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SEMI M8-0703 © SEMI 1984, 2003 1 SEMI M8-0703 SPECIFICATION FOR POLISHED MO NOCRYSTALLINE SILICON TEST WAFERS This specification was technically approved by th e Global Silicon Wafer Committee and is the direct responsib…

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SEMI M6-1000 © SEMI 1981, 2000 8
APPENDIX 1
NOTE: The material in this appendix is an official part of SEMI M6 and was approved by full letter ballot procedures on July 28,
2000 by the European Regional Standards Committee.
A1-1 Crystal Orientation of Monocrystalline silicon
wafers
A1-1.1 A typical crystal orientation fo r monocrystal-
line silicon wafers is <100>.in the plane of the wafer.
A1-2 Wafer resistivity
A1-2.1 Typical wafer resistivity is between 0.5 Ω-cm
and 2 Ω-cm.
A1-3 Oxygen and Carbon Contents
A1-3.1 Typical values.
A-1.3.1.1 Interstitial oxygen < l × 10
l8
at /cm
3
for CZ
material and less than 8 × 10
17
at/cm
3
for multicrystal-
line wafers.
A-1.3.1.2 Substitutional carbon < 5 × 10
l7
at/cm
3
for
CZ and 1 × 10
l8
at/cm
3
for multicrystalline material.
A1-4 Lifetime and Minority Carrier Diffusion Length
A1-4.1 Typical minority carrier lifetim e values for
wafers used in the solar cell manufacturing process lie
in a range between 1 µs and 20 µs.
NOTICE: SEMI makes no warranties or
representations as to the suitability of the guidelines set
forth herein for any particular application. The
determination of the suitability of these guidelines is
solely the responsibility of the user. Users are cautioned
to refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature
respecting any materials mentioned herein. These
guidelines are subject to change without notice.
The user’s attention is called to the possibility that
compliance with this standard may require use of
copyrighted material or of an invention covered by
patent rights. By publication of this standard, SEMI
takes no position respecting the validity of any patent
rights or copyrights asserted in connection with any
item mentioned in this standard. Users of this standard
are expressly advised that determination of any such
patent rights or copyrights, and the risk of infringement
of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI M8-0703 © SEMI 1984, 2003 1
SEMI M8-0703
SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON TEST
WAFERS
This specification was technically approved by the Global Silicon Wafer Committee and is the direct
responsibility of the North American Silicon Wafer Committee. Current edition approved by the North
American Regional Standards Committee on April 11, 2003. Initially available at www.semi.org June 2003;
to be published July 2003. Originally published in 1984; previously published March 2001.
NOTICE: This document was completely rewritten in
2003.
1 Purpose
1.1 This specification covers requirements for virgin
silicon test wafers to be used for mechanical testing,
and routine process monitoring in semiconductor
manufacturing.
2 Scope
2.1 This specification covers dimensional and
crystallographic properties of monocrystalline virgin
silicon test wafers together with selected electrical and
surface defect characteristic.
2.2 This specification covers virgin test wafers in all
standard wafer diameters from 2 inch to 300 mm. It
classifies test wafers according to the items specified.
It provides three classes of smaller diameter test wafers
(through 125 mm), and two classes of larger diameter
test wafers (from 150 mm).
2.3 This specification does not cover test wafers
intended for applications placing higher demands on
silicon wafers, such as particle counting, measuring
resolution in a photolithography process, or monitoring
metallic contamination; for wafers to be used in these
applications, the user should reference SEMI M24.
2.4 For referee purposes, U.S. customary units shall be
used for wafers of 2- and 3-inch nominal diameter and
SI (System International), commonly called metric
units, for 100 mm and larger diameter wafers.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Referenced Standards
3.1 SEMI Standards
SEMI M1 — Specifications for Polished
Monocrystalline Silicon Wafers
SEMI M18 — Format for Silicon Wafer Specification
Form for Order Entry
SEMI M24 — Specification for Polished
Monocrystalline Silicon Premium Wafers
3.2 ASTM Standards
1
F1241 — Standard Terminology of Silicon Technology
3.3 Other Standards
A comprehensive list of applicable standard test
methods from a variety of sources is given in Table 1 of
SEMI M18.
NOTICE: Unless otherwise indicated, all documents
cited shall be the latest published versions.
4 Terminology
4.1 Definitions of terms related to silicon wafer
technology are given in ASTM Terminology F1241.
4.2 Definitions for some additional relevant terms are
given in SEMI M1.
4.3 The following definitions apply in the context of
this specification:
4.4 Definitions
4.4.1 mechanical test wafer — silicon wafer suitable
for testing equipment with emphasis on dimensional
and structural characteristics only.
4.4.2 process test wafer — silicon wafer suitable for
process monitoring as well as some processing
applications in semiconductor manufacturing. Also
called monitor wafer.
4.4.3 virgin test wafer — test wafer that has not been
used previously in semiconductor manufacturing.
1 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohocken, Pennsylvania 19428-2959, USA.
Telephone: 610.832.9585, Fax: 610.832.9555 Website:
www.astm.org
SEMI M8-0703 © SEMI 1984, 2003 2
5 Ordering Information
5.1 Small Diameter Wafers
5.1.1 Items that may be specified when ordering silicon
wafers are listed in SEMI M18. Not all of these items
are required for ordering small diameter (2 in., 3 in.,
100 mm, and 125 mm) test wafers. The following
items are included in the three specification groups
shown in Table 1; numbers in square brackets following
the item are the item numbers in SEMI M18:
5.1.1.1 Group 1, General and Geometrical — Growth
method [1.1], diameter [6.1], surface orientation [6.9],
thickness [6.7], orientation fiducials (flats and notches)
[6.2–6.5], and edge profile [6.6].
5.1.1.2 Group 2, Surface Characteristics — Surface
defects as listed in Tables 3 and 4 [7.1–7.2, 8.1–8.16].
5.1.1.3 Group 3, Basic Intrinsic Properties —
Conductivity type [1.3], dopant [1.4], and resistivity
[2.1].
Table 1 Classifications for Small Diameter Wafers
Classification Applicable Specification Groups
A 1, 2, 3
B 1, 2
C 1
5.1.2 Not all of the above items must be specified
explicitly; the specifications for many of the items are
determined by the combination of wafer classification
and nominal diameter. In all cases, the following must
be specified on the purchase order for all classes of
small diameter test wafers:
5.1.2.1 Wafer Classification (A, B or C),
5.1.2.2 Nominal diameter and surface orientation,
5.1.2.3 Growth method (see Section 7.1),
5.1.2.4 Lot acceptance procedures (see Section 9.1),
5.1.2.5 Certification (if required) (see Section 12),
5.1.2.6 Packing and Marking (see Section 13),
5.1.2.7 Any options listed in the table, and
5.1.2.8 Appropriate test methods when more than one
is listed for the parameter in Table 1 of SEMI M18.
5.1.3 For Class A and B test wafers, that require
controlled surface characteristics, certain surface defect
limits (see Section 11), must be specified in addition to
the items listed in Section 5.1.2, see Table 3, Sections
8.1–8.16.
5.1.4 For Class A wafers, the following must be
specified in addition to the items listed in Sections 5.1.2
and 5.1.3 (see Section 8.1):
5.1.4.1 Conductivity type
5.1.4.2 Resistivity
5.2 Large Diameter Wafers
5.2.1 Items that may be specified when ordering silicon
wafers are listed in SEMI M18. Not all of these items
are required for ordering large diameter (150, 200, and
300 mm) test wafers. The following items are included
in the two specification groups shown in Table 2;
numbers in square brackets following the item are the
item numbers in SEMI M18.
Table 2 Wafer Classifications for Large Diameter
Wafers
Classifications Applicable Specification Groups
Mechanical 1
Process 1, 2
5.2.1.1 Group 1, General and Geometrical ― Growth
method [1.1], diameter [6.1], surface orientation [6.9],
thickness [6.7], orientation fiducials (flats and notches)
[6.2–6.5], and edge profile [6.6].
5.2.1.2 Group 2, Surface and Intrinsic Properties ―
Surface defects as listed in Table 3 [7.1–7.2, 8.1–8.16],
conductivity type [1.3], dopant [1.4], and resistivity
[2.1].
5.2.2 Not all the specifications must be specified
explicitly; the specifications for many of the items are
determined by wafer classification and nominal
diameter. In all cases the following must be specified
on the purchase order for all classes of large diameter
test wafers:
5.2.2.1 Wafer Classification (Mechanical or Process),
5.2.2.2 Nominal diameter and surface orientation,
5.2.2.3 Growth method (see Section 7.1),
5.2.2.4 Lot acceptance procedures (see Section 9.1),
5.2.2.5 Certification (if required) (see Section 12),
5.2.2.6 Packing and Marking (see Section 13),
5.2.2.7 Any options listed in the table, and
5.2.2.8 Appropriate test methods when more than one
is listed for the parameter in Table 1 of SEMI M18.
6 Dimensions and Permissible Variations
6.1 The material shall conform to the parameters as
specified in Table 3, 4, or 5.