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SEMI M24-1103 © SEMI 1994, 2003 11 CLASSIFICATION ITEMS (SEMI M18) Particle Counting Furnace & Thermal Process Lithography & Patterning Test Method 1.4 Dopant P or B P or B P or B ASTM F 1389, F 1630, DIN 50438/3…

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SEMI M24-1103 © SEMI 1994, 2003 10
CLASSIFICATION ITEMS (SEMI M18) Particle Counting
Furnace & Thermal
Process
Lithography &
Patterning
Test Method
8.11 Mounds None None None ASTM F 154, F 523,
JIS H 614
8.12 Orange Peel None None None ASTM F 154, F 523,
JIS H 614
8.14 Saw Marks None None None ASTM F 154, F 523,
JIS H 614
8.15 Dopant Striation Ring None None None ASTM F 154, F 523,
JIS H 614
8.- Microroughness NS NS NS
9. BACK SURFACE VISUAL INSPECTION CHARACTERISTICS
9.1 Edge Chips None None None ASTM F 154, F 523,
JIS H 614
9.6 Roughness, rms NS NS NS
9.7 Brightness (Gloss) 300 mm ≥ 80%
200 mm NS
300 mm ≥ 80%
200 mm NS
300 mm ≥ 80%
200 mm NS
ASTM D 523,
JIS Z8741
9.8 Localized Light Scatterers (LLSs) NS NS NS ASTM F 523,
F 1620, F 1621,
JIS H 614
9.9 Scratches, Macro
≤ 0.25 × D mm ≤ 0.25 × D mm ≤ 0.25 × D mm
ASTM F 154, F 523,
JIS H 614
9.10 Scratches, Micro NS NS NS ASTM F 154
NOTE 1: Nominal Edge Exclusion: 2 mm can be achievable in new 300 mm equipment; however, it will be difficult in conventional 200 mm
equipment. Edge Exclusion Task Force is now making activities for developing a guide containing definition of edge exclusion when a
measurement is made over a finite sampling area.
NOTE 2: Wafer ID Marking: SEMI M1 specification shall be applied, if ID mark is applied.
NOTE 3: LLSs: LLSs for particle counting wafer is specified only by the half size of design rule. These specification values shall be reviewed
when the evaluation techniques for distinguishing particle and COP are established. The nominal particle size can be transferred to another
particle size using coefficient value and the latter can be applicable for the usage.
NOTE 4: Carrier Recombination Lifetime: Carrier recombination lifetime is affected by carrier concentration (resistivity) and metallic impurities.
Specified resistivity and bulk iron concentration are only necessary conditions for obtaining the specified carrier recombination lifetime.
NOTE 5: Surface Metal Contamination for Furnace and Thermal Process: The proposed specification values are recommended ones considering
NTRS 1997 and current measuring technology and accuracy.
NOTE 6: Surface Metal Contamination for Particle Counting and Lithography & Patterning: The values are proposed considering current process
capabilities and the necessary level for their usage.
NOTE 7: LLSs for Furnace & Thermal Process and Lithography & Patterning: The values are proposed considering current process capabilities
and the necessary level for their usage.
NOTE 8: The nominal particle size can be transferred to another particle size using coefficient value and the latter can be applicable for the
usage.
NOTE 9: ASTM F47-94 (Discontinued 1998) was replaced by ASTM Guide F1725, and ASTM F416-94 (Discontinued 1998) was replaced by
ASTM Practice F1727.
Table 4 Specification Guide for Polished Monocrystalline Silicon Premium Wafers for 130 nm Design Rule
Usage
CLASSIFICATION ITEMS (SEMI M18) Particle Counting
Furnace &
Thermal Process
Lithography &
Patterning
Test Method
1. GENERAL CHARACTERISTICS
1.1 Growth Method Cz or MCz Cz or MCz Cz or MCz
1.2. Crystal Orientation (100) (100) (100) ASTM F 26,
DIN 50433
1.3 Conductivity Type n or p n or p n or p ASTM F 42,
JIS H607
DIN 50432
SEMI M24-1103 © SEMI 1994, 2003 11
CLASSIFICATION ITEMS (SEMI M18) Particle Counting
Furnace &
Thermal Process
Lithography &
Patterning
Test Method
1.4 Dopant P or B P or B P or B ASTM F 1389,
F 1630, DIN 50438/3
1.5 Nominal Edge Exclusion (See Note 1.)
(Fixed Quality Area)
300 mm
200 mm
2 mm
3 mm
2 mm
3 mm
2 mm
3 mm
2. ELECTRICAL CHARACTERISTICS
2.1 Resistivity, Center Point NS
≥ 1 Ω-cm
ASTM F 84, F 673,
JIS H 602,
DIN 50431, 50445
2.2 Radial Resistivity Variation NS NS ASTM F 81,
DIN 50435
2.4 Minority Carrier Lifetime
(Carrier Recombination Lifetime)
NS
≥ 325 µs
NS
JEIDA 53, ASTM F
1535
3. CHEMICAL CHARACTERISTICS
3.1 Oxygen Concentration NS
≤ 1.2 × 10
18
/cm
3
NS ASTM F 1188,
F 1619
DIN 50438/1, JEIDA
61
3.1.1 Oxygen Concentration Tolerance:
Tolerance around Center Point
≤ 10%
3.2 Radial Oxygen Variation NS
3.3 Carbon Concentration ≤ 0.2 ppma ASTM F 1391,
DIN 50438/2, JEIDA
56
3. Total Bulk Iron Concentration
≤ 5 × 10
10
/cm
3
ASTM F 978
4. STRUCTURAL CHARACTERISTICS (See Note 8.)
4.1 Dislocation Etch Pit Density ≤ 500/cm
2
ASTM F 1725,
JIS H 609,
DIN 50434, 50443/1
4.2 Slip None ASTM F 1725
JIS H 609, DIN
50434, 50443/1
4.3 Lineage None ASTM F 1725,
JIS H 609, DIN
50434, 50443/1
4.4 Twin None ASTM F 1725,
JIS H 609, DIN
50434, 50443/1
4.5 Swirl None ASTM F 1726,
JIS H 614,
DIN 50443/1
4.6 S-pits None ASTM F 1726,
F 1049
4.7 Oxidation Induced Stacking Faults (OSF) User/Vendor ASTM F 1726,
User/Vendor mutual
agreement
4.8 Oxide Precipitates (BMD)
Interstitial Oxygen Reduction (∆ Oi)
NS
User/Vendor
NS
ASTM F 1239,
User/Vendor mutual
agreement
5.WAFER PREPARATION CHARACTERISTICS
SEMI M24-1103 © SEMI 1994, 2003 12
CLASSIFICATION ITEMS (SEMI M18) Particle Counting
Furnace &
Thermal Process
Lithography &
Patterning
Test Method
5.1 Wafer ID Marking (See Note 2.) Optional Optional Optional
5.3 Denuded Zone NS NS NS
5.4 Extrinsic Gettering Treatment None None None
5.5 Backseal NS None NS
5.6 Annealing NS Donor Annih.
Only
NS
6. MECHANICAL CHARACTERISTCS
6.1 Diameter 200 and 300 mm 200 and 300 mm 200 and 300 mm ASTM F 613,
DIN 50441/4,
JEIDA27
6.2 Primary Flat Length/Diameter
Notch Dimensions
SEMI M1 SEMI M1 SEMI M1 ASTM F 671,
F 1152, DIN 50441/4
JEIDA 27,
6.3 Primary Flat/
Notch Orientation
ASTM F 847
6.4 Secondary Flat Length ASTM F 671,
DIN 50441/4
6.5 Secondary Flat Location
ASTM F 847
6.6 Edge Profile SEMI M1 SEMI M1 SEMI M1 ASTM F 928,
DIN 50441/2
6.- Edge Surface Finish Polished Polished Polished
6.7 Thickness, Center Point SEMI M1 SEMI M1 SEMI M1 ASTM F 533,
JIS H 611,
DIN 50441/1
6.8 Total Thickness Variation, GBIR
≤ 5µm ≤ 5 µm ≤ 3 µm
ASTM F 533, F 657,
JIS H 611,
DIN 50441/1
6.9 Surface Orientation
0 ± 1.0° 0 ± 1.0° 0 ± 1.0°
ASTM F 26, JEIDA
18, DIN 50433
6.11, 12 Warp, Sori
300 mm
200 mm
NS
NS
NS
NS
≤ 100 µm
≤ 75 µm
ASTM F 657,
F 1390, F 1451
6.13 Flatness/Global, GFLR NS ASTM F 1530,
JEIDA 43
6.14 Flatness/Site, SFSR
(25 × 32 mm, PUA 90%)
NS NS
≤ 130 nm
7. FRONT SURFACE CHEMISTRY
7.1 Surface Metal Concentration (atoms/cm
2
)
Sodium
Aluminum
Chromium
Iron
Nickel
Copper
Zinc
Calcium
(See Note 4.)
≤ 1.8 × 10
10
/cm
2
≤ 1.0 × 10
11
/cm
2
≤ 1.8 × 10
10
/cm
2
≤ 1.8 × 10
10
/cm
2
≤ 1.8 × 10
10
/cm
2
≤ 1.8 × 10
10
/cm
2
≤ 1.0 × 10
11
/cm
2
≤ 1.8 × 10
10
/cm
2
(See Note 3.)
≤0.88 × 10
10
/cm
2
≤ 1.0 × 10
11
/cm
2
≤ 0.88× 10
10
/cm
2
≤ 0.88 × 10
10
/cm
2
≤ 0.88 × 10
10
/cm
2
≤ 0.88 × 10
10
/cm
2
≤ 1.0 × 10
11
/cm
2
≤ 0.88 × 10
10
/cm
2
(See Note 4.)
≤ 1.8 × 10
10
/cm
2
≤ 1.0 × 10
11
/cm
2
≤ 1.8 × 10
10
/cm
2
≤ 1.8 × 10
10
/cm
2
≤ 1.8 × 10
10
/cm
2
≤ 1.8 × 10
10
/cm
2
≤ 1.0 × 10
11
/cm
2
≤ 1.8 × 10
10
/cm
2
User/Vendor
Mutual Agreement,
ASTM F 1526,
ASTM F 1617
8. FRONT SURFACE INSPECTION CHARACTERISTICS