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SEMI M23.3-0600 © SEMI 1994, 2000 3 a b d O. F. I. F. d = 5 mm 10 mm a b O. F. I. F. d d = 5 mm 15 mm Figure A1-2 Rectangular Wafers Which can be Obtained from 50 and 75 mm Round Wafers NOTICE: SEMI makes no w arra nties…

SEMI M23.3-0600 © SEMI 1994, 2000 2

APPENDIX 1

NOTE: The material in this appendix is an official part of SEMI M23.3 and was approved by full letter ballot procedures on

April 21, 2000 by the Japanese Regional Standards Committee.

A1-1 InP is a promising material for photonic devices

such as LDs, LEDs, and photodetectors for fiber

communications. The consumption of InP wafers is

increasing year by year due to the fiber communication

systems such as LAN, ISDN, and others.

A1-2 In order to fabricate these devices, many

rectangular wafers with more than 30 different sizes are

industrially used but most of the sizes are not

reasonably determined. From the viewpoint of material

yield as explained below, the standardization of

rectangular InP wafers is useful not only for InP wafer

manufacturers, but also for device manufacturers.

A1-3 Figure A1-1 shows the effective area (A) as a

function of ratio of longitudinal length (a) and of lateral

length (b). It is a fact that the largest area can be

obtained when the shape is square. However, it is

difficult to distinguish V-Groove and Dove-Tail Groove

orientations when the shape is square. It is, therefore,

necessary to make the shape rectangular in a way that

one can distinguish the orientations. It is however,

noted that if the length ratio becomes too large, the

effective area is dramatically decreased as seen in

Figure A1-1. For instance, rectangular wafers at the

point P have very little area, and most of wafer is cut

off in vain. It is, therefore, very reasonable to select the

length ratio at which the effective area is not largely

decreased. When the length ratio (a/b ratio) is √2, the

area decrease is only 5.7% as seen in Table A1-1 and

Figure A1-1. It is also interesting to note that if the

length ratio is determined as √2, each half of the

rectangular wafer again gives a similar shape with the

same ratio. In fact, this length ratio is used for paper

standardization as A3/A4 or B3/B4. Rectangular wafers

are therefore determined SEMI M23.3.

A1-4 Since there are already standardized 50 mm and

75 mm round wafers, the standardization is made in a

way that large rectangular wafers can be obtained from

these standardized wafers by removing 5 mm from the

periphery as seen in Figure A1-2. Removing of 5 mm is

due to EPD measurement specifications in which 5 mm

periphery is excluded from the measurement.

A1-5 As explained above, it is highly recommended to

use the standardized rectangular wafers because this

standardization is very important in preventing

proliferation of various sizes of rectangular wafers in

the future.

Table A1-1

a/b Ratio A (mm

) A/square

1.000 800.0 100%

1.414 754.2 94.3%

2.000 640.0 80.0%

543210

200

400

600

800

1000

a/bratio

a : b = 2 : 1

Effective Area (mm

)

Figure A1-1

Effective Area as a Function of a/b Ratio

SEMI M23.3-0600 © SEMI 1994, 20003

O. F.

I. F.

d = 5 mm

10 mm

O. F.

I. F.

d = 5 mm

15 mm

Figure A1-2

Rectangular Wafers Which can be Obtained from 50 and 75 mm Round Wafers

NOTICE: SEMI makes no warranties or representations as to the suitability of the standard set forth herein for any

particular application. The determination of the suitability of the standard is solely the responsibility of the user.

Users are cautioned to refer to manufacturer’s instructions, product labels, product data sheets, and other relevant

literature respecting any materials mentioned herein. These standards are subject to change without notice.

The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted

material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position

respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this

standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and

the risk of infringement of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI M23.4-0999 © SEMI 19991

SEMI M23.4-0999

SPECIFICATION FOR ROUND 100 mm POLISHED

MONOCRYSTALLINE INDIUM PHOSPHIDE WAFERS FOR

ELECTRONIC AND OPTOELECTRONIC DEVICE APPLICATIONS

(DOVE-TAIL TYPE)

This specification was technically approved by the Global Compound Semiconductor Committee and is the

direct responsibility of the Japanese Compound Semiconductor Committee. Current edition approved by the

Japanese Regional Standards Committee on June 1, 1999. Initially available at www.semi.org August 1999;

to be published September 1999.

NOTE: The complete specification for this product includes all general requirements of SEMI M23.

Table 1 Dimension and Tolerance Requirements

Property Dimension Tolerance Units

DIAMETER (See NOTE 1.) 100.0 ± 0.5 mm

THICKNESS, CENTER POINT 625.0 ± 25 µm

PRIMARY FLAT LENGTH 32.5 ± 2 mm

SECONDARY FLAT LENGTH 18.0 ± 2 mm

NOTE 1: The diameter standard means that the dimension is centered to this value.

Table 2 Orientation and Flat Location Requirements

Property Requirement

OPTION Dove-Tail

PRIMARY FLAT ORIENTATION

) 1 1 (0 ± 0.5 (see Figure 1 in SEMI M23) under an indium facet. The primary

flat shall be perpendicular to the “Dove-Tail” etch figure (see NOTE 1).

SECONDARY FLAT ORIENTATION

) 1 1 0( 90°=± 5° clockwise from the primary flat.

SURFACE ORIENTATION

(100) ± 0.5°=(See Figure 1 in SEMI M23.)

(100) off 2° ± 0.5° toward the

0) 1 (1 plane (see NOTE 2).

(See Figure 2 in SEMI M23.)

ORTHOGONAL MISORIENTATION

± 5°=(See Figure 3 in SEMI M23.)

NOTE 1: Since there are various etchants, the appropriate etching method for revealing etch pits can be determined by each manufacturer. For

example, see reference “HBr-K

-H

O etching system for indium phosphide” J.L. Weyher et al., Materials Science and Engineering, B28

(1994) 488-492.

NOTE 2: The frame of reference is the (100) plane of the crystal. It is the wafer normal that is tilted toward the

0) 1 (1 plane of the crystal.

NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for

any particular application. The determination of the suitability of the standard is solely the responsibility of the user.