semi合集-English.pdf - 第7210页
SEMI ME1392-0305 © SEMI 2003, 2005 19 D ATA SEQUENCE This section of the data file is a list of all da ta for the measurem ent. Each data point is stor ed on a separate line end ing in a carriage return—line fe ed pair. …
SEMI ME1392-0305 © SEMI 2003, 2005 18
FILE_NAME name/number/id of this data file
MEAS_DATE date the measurement was made, mm-dd-yyyy
MEAS_TIME time the measurement finished, hh:mm:ss, 24 h format
MODE indicates whether the sample was measured in a reflective (R), transmissive (T) or both (B)
mode or is a signature (S), Values are R, T, B, S
NUM_AVE the number of measurements averaged for each data point in the data sequence
NUM_POINTS the number of data points in the data sequence, this is a mandatory field
VARS list of the field names for the variables that will appear in the data sequence, the entry after
each of these fields in the headers will be var1, var2, var3, etc. depending on the position
(column) in the data sequence
BRDF BRDF of the sample, this is normally var1
WAVELENGTH
center wavelength of the source, units are m
BANDWIDTH bandwidth of the source, FWHM
ALPHA the sample x axis position as measured from the incident plane or XB axis in degrees
THETA_I
angle of incidence,
i
PHI_I
incident azimuthal angle,
i
THETA_S
polar angle from sample normal,
s
PHI_S
scatter azimuthal angle,
s
POWER_INC total incident power on sample in watts
POWER_SCTR scattered power from the sample in watts
SPOT_SIZE
illuminated spot size, A, on the sample defined by the exp
2
power points
SOURCE_POL_I I component of the stokes vector defining the source polarization
SOURCE_POL_M M component of the stokes vector defining the source polarization
SOURCE_POL_C C component of the stokes vector defining the source polarization
SOURCE_POL_S S component of the stokes vector defining the source polarization
RX_POL_I I component of the stokes vector defining the receiver polarization selection
RX_POL_M M component of the stokes vector defining the receiver polarization selection
RX_POL_C C component of the stokes vector defining the receiver polarization selection
RX_POL_S S component of the stokes vector defining the receiver polarization selection
SOURCE_POL_ORN the angular orientation of linear polarization for the source light wrt the PLIN, p = 0°,
s = 90°, in degrees from 0 to 90°
RX_POL_ORN the angular orientation of a linear polarizer in the receiver wrt the scatter plane, P = 0°,
S = 90°, in degrees from 0 to 90°
RX_DIST rotational radius of the aperture stop defining the solid angle for the BRDF calculation
APER_SIZE size of the aperture stop, this is the width of a slit or the diameter of a circular aperture or the
area of a bow tie or other type of complex aperture
RX_FOV receiver FOV in steradians
SAMPLE_TEMP sample temperature in degrees K
SAMPLE_ATM_KW key words that describe the test atmosphere surrounding the sample during the measurement
such as vacuum, air, vapor, chemical
SAMPLE_PRES pressure of the gas surrounding the sample in torr
SAMPLE_HUMID humidity of the gas surrounding the sample in percent
SOURCE_CONV the source convergence or divergence at the sample in radians, convergence is positive and
divergence is negative
SPOT_X illuminated spot position in the X direction with respect to sample center
SPOT_Y illuminated spot position in the Y direction with respect to sample center
SPOT_Z sample front surface location with respect to the center of rotation of the instrument. A
sample mounted so the front surface was the surface inspected would have a value of 0.0. A
sample mounted so the back surface was the surface inspected such as a back surface
reflector would have a value equal to the sample thickness
MEAS_COMMENTS comments that pertain to the measurement
SEMI ME1392-0305 © SEMI 2003, 2005 19
D
ATA SEQUENCE
This section of the data file is a list of all data for the measurement. Each data point is stored
on a separate line ending in a carriage return—line feed pair. Separate variables in the line
are delimitated with commas. There is no imposed limit to the number of variables in the
line. Variables that do not change from the data point to the next do not have to be repeated,
but two commas are needed to reserve the column.
NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for any
particular application. The determination of the suitability of the standard is solely the responsibility of the user.
Users are cautioned to refer to manufacturer's instructions, product labels, product data sheets, and other relevant
literature, respecting any materials or equipment mentioned herein. These standards are subject to change without
notice.
By publication of this standard, Semiconductor Equipment and Materials International (SEMI) takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any items mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction of
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI MF26-0305 © SEMI 2003, 2005 1
SEMI MF26-0305
TEST METHODS FOR DETERMINING THE ORIENTATION OF A
SEMICONDUCTIVE SINGLE CRYSTAL
These test methods were technically approved by the Global Silicon Wafer Committee and are the direct
responsibility of the North American Silicon Wafer Committee. Current edition approved for publication by
the North American Regional Standards Committee on December 10, 2004. Initially available at
www.semi.org February 2005; to be published March 2005. Original edition published by ASTM
International as ASTM E 26-63T. Last previous edition SEMI MF26-87a (Reapproved 1999).
1 Purpose
1.1 The orientation of semiconductor crystals and wafers as determined by these test methods is an important
materials acceptance requirement because the orientation controls various parameters of semiconductor devices
fabricated from the material.
2 Scope
2.1 These test methods cover techniques for determining the crystallographic orientation of a surface which is
roughly parallel to a low-index atomic plane in single crystals used primarily for semiconductor devices.
NOTE 1: DIN 50433 contains equivalent methods. It is the responsibility of DIN Committee NMP 221. DIN 50433, Testing of
Inorganic Semiconductor Materials: Determining the Orientation of Monocrystals; Part 1 with an X-ray Goniometer, and Part 2
by the Light-figure Method, is available from Beuth Verlag GmbH, Burggrafenstrasse 6, 10787 Berlin, Germany, Website:
www.beuth.de.
2.2 Two types of test methods are covered as follows:
2.2.1 Test Method A, X-ray Diffraction Orientation — This test method may be used for the orientation of all
semiconductive single crystals. The X-ray test method is nondestructive and yields the more precise measurement
of orientation; however, use of the equipment requires compliance with stringent safety regulations.
2.2.2 Test Method B, Optical Orientation — This test method is limited in application at the present time to
elemental semiconductors. The optical test method requires etching the specimen and is therefore destructive of
polished wafer surfaces. This test method is less precise than the X-ray test; however, the apparatus required is less
complex.
NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the
responsibility of the user of this standard to establish appropriate safety and health guides and determine the
applicability of regulatory or other limitations prior to use.
3 Referenced Standards
3.1 SEMI Standards
SEMI C28 — Specifications and Guidelines for Hydrofluoric Acid
SEMI C30 — Specifications and Guidelines for Hydrogen Peroxide
SEMI C40 — Specification for Potassium Hydroxide, 45% Solution
SEMI C43 — Specification for Sodium Hydroxide, 50% Solution
3.2 ASTM Standards
D 5127 — Guide for Ultra Pure Water Used in the Electronics and Semiconductor Industry
1
E 82 — Test Method for Determining the Orientation of a Metal Crystal
2
1 Annual Book of ASTM Standards, Vol 11.01, ASTM International, 100 Barr Harbor Drive, West Conshohocken, PA 19428. Telephone: 610-
832-9500, Fax: 610-832-9555, Website:
www.astm.org
2 Annual Book of ASTM Standards, Vol 03.01.