semi合集-English.pdf - 第5046页

SEMI M18-0704 © SEMI 1990, 2004 32 Line Item EDI Code ID Sub Param ID 13.14 Localized Light Scatterers (LLS) 4 100192 ≥ 0.03 µ 13.14 Localized Light Scatterers (LLS) 4 100193 ≥ 0.02 µ 13.15 Surface Edge Exclusion 100194 …

SEMI M18-0704 © SEMI 1990, 2004 31

Line Item EDI Code ID Sub Param ID

13.10 Edge Chips 100145

13.11 Edge Crown 100146

13.12 Haze 100147

13.13 Foreign Matter 100148

14.1 Contamination 100149

16.1 Mask ID 100150

16.2 Alignment Precision 100151

16.3 Pattern Line Width Tolerance 100152

17.1 Dopant 100153

17.2 Diffusion Depth (xj) 100154

17.3 Sheet Resistance 100155

17.4 Pattern Step Height 100156

17.5 Defect Density (Before Epi) 100157

18.1 Pattern Shift Ratio 100158

18.2 Pattern Distortion Ratio 100159

6.14 Flatness/Site 100160 SFSR

12.5 Flatness/Site 100161 SFSR

4.9

Interstitial Oxygen Reduction (∆Oi)

100162

6.15 Fixed Quality Area 100164

10.1 Bulk defects by X-ray topography 100169

12.6 Fixed Quality Area 100172

9.8 Scratches – macro 100165

9.9 Scratches – micro 100166

9.10 Localized Light Scatterers (LLS)

4

100167

9.10 Localized Light Scatterers (LLS)

4

100168

11.01 [ ] Specified According to SEMI M11 Table [ ] 100170

12.01 [ ] Specified According to SEMI M11 Table [ ] 100171

13.14 Localized Light Scatterers (LLS)

4

100173 ≥ 0.50µ

13.14 Localized Light Scatterers (LLS)

4

100174 ≥ 0.30µ

13.14 Localized Light Scatterers (LLS)

4

100175 ≥ 0.20µ

13.14 Localized Light Scatterers (LLS)

4

100176 ≥ 0.19µ

13.14 Localized Light Scatterers (LLS)

4

100177 ≥ 0.18µ

13.14 Localized Light Scatterers (LLS)

4

100178 ≥ 0.17µ

13.14 Localized Light Scatterers (LLS)

4

100179 ≥ 0.16µ

13.14 Localized Light Scatterers (LLS)

4

100180 ≥ 0.15µ

13.14 Localized Light Scatterers (LLS)

4

100181 ≥ 0.14µ

13.14 Localized Light Scatterers (LLS)

4

100182 ≥ 0.13µ

13.14 Localized Light Scatterers (LLS)

4

100183 ≥ 0.12µ

13.14 Localized Light Scatterers (LLS)

4

100184 ≥ 0.11µ

13.14 Localized Light Scatterers (LLS)

4

100185 ≥ 0.10µ

13.14 Localized Light Scatterers (LLS)

4

100186 ≥ 0.09µ

13.14 Localized Light Scatterers (LLS)

4

100187 ≥ 0.08µ

13.14 Localized Light Scatterers (LLS)

4

100188 ≥ 0.07µ

13.14 Localized Light Scatterers (LLS)

4

100189 ≥ 0.06µ

13.14 Localized Light Scatterers (LLS)

4

100190 ≥ 0.05µ

13.14 Localized Light Scatterers (LLS)

4

100191 ≥ 0.04µ

SEMI M18-0704 © SEMI 1990, 2004 32

Line Item EDI Code ID Sub Param ID

13.14 Localized Light Scatterers (LLS)

4

100192 ≥ 0.03µ

13.14 Localized Light Scatterers (LLS)

4

100193 ≥ 0.02µ

13.15 Surface Edge Exclusion 100194

14.01 [ ] Specified According to SEMI M11 Table [ ] 100195

14.2 Scratches -- macro 100196

14.3 Scratches -- micro 100197

14.4 Localized Light Scatterers 100198

100199

20.1 Annealing Atmosphere 100200

20.2 Other Dopant in Crystal 100201

21.1 Bow 100202

21.2 Warp 100203 SEMI MF657

21.2 Warp 100204 SEMI MF1390

21.3 Sori 100205

21.4 Flatness/Global 100206

21.5 Flatness/Site 100207 SF3R

21.5 Flatnes/Site 100208 SF3D

21.5 Flatness/Site 100209 SFLR

21.5 Flatness/Site 100210 SFLD

21.5 Flatness/Site 100211 SFQR

21.5 Flatness/Site 100212 SFQD

21.5 Flatness/Site 100213 SBIR

21.5 Flatness/Site 100214 SFSR

21.6 Fixed Quality Area 100215

22.1 Stacking Faults 100216

22.2 Slip 100217

23.1 Contamination 100218

24.1 Depth of BMD Denuded Zone 100219

24.2 BMD Density 100220

6.14 Flatness/Site 100221 SFSD

12.5 Flatness/Site 100222 SFSD

12.5 Flatness/Site 100223 SBID

21.5 Flatness/Site 100224 SFSD

21.5 Flatness/Site 100225 SBID

25.0 Type of SOI 100226

25.1 Starting silicon wafer for SOI 100227

25.2 Surface Silicon Thickness 100228

25.3 Surface Silicon Thickness Mean Value Variation 100229

25.4 Surface Silicon Thickness Variation in Wafer 100230

25.5 Crystal Orientation 100231

25.6 Rotation Misalignment 100232

25.7 Edge Exclusion, Nominal 100233

25.8 Non-SOI Edge Area 100234

25.9 Conductivity Type 100235

25.10 Dopant 100236

25.11 Dopant Concentration 100237

SEMI M18-0704 © SEMI 1990, 2004 33

Line Item EDI Code ID Sub Param ID

25.12 SOI Etch Pit 100238

25.13 Threading Dislocation 100239

25.14 HF Defect 100240

25.15 Void 100241

25.16 Roughness (Si surface)

rms @ 2 × 2µm

100242

Roughness (Si surface)

rms @ 10 × 10µm

100243

Roughness (Si surface)

rms @ [ ] × [ ]µm

100244

Roughness (Si surface)

rms @ [ ] × [ ]µm

100245

25.17 Surface Metal Contamination (Fe) 100246

Surface Metal Contamination (Cr) 100247

Surface Metal Contamination (Ni) 100248

Surface Metal Contamination (Cu) 100249

Surface Metal Contamination [ ] 100250

Surface Metal Contamination [ ] 100251

Surface Metal Contamination [ ] 100252

Surface Metal Contamination [ ] 100253

Surface Metal Contamination [ ] 100254

Surface Metal Contamination [ ] 100255

26.1 BOX Thickness 100256

26.2 BOX Thickness Variation 100267

26.3 Bonded Interface Location 100258

26.4 BOX Pinholes 100259

26.5 Dielectric Breakdown 100260

27.1 Warp 100261

27.2 Flatness-site 100262

28.1 Scratch 100263

28.2 Haze 100264

28.3 LLS

@particle size

100265

100266

28.4 Slip 100267

28.5 Edge Chip 100268

28.6 Edge Crack 100269

28.7 Foreign Matter 100270

29.1 Backside Metal Contamination (Fe) 100271

Backside Metal Contamination (Cr) 100272

Backside Metal Contamination (Ni) 100273

Backside Metal Contamination (Cu) 100274

Backside Metal Contamination [ ] 100275

Backside Metal Contamination [ ] 100276

Backside Metal Contamination [ ] 100277

Backside Metal Contamination [ ] 100278

Backside Metal Contamination [ ] 100279

Backside Metal Contamination [ ] 100280