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SEMI M8-0703 © SEMI 1984, 2003 9 Item Specification CLASSIFICATION MECHANICAL PROCESS 9.0 Back Surface Ch aracteristics 9.1 Edge Chips Unspecified None 9.6 Roughness Unspecified 9.7 Brightness (gloss) 150 mm/200 mm Unspe…

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SEMI M8-0703 © SEMI 1984, 2003 8
Item Specification
CLASSIFICATION
MECHANICAL PROCESS
200 mm (notch depth) SEMI M1.9
200 mm (flat diameter) SEMI M1.10
300 mm (notch depth) SEMI M1.15
6.3 Primary Flat/Notch Orientation SEMI M1
6.4 Secondary Flat Length SEMI M1.8 or SEMI M1.13 (150 mm) or SEMI M1.10 (200 mm)
Secondary Flat Length (300 mm) None
6.5 Secondary Flat Location SEMI M1
6.6 Edge Profile 5.2 of SEMI M1
6.7 Thickness
150 mm (SEMI M1) SEMI M1.8 or SEMI M 1.13
200 mm (notched or flatted) SEMI M1.9 or SEMI M1.10
300 mm SEMI M1.15
6.8 Thickness Variation (TTV) Unspecified
6.9 Surface Orientation
(for all diameters up to 200 mm)
Unspecified
Surface Orientation (for 300 mm) Unspecified
6.10 Bow Unspecified
6.11 Warp Unspecified
6.12 Sori Unspecified
6.13 Flatness/Global Unspecified
6.14 Flatness/Site Unspecified
7.0
Front Surface Chemistry
7.1 Surface Metal Concentration Unspecified See Note 1.
8.0
Front Surface Visual
Characteristics
8.1A Scratches (macro) – total length Unspecified None
8.1B Scratches (micro) – total length Unspecified
≤ 0.10 × Diameter
8.2 Pits Unspecified None
8.3 Haze Unspecified None
8.4 Localized Light Scatterers
Unspecified See Note 2.
150 mm Unspecified
≤ 0.20/cm
2
@ ≥ 0.20 µm
200 mm Unspecified
≤ 0.20/cm
2
@ ≥ 0.20 µm
300 mm Unspecified
≤ 0.20/cm
2
@ ≥ 0.20 µm
8.5 Contamination/area Unspecified None
8.6 Edge Chips Unspecified None
8.7 Edge Cracks Unspecified None
8.8 Cracks, Crow’s feet Unspecified None
8.9 Craters Unspecified None
8.10 Dimples Unspecified None
8.11 Grooves Unspecified None
8.12 Mounds Unspecified None
8.13 Orange Peel Unspecified None
8.14 Saw Marks Unspecified None
SEMI M8-0703 © SEMI 1984, 2003 9
Item Specification
CLASSIFICATION
MECHANICAL PROCESS
9.0
Back Surface Characteristics
9.1 Edge Chips Unspecified None
9.6 Roughness Unspecified
9.7 Brightness (gloss)
150 mm/200 mm Unspecified
300 mm
≥ 80%
9.8 Localized Light Scatterers (LLS’s) Unspecified
9.9 Scratches (macro) Unspecified < 0.25 × Diameter
9.10 Scratches (micro) Unspecified
10.0
Other Characteristics
TBD
(See Note 3.)
150 mm/200 mm Unspecified
TBD
(See Note 3.)
300 mm Unspecified Polished
NOTE 1: Test wafers are cleaned according to a defined prime wafer supplier process, with a stated capability for surface metals. Test wafer
characteristics are defined to be the “unsorted” process capability for these parameters and accordingly, will not be sorted. Products needed
special surface metal requirements should be described by SEMI M24 criteria.
NOTE 2: Test wafers are cleaned according to a defined prime wafer supplier process, with a stated capability for removable LLS. Test wafer
characteristics are defined to be the “unsorted” process capability for these parameters and accordingly, will not be sorted. Products needing
special LLS requirements should be described by SEMI M24 criteria.
NOTE 3: A revision to SEMI M18 to provide this item number is being developed. When this revision is completed, this specification will be
revised to include the assigned item number from SEMI M18.
SEMI M8-0703 © SEMI 1984, 2003 10
Table 5 Guide for Specifying 200 mm & 300 mm Polished Silicon Process Test Wafers for Advanced
Applications
Item Process Test Wafers
0.18 µm or 0.13 µm Design Rule
1.0
GENERAL CHARACTERISTICS
1.1 Growth Method CZ or MCZ
1.2 Crystal Orientation <100>
1.3 Conductivity Type P
1.4 Dopant Boron
1.5 Nominal Edge Exclusion 3 mm
2.0
ELECTRICAL CHARACTERISTICS
2.1 Resistivity
0.5– 50.0 Ω·cm
2.2 Radial Resistivity Variation Unspecified
2.3 Resistivity Striations Unspecified
2.4 Minority Carrier Recombination Lifetime Unspecified
3.0
CHEMICAL CHARACTERISTICS
3.1.1 Oxygen Concentration Unspecified
3.2 Radial Oxygen Variation Unspecified
3.3 Carbon Concentration Unspecified
4.0
STRUCTURAL CHARACTERISTICS
4.1 Dislocation Etch Pit Density Unspecified
4.2 Slip None
4.3 Lineage None
4.4 Twins None
4.5 Swirl Unspecified
4.6 Shallow pits Unspecified
4.7 Oxidation-Induced Stacking Faults (OSF) Unspecified
4.8 Oxide Precipitates Unspecified
5.0
WAFER PREPARATION
CHARACTERISTICS
5.1 Wafer ID Marking
200 mm
300 mm
User Specified
SEMI M1.15
5.2 Front Surface Thin Films None
5.3 Denuded Zone None
5.4 Extrinsic Gettering None
5.5 Backseal None
6.0
MECHANICAL CHARACTERISTICS
6.1 Diameter SEMI M1
6.2 Primary Fiducial Location SEMI M1
6.3 Primary Fiducial Dimension SEMI M1
6.6 Edge Profile SEMI M1