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SEMI M9.3-89 © SEMI 1984, 1996 1 SEMI M9 .3-89 STANDARD FOR ROUND 2 inch DIA M ETER POLISHED MONOCRYSTA LLINE G A LLIUM A RSENIDE SLICES FOR OPTOELEC TRIC A PPLICAT IONS The complete specification for this product includ…

SEMI M9.2-96 © SEMI 1984, 19961

SEMI M9.2-96

STANDARD FOR ROUND 76.2 mm POLISHED MONOCRYSTALLINE

GALLIUM ARSENIDE WAFERS FOR ELECTRONIC DEVICE

APPLICATIONS

NOTE: This entire document was revised in 1995.

The complete specification for this product includes all general requirements of SEMI M9.

Table 1 Dimension and Tolerance Requirements

Property Dimension Tolerance Units

DIAMETER

76.2 ± 0.5 mm

THICKNESS, CENTER POINT 625 ± 25 µm

PRIMARY FLAT LENGTH 22 ± 2 mm

SECONDARY FLAT LENGTH 11 ± 2 mm

The diameter standard means that the dimension is centered to this value.

Table 2 Orientation and Flat Location Requirements

Property Requirement

PRIMARY FLAT ORIENTATION

(

)101( ) ± 0.5°

, under an Arsenic facet. The primary flat shall

be perpendicular to the “V” etch figure.

SECONDARY FLAT ORIENTATION 90° ± 5° counterclockwise from the primary flat.

SURFACE ORIENTATION

(100) ± 0.5°

A. (See Figure 1 in SEMI M9.)

B. (100) off 2° ± 0.5° toward the (110) plane which is between the

primary and secondary flats (see Figure 3 in SEMI M9.)

ORTHOGONAL MISORIENTATION ± 5° (See Figure 5 in SEMI M9.)

See Table 1 in SEMI M9.

Using A-B, bromine-methanol, ammonium hydroxide: hydrogen peroxide etch. See Figures 1 and 3 in SEMI M9. Figure 1 also shows the

orientation of the V-groove figures relative to KOH etch pits.

The frame of reference is the (100) plane of the crystal. It is the wafer normal that is tilted toward the (110) plane of the crystal.

NOTICE: These standards do not purport to address safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish appropriate safety and health practices and determine the

applicability of regulatory limitations prior to use. SEMI makes no warranties or representations as to the suitability

of the standards set forth herein for any particular application. The determination of the suitability of the standard is

solely the responsibility of the user. Users are cautioned to refer to manufacturer’s instructions, product labels,

product data sheets, and other relevant literature respecting any materials mentioned herein. These standards are

subject to change without notice.

The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted

material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position

respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this

standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and

the risk of infringement of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI M9.3-89 © SEMI 1984, 19961

SEMI M9.3-89

STANDARD FOR ROUND 2 inch DIAMETER POLISHED

MONOCRYSTALLINE GALLIUM ARSENIDE SLICES FOR

OPTOELECTRIC APPLICATIONS

The complete specification for this product includes all general requirements of SEMI M9.

Table 1 Dimension and Tolerance Requirements

Property Min Max Units

DIAMETER 50.42 51.18 mm

1.985 2.015 in.

THICKNESS, CENTER POINT 350 400 mm

0.0138 0.0158 in.

PRIMARY FLAT LENGTH 14.23 17.52 mm

0.560 0.690 in.

SECONDARY FLAT LENGTH 6.35 9.65 mm

0.250 0.380 In.

BOW 20 µm

0.0008 in.

A. 50 µm

0.0019 in.

B. 30 µm

0.0011 in.

C. 10 µm

0.0039 in.

TOTAL THICKNESS VARIATION SCHEDULE

A. 24 µm

0.0009 in.

B. 12 µm

0.0005 in.

C. 8µm

0.0003 in.

D. 4µm

0.0002 in.

For referee purposes, metric (SI) units apply.

SEMI M9.3-89 © SEMI 1984, 1996 2

Table 2 Orientation and Flat-Location Requirements

Property Requirement

Option V-Groove (See Figures 1 and 3.) Dove-Tail (See Figures 2 and 4.)

PRIMARY FLAT ORIENTATION (011) ± 0.5°

, under an Arsenic facet.

The primary flat shall be perpendicular to

the “V” etch figure.

(011) ± 0.5°

, under a Gallium facet. The

primary flat shall be perpendicular to the

“Dove-tail” etch figure.

SECONDARY FLAT LOCATION 90° ± 5° counterclockwise from the

primary flat.

90° ± 5° clockwise from the primary flat.

SURFACE ORIENTATION

A. (100) ± 0.5° (See Figure 1.) (100) ± 0.5° (See Figure 2.)

B. (100) off 2° ± 0.5° towards the (110)

plane which is between the primary and

secondary flats (See Figure 3).

(100) off 2° ± 0.5° towards any (110)

plane (See Figure 4).

ORTHOGONAL MISORIENTATION ± 5° (See Figure 5.) ± 5° (See Figure 5.)

The frame of reference is the (100) plane of the crystal. It is the wafer normal that is tilted towards the (110) plane of the crystal.

See Table 1.

Using A-B, bromine-methanol, ammonium hydroxide: hydrogen peroxide etch. See Figures 1 through 4. Figures 1 and 2 also show the

orientation of the V-groove and Dove-tail figures relative to KOH etch pits.