semi合集-English.pdf - 第5854页

SEMI P33-0998 © SEMI 1998 8 RELATED INFORM A TI ON 1 TERMS A ND DEFINITI ONS NOTE: T his related inf or ma tion is not a n off icial pa rt of SEMI P33. The foll owing terms and definitions are provide d for inform ation …

SEMI P33-0998 © SEMI 19987

APPENDIX 1

HARD SURFACE PHOTOMASK MATERIAL PROPERTIES

NOTE: This appendix was approved as an official part of SEMI P33 by full letter-ballot procedure.

Table A1-1 Material Properties

Property

Ultra Low Thermal Expansion (ULTE)

Modulus of Elasticity 6.7–7.4 × 10

kg/mm

Poisson’s Ratio 0.16–0.19

Specific Gravity 2.18–2.20 g/cm

NOTICE: These standards do not purport to address

safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

SEMI makes no warranties or representations as to the

suitability of the standards set forth herein for any

particular application. The determination of the

suitability of the standard is solely the responsibility of

the user. Users are cautioned to refer to manufacturer’s

instructions, product labels, product data sheets, and

other relevant literature respecting any materials

mentioned herein. These standards are subject to

change without notice.

The user’s attention is called to the possibility that

compliance with this standard may require use of

copyrighted material or of an invention covered by

patent rights. By publication of this standard, SEMI

takes no position respecting the validity of any patent

rights or copyrights asserted in connection with any

item mentioned in this standard. Users of this standard

are expressly advised that determination of any such

patent rights or copyrights, and the risk of infringement

of such rights, are entirely their own responsibility.

SEMI P33-0998 © SEMI 1998 8

RELATED INFORMATION 1

TERMS AND DEFINITIONS

NOTE: This related information is not an official part of SEMI P33. The following terms and definitions are provided for

information only. The Microlithography-related definitions identified herein were compiled from the Terminology sections of the

Standards in the SEMI Microlithography Volume. The SEMI Microlithography Committee is currently updating all terminology

through the Microlithography Terms and Definitions Task Force, and will eventually include the updated terminology in the

SEMI Compilation of Terms.

SEMI makes no warranties or representations as to the

suitability of the terms and definitions set forth herein

for any particular application. The determination of the

suitability of the terms and definitions is solely the

responsibility of the user.

array rotation — the total array set rotated relative to

substrate edges.

cavity — in pellicle technology, an unfilled space

between the photomask and the optically transparent

film within the mounted pellicle frame area.

coherence, spatial — the correlation of the

electromagnetic fields at different points in space. Can

be achieved with a non-monochromatic source.

coherence, temporal — the correlation of

electromagnetic fields at different points in time but the

same point in space (related to the non-

monochromaticity of the source).

composite drawing — a large-scale drawing comprising

all geometric forms required for a single device,

arranged in proper relative positions. It is used as a

guide for manual cutting by Rubylith, or for a digitizing

guide for Computer Aided Design (see CAD). The set

of colored overlay films made as work progresses to the

reticle stage, can also be considered a composite,

suitable for checking design errors. (SYN: Master

Drawing, Engineering Drawing, Design Drawing.)

contact mask — in semiconductor fabrication, after the

major diffusions, gates, and other active areas have

been deposited, a glass insulating layer is placed over

the whole die. Small holes are etched through this glass

at points where the interconnecting metal conducts

must ‘contact’ the active areas. The mask that defines

these holes is characterized by many small squares

(~0.2–0.4 mil) scattered throughout the die area.

contact printing — a process of reproducing an original

by placing a photomask so that the coated side is in

contact with the photoresist (or emulsion) surface of the

area to be printed and then exposing the photoresist (or

emulsion).

cure, photoresist — the process of eliminating

undesirable properties of photoresists, such as

tackiness, softness, the tendency to flow, lack of

adhesion, etc.

dark area — an opaque area.

defect, gross photomask — a photomask defect that can

be easily seen with the naked eye or under

magnification no greater than 10×. Examples: large

scratches, cracks in the glass substrate, drying marks,

etc.

defect, photomask — any flaw or imperfection in the

opaque coating or functional pattern of a photomask

that will reproduce itself in a photoresist film to such a

degree that it is pernicious to the proper functioning of

the microelectronic device being fabricated.

degradation — reductions in image quality (measured

as resolution, edge acuity, dimensional shifts, defect

density, etc.) experienced in each generation of

reproduction, as compared to the original or preceding

generation. Generally, degradation increases with each

generation, in a predictable manner.

diffraction pattern, spatial — intensity variations of

light in the viewing plane caused by interference of

waves undergoing diffraction.

element — a member of the set that makes up the

photomask array; used either as a functional layer

member for the fabrication of a single, integrated circuit

or for test purposes. (Replaces chip, die, bar.)

emulsion — a suspension of a salt of silver in gelatin or

collodion that is coated onto a photoplate and is

exposed and developed to produce a photomask.

energy, minimum exposure — the energy corresponding

to the total integrated energy of actinic radiation

necessary to just completely render soluble a positive

photoresist for a given replacement film thickness or

just completely render insoluble a negative photoresist

for a given single resist film thickness.

energy, optimum exposure — the energy per square

centimeter corresponding to the total integrated energy

of actinic radiation necessary to accurately reproduce

photomask pattern dimensions in a photoresist of given

thickness after exposure and development.

etch resistance — the ability of a photomask coating or

protecting material, such as photoresist, in which the

pattern is imaged or photoprinted.

SEMI P33-0998 © SEMI 19989

etch time — the time required for the removal of a

coating in an etching medium.

etchant — the chemically reactive solution used for

removal of unwanted metallic coating from a substrate.

field — the background area of a device is defined as

the area not being acted upon during the fabrication

process. Thus, if a mask is to be used to produce metal

interconnects, the area representing non-metal is the

“field.” The image polarity is named by the appearance

of this field; thus, clear field, dark (opaque) field. This

definition is very carefully stated because, in some

devices, their gross appearance is very deceiving in that

“field” cannot always be denoted as the major area.

Some devices may have diffusion of buried layers, for

instance, covering 80% of the area, the remaining 20%

being the field. Some knowledge of the fabrication

process is essential when determining field, as many of

these ambiguous conditions exist where the field is less

than 50% of the area. (ANT: active area; geometry;

trace: diffusion area.)

film adhesive — adhesive between frame and film.

film thickness, dirt — fingerprint; mark touched by

something; stain by liquid.

film thickness, particle — the particle state materials

that can be distinguished from the film itself on the film

surface or inside the film.

film thickness, pinhole — a small opening completely

through a polymer film.

fixer — a chemical solution which makes an image

permanent. In the case of silver emulsion processes, it

dissolves and removes the unexposed/undeveloped

silver halide crystals so that further darkening of the

image cannot occur.

frame adhesive — adhesive between frame and

photomask.

functional element — any contiguous fragment of a

device that is necessary to the electrical operation of the

finished device. Examples include diffused areas,

traces, gates, contacts, etc.; excludes scribe lines,

alignment marks, labels, etc. (SYN: active geometry.)

gel slug — a piece of clear, dried gelatin that has been

trapped in a silver/gelatin emulsion during coating. A

gel slug has the appearance, under a microscope, of a

clear lens-like lump, generally 0.5 – 2 mils in size, and

about twice as long as wide.

isolation layer — a partitioning, especially of bipolar

devices, usually by diffusion, to electrically insulate

functional components of an integrated circuit device.

Isolation masks are usually layer 1 or 2, and

characterized by thin lines defining open boxes all over

the die area. (SYN: isolation mask.)

latent image — the invisible image formed on any

photosensitive material after exposure. It requires some

type of development to produce a useful, visible image.

layer — one of a sequential series of overlaying

photomasks that make up a device series.

mask set — the complete series of masks for all layers,

necessary to fabricate any given device.

master drawing — the original drawing from which the

artwork is made.

master mask — original photomask, at 1× (final) scale,

generated with a photorepeater from which submasters

are printed. (SYN: master.)

matrix — the rectangular arrangement of die on a

photomask. (SYN: array.)

mechanical strength — the physical condition a pellicle

must meet to withstand a specified force from a blow-

off gun without suffering any damage to the film.

mouse bite — see mouse nip.

mouse nip — in semiconductor imaging technology, a

semicircular intrusion.

objective lens — in a microscope system, it is the lens

closest to the test specimen (object). Usually provides

the greatest amount of the total magnification and also

limits system resolution. Most commonly several

objectives, in typical powers of 10×, 20×, and 40×, are

mounted on a turret for rapid magnification changes.