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SEMI M52-0703 © SEMI 2002, 2003 12 Item Recommended Specif ication Comments References 1.6.3 Wafer edge/ B evel User specific/sel ectable 2. SETUP PARAMETERS 2.1 FQA/edge exclusion EE ≥ 1 mm, 200 and 300 mm wafers FQA 20…

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SEMI M52-0703 © SEMI 2002, 2003 11
Item Recommended Specification Comments References
1.1.15 Other defects
not required Protrusion, Flake,
Chuck Mark, Misfit,
Twin, Tweezer, Edge
Chip, Edge
Chip(peripheral), Edge
Crack, Edge Crown,
Nodule, Dopant
striation,
Gloss(specular),
Growth Ring,
Microroughness,
Orange Peel, Polishing
line, Saw Mark
1.2 System Performance for PSL
Spheres
1.2.1 Capture Rate
≥95%, 65 nm LSE and higher Wafer surface quality
must meet ITRS
requirements for 130
nm node.
SEMI M50
1.2.2 Sizing Dimension
65–2000 nm Dynamic Range
1.2.3 Count Level 3 Variability σ
3
<2.3%, 1 σ
>50, <150 LLS
count/wafer required
1.2.4 Count Matching Tolerance ∆
m
<2.6%
>50, <150 LLS
count/wafer required
1.2.5 Sizing error from interpolation
≤2% of mean diameter
65–200 nm LSE
see NOTE 1
1.2.6 Sizing Level 3 Variability σ
3
<2.3%, 1σ
65–200 nm LSE
1.2.7 Sizing Matching Tolerance
<2.3% 65–200 nm LSE
1.3 Threshold values for various defects
1.3.1 COP/Particle Classification
1.3.1.1 Classification Accuracy
≥90% For ≥80 nm LSE
1.3.1.2 Classification purity
≥95% For ≥80 nm LSE
1.4 Haze
SEMI M1
1.4.1 Level 3 Variability σ
3
<2%, 1σ
For polished and epi
wafers, average haze
1.4.2 Matching Tolerance ∆
m
<2.6% For polished and epi
wafers, average haze
1.5 Defect Coordinate, Inscribed
Reference
1.5.1 Bias
±20 µm
At minimum pitch
1.5.2 Level 3 Variability σ
3
10 µm, 1σ
At minimum pitch
1.5.3 Matching Tolerance ∆
m
13 µm At minimum pitch
1.6 Inspection Surface
1.6.1 Front side
User specific/selectable
1.6.2 Backside
User specific/selectable
SEMI M52-0703 © SEMI 2002, 2003 12
Item Recommended Specification Comments References
1.6.3 Wafer edge/ Bevel
User specific/selectable
2. SETUP PARAMETERS
2.1 FQA/edge exclusion
EE ≥1 mm, 200 and 300 mm wafers
FQA 200 mm wfrs: ≤198 mm
FQA 300 mm wfrs: ≤298 mm
p
erformance parameters
to be verified with EE
≥2 mm
2.2 Number of classification bins
arbitrary, definable,
cumulative, differential
2.2.1 LLS
10/channel
2.2.2 Bright Field Defects
10/channel
2.2.3 Haze
10/channel
2.2.4 Scratches
4/channel
2.2.5 Area Defects
4/channel
2.3 Sorting criteria
all parameters, all bins, separately and
combined
2.4 Exclusion windows
a) >5, curved/linear boundaries,
arbitrary position on entire wafer
surface
b)perimeter exclusion windows:
N zones with total area covered
≤0.001 of total wafer area in the radial
range R-2 mm to R,
total perimeter excluded at R-1 mm
≤4% of total wafer circumference, no
single zone longer than 5 mm.
a) e.g. laser mark
exclusion
b) e.g. edge gripping
exclusion
3. PERFORMANCE
3.1 Throughput
CoO issue
3.1.1 200 mm wafers
>140 wph for LLS ≥65 nm LSE
and ≥95% capture rate
3.1.2 300 mm wafers
>100 wph for LLS ≥65 nm LSE
and ≥95% capture rate
3.2 Downward compatibility
one generation Subject to limitations
imposed by changes in
geometry and number
of detectors.
SEMI M52-0703 © SEMI 2002, 2003 13
Item Recommended Specification Comments References
3.3 Calibration
automated,
In order to reduce PSL
sphere sizing
uncertainty in the
65 nm to 200 nm range,
the diameter
distribution should have
a full width at half
maximum (FWHM)
≤5%. In addition, it is
desirable that the peak
PSL diameter as
deposited on the wafer
have a relative
expanded uncertainty at
about 95% confidence
level as small as
possible but not greater
than 3%. See NOTE 2.
SEMI M53
NOTE 1: At the calibration points, if it is assumed that the SSIS sizing of PSL spheres is exactly correct, then the sizing error is caused by
differences between the response predicted by the calibration curve and the exact response of the SSIS away from calibration points. Details for
calculating this error are being developed for another standard.
NOTE 2: This specification limits the width of the diameter distribution of PSL spheres as they appear on the wafer in the calibration deposition.
The deposition system transfer function (often nominally triangular in shape) times the actual PSL diameter distribution shape presented to the
system defines the deposition width. Thus the width of the deposition on the wafer is no larger than the width of the transfer function. A narrow
width decreases calibration uncertainty in three ways. First, in the presence of background noise, it makes the distribution peak signal easier to
locate. Second, a narrow transfer function makes the deposition distribution peak easier to determine. Third, a narrow transfer function reduces
the deposition distribution asymmetry if the input PSL distribution is not symmetrical about the peak value.
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