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SEMI F42-0600 © SEMI 199 9, 2000 1 SEMI F42-0600 TEST METHOD FOR SEMICONDUCTOR PROCESSI NG EQUIPMENT VOLTA G E SAG IMMUNITY This test method was tec hnically approved by the G lobal Facilitie s Committee and is the direc…

SEMI F41-0699 © SEMI 19995

levels of fluoride which may be a concern for some

qualification processes.

9.2 Specialty Chemicals  Certain CVD chemicals

have high levels of organics which raise concerns about

chemical decomposition, residues and particulate

formation. These concerns may require customized

approaches to the design of a BCDS qualification. For

example, reservoir replacement for these types of

chemicals with vapor pressure from 1-5 Torr and above

may require the use of vacuum less than the vapor

pressure of the chemical whereas low vapor pressure

chemicals with vapor pressures from 1-5 Torr, and

viscous materials, may require a solvent purge. In

addition, purging and pickling of he BCDS and

chemical delivery lines should be performed per

Sections 7.1 and 7.2. CAUTION: UPW introduced into

the lines frequently interacts with the CVD chemicals

causing decomposition.

NOTICE: These standards do not purport to address

safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

SEMI makes no warranties or representations as to the

suitability of the standards set forth herein for any

particular application. The determination of the

suitability of the standard is solely the responsibility of

the user. Users are cautioned to refer to manufacturer’s

instructions, product labels, product data sheets, and

other relevant literature respecting any materials

mentioned herein. These standards are subject to

change without notice.

The user’s attention is called to the possibility that

compliance with this standard may require use of

copyrighted material or of an invention covered by

patent rights. By publication of this standard, SEMI

takes no position respecting the validity of any patent

rights or copyrights asserted in connection with any

item mentioned in this standard. Users of this standard

are expressly advised that determination of any such

patent rights or copyrights, and the risk of infringement

of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

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consent of SEMI.

SEMI F42-0600 © SEMI 1999, 20001

SEMI F42-0600

TEST METHOD FOR SEMICONDUCTOR PROCESSING EQUIPMENT

VOLTAGE SAG IMMUNITY

This test method was technically approved by the Global Facilities Committee and is the direct responsibility

of the North American Facilities Committee. Current edition approved by the North American Regional

Standards Committee on March 2 and April 10, 2000. Initially available on www.semi.org May 2000; to be

published June 2000. Originally published June 1999.

1 Purpose

1.1 The purpose of this document is to define the test

method used to characterize the susceptibility of

semiconductor processing, metrology, and automated

test equipment to voltage sags.

2 Scope

2.1 This document defines the testing procedures and

test equipment required to characterize the suscepti-

bility of equipment to voltage sags by showing voltage

sag duration and magnitude performance data for the

equipment.

NOTE 1: Characterizing equipment voltage sag immunity

allows for the identification of tolerances, if any, that may

exist between the actual equipment immunity and any one or

more voltage sag performance specifications.

2.2 This test method is intended for, but not limited to,

the following equipment types:

• Etch equipment (Dry & Wet)

• Film deposition equipment (CVD & PVD)

• Thermal equipment

• Surface prep and clean

• Photolithography equipment (Stepper & Tracks)

• Chemical Mechanical Polishing equipment

• Ion Implant equipment

• Metrology equipment

• Automated test equipment

2.3 This standard does not purport to address safety

issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

3 Limitations

3.1 This standard does not address testing for over-

voltage conditions.

3.2 International, national and local codes, regulations

and laws should be consulted to ensure that the

equipment and procedures meets regulatory require-

ments in each location.

4 Referenced Standards

4.1 SEMI Standard

SEMI S2 — Safety Guidelines for Semiconductor

Manufacturing Equipment

4.2 IEEE Standard

IEEE 1250 — Guide for Service to Equipment

Sensitive to Momentary Voltage Disturbances

NOTE 2: As listed or revised, all documents cited shall be the

latest publications of adopted standards.

5 Terminology

5.1 Definitions

5.1.1 device under test (DUT) — the semiconductor

process, metrology, or automated test equipment

intended to be tested, including the equipment

mainframe and all subsystems whose electrical power is

directly affected by the operation of the equipment’s

EMO system.

5.1.2 emergency off circuit (EMO) — a control circuit

which when de-activated, places the equipment into a

safe shut down condition and will restrict all hazardous

potentials to the main power enclosure. This is a state in

which all hazardous voltage has been removed from the

equipment, all hazardous production materials flow has

been stopped, any radiation sources de-energized or

totally contained, any capacitors grounded, all moving

parts stopped, internal and external heat sources shut

off, and the equipment presents minimum hazard to

personnel or the facility. [SEMI S2]

5.1.3 point of connection (POC) — the point where

the facility utility connects to the exterior of the

equipment.

5.1.4 ride-through capability — the ability of equip-

ment to withstand momentary interruptions or sags

[IEEE 1250]. Also known as voltage sag immunity.

1 The Institute of Electrical and Electronic Engineers, Inc., 345 East

47th Street, New York, NY 10017-2394, USA

SEMI F42-0600 © SEMI 1999, 2000 2

5.1.5 sag generator — test apparatus capable of

reducing voltage supplied to the device under test for

specific time durations.

5.1.6 voltage sag — an rms reductio n in the ac

voltage, at power frequency, for durations from half-

cycle to a few seconds [IEEE 1250]. Also known as

voltage dip.

6 Test Apparatus

6.1 Data Acquisition System (DAS): The DAS will

allow monitoring of the device under test and selected

subsystems during the test. The DAS must measure the

voltage and current at least two cycles (40/33 ms)

before, during, and at least two cycles (40/33 ms) after

the voltage sag event. The DAS must have the

performance characteristics defined in Table 1.

NOTE 3: (40/33 ms) refers to 40 ms at 50 Hz or 33 ms at 60

Hz.

Table 1 Data Acquisition System Performance

Requirements

Parameter Requirement

Measurement Accuracy ± 3 percent of reading

Minimum Sample Rate 900 Hz

Minimum Number of

Analog Inputs

As required by the Test Plan

(see Section 10.1.4)

6.2 Digital Volt Meter (DVM) — A digital meter with

current and voltage measurement probes. Minimum

performance requirements of 1% accuracy, true rms,

and resolution of 3 1/2 digits.

6.3 Sag Generator — The sag generator must be

capable of providing voltage sags of controlled

magnitude and duration relative to the nominal supply

voltage of the DUT. The sag generator must be able to

create voltage sags over the range of durations and

magnitudes as required. The sag generator must be

capable of producing independent output voltages on

each phase of the load. The sag generator must have the

performance characteristics in Table 2 (see Related

Information 1).

Table 2 Sag Generator Performance Requirements

Parameter Requirement

Insertion loss (the difference

between sag generator input and

output voltages when set to 100%

of nominal)

Less than 1.5%

Change in output voltage as load is

varied from 0–100% (steady state

load regulation)

± 5%

Output current capability As required by the

DUT.

Capability to supply inrush current Not to be limited by

the sag generator.

Under all conditions, the

maximum deviation from required

voltage (dynamic load regulation)

Less than ± 10% for

not more than 1

cycle (20/17 ms).

7 Safety Precautions

NOTE 4: The following are safety guidelines for voltage sag

testing and as such should be considered only recommend-

ations since regional safety regulations vary. International,

national and local codes, regulations and laws should be

consulted to ensure that the equipment and procedures meet

regulatory requirements in each testing location.

7.1 Work should be conducted in accordance with

industry standard safety procedures. Since panels may

need to be open in order to connect voltage probes and

route power leads to and from the sag generator, this

work is classified as Type 2 Energized Electrical Work

per SEMI S2. Test equipment manufacturer’s safety

recommendations should be followed.

7.2 Worker Safety

7.2.1 During testing lock and tag (lockout/tagout)

procedures should be followed to control hazardous

energy (reference appropriate regional regulations and

requirements). No circuit should be connected or wired

when electricity is present. This includes power

connections as well as the connection of various

monitoring probes.

7.2.2 The area immediately surrounding the device

under test (DUT) should be cordoned off and appro-

priate signs like “Test In Progress” should be posted.

7.2.3 Appropriate personal protective equipment

should be worn at all times.

7.2.4 Only authorized personnel should be allowed

within the cordoned off test area.

7.2.5 Work should be done as described in the test

procedure (see Section 10).