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SEMI G78-0699 © SE MI 1999 4 is to be entered into the d ata collection tab le as pa rt of the application of this met hod. 6.2.4 The alg orithm collects data fro m 9 wafers out of a lot of 10. Three set ups are perform …

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SEMI G78-0699 © SEMI 19993
5.17 scrub mark mark left by the probe in the
bonding pad or bump after the probe card has touched
down on the wafer.
5.18 temperature testing — testing of devices at a
controlled temperature level other than ambient.
5.19 test — one complete run-throu gh of the data
collection portion of this document on one automated
wafer prober.
5.20 tester — specialized computer controlled system
designed to test integrated circuits.
5.21 prober communications protocol (see Section
9.6) — means of transmitting data between the tester
and the prober. Common methods are:
TTL
RS-232c
GPIB
5.22 test head — package of electronics (part of the
Tester) which interacts both electrically and
mechanically with the probe card, typically through the
Prober Tester Interface (PTI).
5.23 throughput — rate at which die can be cycled, by
the automatic wafer prober, for the purpose of being
tested. It is inherent in the functionality of an automatic
wafer prober (or any other motorized positioning
device) that accuracy, repeatability and throughput are
intimately and inseparably related.
5.24 touch down — contact between the probe card
and the wafer. This user may choose to define this as
either first electrical or first mechanical contact.
5.25 wafer — semiconductor substrate upon which
multiple die are fabricated.
5.26 wafer boat or wafer cassette — carrier for
multiple wafers.
5.27 wafer chuck platform withi n an automatic
wafer prober that supports and transports the wafer.
The chuck may contain the means for controlled
temperature testing.
5.28 x, y, z and
θ
— motions relativ e to the center of
the Probe Card when standing in front of the Prober:
Motion to the right is motion in the positive X-
direction.
Motion towards the back of the prober is motion in
the positive Y-direction.
Motion away from the floor is the positive Z-
direction.
Motion revolving around a Z-axis passing through
the center of the probe card is θ-motion. Motion in
the counter-clockwise direction when facing down
from above the prober is motion in the positive θ-
direction.
5.29 z-clearance — distance between the user defined
initial contact point and the top surface of the wafer
during that portion of the wafer prober’s cycle when the
wafer chuck is moving the wafer between DUTs.
6 Summary of Method
6.1 Objective A SEMI Probe Sta ndards Task Force
has defined this method. That task force consisted of
members from semiconductor wafer probe system users
and wafer probe system suppliers. This method, in part
a guide to collection of data, is aimed at a specific set of
wafer probe system parameters: accuracy, repeatability
and throughput. This method is a tool that creates
comparative data. That data will act as a criterion by
which multiple wafer probe systems can be judged
competitively.
6.2 Probe System Accuracy and Throughput A wafer
probe system will have needle placement error due to
the probe system electromechanical systems, and
additional needle placement error due to the probe card
physical alignment of the needles. The degree of
accuracy to which the probe system can place the
chuck, the effectiveness of the probe system's bond pad
to needle alignment, the physical alignment of the
probe card needles in their X and Y plane, and the
probe system's vision resolution and accuracy (x
microns of distance per pixel) will be the factors that
influence a probe system's overall placement
performance.
6.2.1 Probe system comparative acc uracy and
repeatability are established in this method using probe
mark data acquired manually with a vision system or, if
available, through use of an automated probe mark data
analysis system. Acquired data is analyzed with the
Probe Mark Data Analysis algorithm contained in this
method.
6.2.1.1 The intention of this data colle ction exercise is
not to make a deterministic conclusion establishing a
probe system’s accuracy. Data analysis results are only
meaningful in the context of a comparative analysis of
multiple probe systems.
6.2.2 Probe system throughput is be st determined
using time measurements made using a stopwatch.
Other approaches can be applied, such as:
the time stamp and log file (if available) on the
probe system under evaluation.
time tracking within the device test program
employed for testing the prober.
6.2.3 Any of these approaches is via ble for measuring
time intervals during probe system operation. That data
SEMI G78-0699 © SEMI 1999 4
is to be entered into the data collection table as part of
the application of this method.
6.2.4 The algorithm collects data from 9 wafers out of
a lot of 10. Three setups are performed using 3 wafers
per setup. All dice will be probed, but data will be taken
only on twelve of the die on each wafer. Twenty-four
pads on each die are evaluated (see Figure 4). Overall,
2592 die pads are analyzed in a lot.
6.2.5 When all the data is collected and analyzed, each
probe system will have an average die offset value.
This will be a comparative representation of accuracy
consisting of average offsets for all evaluated die. This
comparative representation of accuracy is a measure of
how accurate the probe systems place the chuck, and
thus the probe needles, to the center point on the die
pads, consistent with normal operation of the probe
systems.
6.2.6 In general, when the probe marks are viewed
across all dice, there will be a data spread, or
distribution of error points for each wafer.
Repeatability is the ± 3σ variation of all die offsets,
identified in this method as the 3σ calculation of
Normalized Die Offset.
6.3 Probe Card Issues – Probe card construction
variability and probe card usage at temperatures other
than ambient are important considerations. The
following sources of error should be kept in mind:
In a hot chuck environment the probe card and
needles will experience a high percentage of the
elevated chuck temperature. The material selection
for the probe card will determine how it expands
and contracts due to the temperatures applied.
Probe systems can be equipped with programmable
preheat (soak) times. Longer preheat times will
reduce probe card variability while decreasing
throughput.
Needle construction can result in excessive error
due to bending of the needles when excessive
probe system z-stage overdrive is applied. The
number of needles and the selection of needle
technology, i.e., cantilever versus vertical, is
another variable, having a noticeable influence on
measurement results.
Since each user of this method is not confined to a
standard for probe card construction, the user of
this method is advised to choose a probe card and
vendor with good integrity, and to use that same
probe card when evaluating multiple probe
systems. The assertion here is that the same probe
card used to evaluate multiple systems will react in
a repeatable manner under varying environmental
conditions. This assumes there is no excessive
probe card needle wear during the multiple
evaluations, and that needle alignment is verified
or achieved before each execution of the
procedure.
6.3.1 Probe mark scrub length can vary due to several
factors including:
variations in the flatness of the chuck and
stage travel that are not compensated by the z-
sensor mapping algorithms
by hard spots in the aluminum pads, or
by variations in probe tip geometry, etc.
6.3.2 To minimize the impact of this variation in the
probe mark analysis algorithm, use only scrub mark
location data that is taken normal to the direction of
scrub. Distances measured normal to the orientation of
the scrub mark are generally accepted to be
significantly more stable than that which is taken
parallel to the scrub mark (see Figure 2).
6.3.3 In summary, the probe card itself can be a
limiting factor when making needle placement accuracy
measurements, especially at varying environmental
conditions. Material selection, vendor to vendor
variation, construction of a probe card (blade, epoxy
ring, vertical, etc.), especially with varying
environmental conditions, will create inconsistent
analysis results, unless care is taken with the
application of this method. The precautions discussed
here are meant to promote consistent and accurate
evaluation results for this method.
6.3.4 Nevertheless, the precautions mentioned here
could ALSO be an important basis for using this
method. As an example, a probe card is typically
designed for XY positional placement and planarity,
and is expected to meet customer specification
requirements in normal operation at room temperatures.
This method could serve as a means of establishing
numerical results that represents the effects that
temperature or probe card construction variability have
on probe card specification requirements.
6.4 The PMA Algorithm – A best-f it rectangle can be
drawn around the scrub mark and the passivation
opening for each pad, reference Figure 3.
NOTE: Applying a best-fit rectangle around the passivation
opening may prove difficult for certain vision systems.
Application of the best-fit rectangle around the die pad metal
is an acceptable alternative. The center position of the best-fit
rectangle around the scrub mark will represent the center of
the scrub mark. The center of the die pad is the center of the
best—fit rectangle around the passivation opening. The
distance between the two centers is the pad offset. Pad offset
is computed from the four values left, right, top, and bottom,
reference Figure 2.
SEMI G78-0699 © SEMI 19995
X offset =
(right – left)/2 + left
Die pad
Cente
r
Lef
t
X
Y
Y Pads- Scrub mark &
scrub mark cente
r
X
Die pad
Cente
r
Top
Bottom
Y
X Pads- Scrub mark &
scrub mark cente
r
Y offset =
(top – bottom)/2 + bottom
Right
Offset
Offset
Figure 2
X and Y Offset
Scrub mark
and scrub mark
center
Die pad
Passivation opening and best fit
rectangle
Best fit
rectangle
Die pad center
Y
X
Figure 3
Scrub Mark Analysis
6.4.1 Vision system measurements will be made
establishing offset distances from the die pad center to
the scrub mark. The stability of the measurement is
greater when made perpendicular to the direction of the
scrub mark. This will establish X and Y offsets via
measurement of offsets for pads in the X and Y plane of
the die.
6.4.2 Once the offsets are established, a two-step
procedure will manipulate 1296 X and 1296 Y offset
values. The end result of the algorithm will be a
relative measure of the total probe system accuracy and
repeatability for the pads analyzed. Figure 5 represents
a visual summary of the method.
6.5 Considerations of Scale — When evaluating the
suitability of a particular probe system to probe a
particular size of bond pad, or to probe accurately at a
particular pad-to-pad pitch, a good rule of thumb is that
the prober’s positional accuracy, as stated in its
specifications, should be 1/10 that of the scale of the
features to be probed. For example, if the probe system
being evaluated has an overall placement accuracy of
5µm, it would be inappropriate to analyze wafers using
this method and this probe system for dice that have
pads less than 50 µm square (this would be less than
10x).
6.5.1 Regardless, when this method is used for
evaluation of multiple systems, it is essential that die
and bond pad size/pitch consistency be maintained from
evaluation to evaluation if the results are to be
meaningful.
6.5.2 The same 10× rule applies to the vision system
or automated Probe Mark Analysis system employed to
make the pad offset measurements. These systems
should have a pixel resolution that is at least 10× finer
than the die pad dimensions associated with the scrub
marks being measured.
6.6 Conclusion — It is assumed th at the user of this
method has a wafer probe system or systems, or is
planning to make a selection from the various systems
available in the market place, and requires objective
comparative analysis for accuracy, repeatability and
throughput.
6.6.1 It should be clear that this method employs a
three-step process of probing, probe mark data
collection, and data analysis.
6.6.2 When probing, every die on ea ch of the ten
wafers is to be “tested” and probed. Of those ten
wafers, the last nine with 12 die per wafer will be used
for scrub mark data collection. At least 24 pads per die
will be used for the analysis. The first wafer is meant
only to allow stabilization for the probe system and its
probe card.