Quality Area — A defect quality area, with
width, W
d
, and height, D
d
, shall be agreed upon
between the user and supplier. Figure 3 shows the
labeling of the dimensions of the defect quality area.
The defect quality area may or may not be identical to
the area described in Section 9.1 of SEMI P37. The
defect quality area may be smaller than the edge length,
L, of the mask substrate, which is defined in SEMI P37.
The defect quality area is not necessarily the same as
the layer quality area described in Section 6.1.
6.2.1 Specifications for defects outside the defect
quality area are agreed upon between user and supplier.
7 Layer properties
7.1 The multilayer stack attributes and properties are
defined in Table 3. The EUV reflectivity requirements
are defined in Tables 4 and 5, and the EUV reflectivity
uniformity requirements are defined in Table 6. Figure
4 illustrates the EUV reflectivity parameters. The
median wavelength is defined as shown, and the peak
reflectivity might not occur at the median wavelength.
The optical properties of the multilayer stack at
wavelengths besides EUV wavelengths are defined in
Table 10.
7.2 The buffer layer requirements are shown in
Table 7. The optical properties of the buffer layer at
wavelengths besides EUV wavelengths are defined in
Table 10. The reflectivity requirements in Table 10
apply to the buffer layer as deposited on top of the
multilayer stack. By mutual agreement between the
user and supplier, the range of wavelengths for mean
reflectivity requirement may be reduced to a subset of
the range shown in Table 10.
7.3 The absorber layer requirements are defined in
Table 8.
7.4 The requirements for the absorber stack are defined
in Table 9. The optical properties of the absorber stack
at wavelengths besides EUV wavelengths are shown in
Table 11. The reflectivity requirements in Tables 9 and
11 apply to the absorber stack as deposited on top of the
multilayer stack. By mutual agreement between the
user and supplier, the range of wavelengths for mean
reflectivity requirement may be reduced to a subset of
the range shown in Table 11.
7.5 At all points on the backside of the mask blank, the
sheet resistance should be ≤ 100 Ohms/square. The
requirements for the conductive layer on the backside
of the substrate are shown in Table 12.
8 Defects
8.1 The multilayer stack must be inspected for defects
before deposition of the buffer layer and absorber
layer(s). The multilayer stack must meet the defect
requirements shown in Table 13.
8.2 The absorber stack must meet the defect
requirements shown in Table 14. For Type 3 mask
blanks, the resist and absorber stack must meet the
defect requirements shown in Table 14.
8.3 The location and size of all defects in the
mulitlayer or absorber stacks that were located by the
supplier will be provided to the user. The required
accuracy and reference point(s) for these locations will
be negotiated between user and supplier.
8.4 Mask blanks must meet the backside defect
requirements in Section 9.3 of SEMI P37.
9 Flatness Specifications
9.1 The flatness of the mask blank shall be agreed upon
between user and supplier.