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SEMI M47-0704 © SEMI 2001, 2004 4 Specification Units Item SIMOX Bonded Standard reference Test method (Refer to SEMI M18.) (Refer to SEMI M18.) 8. FRONT SURFACE VISUAL INSPECTION CHARACTERISTICS 8.01 Specified according…

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SEMI M47-0704 © SEMI 2001, 2004 3
• Sampling plan and lot acceptance procedures (see
Section
7)
• Methods of test and measurements (see Section 8)
6 Requirement
6.1 Requirements of SOI wafers consists of a base
silicon wafer specification part and an SOI wafer
specification part. A base silicon wafer is specified
based on a SEMI M18 format. A similar format is
applied for the specification of an SOI wafer.
6.2 As a minimum, the base silicon wafer shall
conform to SEMI M1 and the appropriate individual
polished monocrystalline silicon wafer standard; i.e.
JEITA EM-3602.
6.3 SOI wafer specified items and test methods are
listed in Table 1 and shall not exceed the limits as given
in Table 1.
Table 1 Specification of SOI Wafers for CMOS LSI Applications
Specification Units
Item
SIMOX Bonded
Standard
reference
Test method
Base Silicon Wafer
1. GENERAL CHARACTERISTICS
1.1 Growth Method CZ CZ
1.2 Crystal Orientation
(100) ± 1° (100) ± 1°
SEMI MF26 X-ray diffraction
1.3 Conductivity Type P-type P-type SEMI MF42 Hot point probe
1.4 Dopant Boron Boron
1.5 Edge Exclusion, Nominal 3 (mm) 3 (mm)
2. ELECTRICAL CHARACTERISTICS
2.1 Resistivity (Center Point) See NOTE 1. See NOTE 1. SEMI MF84 4-point probe
3. CHEMICAL CHARACTERISTICS
3.1 Oxygen Concentration See NOTE 1. See NOTE 1. SEMI MF1188,
SEMI MF1619,
JEITA EM-3504
IR absorption
4. STRUCTURAL CHARACTERISTICS
4.2 Slip None None SEMI MF523 Visual inspection
4.3 Lineage None None SEMI MF523 Visual inspection
4.4 Twin None None SEMI MF523 Visual inspection
4.5 Swirl None None SEMI MF523 Visual inspection
4.6 Shallow Pits None None SEMI MF523 Visual inspection
5. WAFER PREPARATION CHARACTERISITICS
5.1 Wafer ID See NOTE 1. See NOTE 1.
5.4 Extrinsic Gettering
Treatment
See NOTE 1. See NOTE 1.
6. MECHANICAL CHARACTERISTICS
Nominal Diameter 150 / 200 (mm) 150 / 200 (mm) SEMI MF2074 6.1
Diameter Tolerance
≤ ± 0.2 (mm) ≤ ± 0.2 (mm)
SEMI MF2074
6.2 Primary Flat
Length/Notch Dimension
SEMI M1 or
JEITA EM-3602
SEMI M1 or
JEITA EM-3602
6.3 Primary Flat/Notch
Orientation
[011] ± 1° [011] ± 1°
SEMI MF671,
SEMI MF1152
6.6 Edge Profile SEMI M1 SEMI M1 SEMI MF928
6.6.1 Edge Surface Finish See NOTE 1. See NOTE 1. SEMI MF928
6.7 Thickness SEMI M1 or
JEITA EM-3602
SEMI M1 or
JEITA EM-3602
SEMI MF533 Thickness gauge
6.8 Thickness Variation
(TTV)
SEMI M1 SEMI M1 SEMI MF533 Thickness gauge
6.14 Flatness Site See NOTE 1. See NOTE 1.
SEMI M47-0704 © SEMI 2001, 2004 4
Specification Units Item
SIMOX Bonded
Standard
reference
Test method
(Refer to SEMI
M18.)
(Refer to SEMI M18.)
8. FRONT SURFACE VISUAL INSPECTION CHARACTERISTICS
8.01 Specified according to
SEMI M1 Table 1
SEMI MF523 Visual inspection
9. BACK SURFACE VISUAL INSPECTION CHARACTERISTICS
9.01 Specified according to
SEMI M1 Table 1
SEMI MF523 Visual inspection
SOI Wafer
25. SOI LAYER CHARACTERISTICS
25.0 Type of SOI SIMOX Bonded
25.1 Growth Method CZ See NOTE 1.
25.2 Surface Silicon Thickness
≤ 0.2 (µm)
See NOTE 1.
≤ 0.2 (µm)
See NOTE 1.
Spectroscopic
ellipsometry,
Spectroscopic
reflectometry
25.3 Surface Silicon Thickness
Mean Value Variation
≤ ± 5 (nm) ≤ ± 5 (nm)
See NOTE 2.
Spectroscopic
ellipsometry,
Spectroscopic
reflectometry
25.4 Surface Silicon Thickness
Variation in Wafer
≤ ± 3 (nm) ≤ ± 7.5 (nm)
See NOTE 2.
25.5 Crystal Orientation
(100) ± 1° (100) ± 1°
SEMI MF26 X-ray diffraction
25.6 Rotation Misalignment NA
≤ ± 1°
Visual
25.7 Edge Exclusion, Nominal 5 (mm)
See NOTE 3.
5 (mm)
See NOTE 3.
25.8 Non-SOI Edge Area NA ≤ 3 (mm)
Visual
25.9 Conductivity Type P-type P-type SEMI MF42
25.10 Dopant Boron Boron Secondary ion mass
spectroscopy
25.11 Dopant Concentration See NOTE 1. See NOTE 1. Secondary ion mass
spectroscopy
25.12 SOI Etch Pit < 1 × 10
6
(/cm
2
) < 1 × 10
4
(/cm
2
) Secco's etching
25.13 Threading Dislocation < 5 × 10
4
(/cm
2
)
(LD)
< 5 × 10
5
(/cm
2
)
(HD)
NA Secco's etching
25.14 HF Defect < 0.5 (/cm
2
) < 0.5 (/cm
2
)
(150 mmφ)
< 0.3 (/cm
2
)
(200 mmφ)
HF etching
25.15 Void NA See NOTE 1. Visual, Automated
particle counter
25.16 Roughness (Si surface)
rms @ 2 × 2µm
< 0.4 (nm) < 0.2 (nm) JEITA EM-3505 Atomic force microscope
25.17 Surface Metal
Contamination (Fe, Cr,
Ni, Cu)
< 5 × 10
10
(/cm
2
)
for each atom
< 5 × 10
10
(/cm
2
) for
each atom
SEMI MF1526 TXRF
AAS, ICP-MS
SEMI M47-0704 © SEMI 2001, 2004 5
Specification Units Item
SIMOX Bonded
Standard
reference
Test method
26. BOX CHARACTERISTICS
26.1 BOX Thickness
≤ 0.4 (µm)
See NOTE 1.
≤ 0.4 (µm)
See NOTE 1.
Spectroscopic
ellipsometry,
Spectroscopic
reflectometry
26.2 BOX Thickness Variation
≤ ± 5 (%) ≤ ± 5 (%)
Spectroscopic
ellipsometry,
Spectroscopic
reflectometry
26.3 Bonded Interface Location
NA See NOTE 1.
26.4 BOX Pinholes < 0.5 (/cm
2
) (LD)
< 0.1 (/cm
2
) (HD)
< 0.1 (/cm
2
) Cu plating, BOX
capacitor
26.5 Dielectric Breakdown > 5 (MV/cm) > 6 (MV/cm) BOX capacitor
27. MECHANICAL CHARACTERISTICS
27.1 Warp < 40 (µm) (LD)
< 50 (µm) (HD)
< 40 (µm) SEMI MF1390 Automated noncontact
scanning
27.2 Flatness-site See NOTE 1.
(Refer to SEMI
M18.)
See NOTE 1.
(Refer to SEMI M18.)
28. FRONT SURFACE VISUAL INSPECTION CHARACTERISTICS
28.1 Scratch None None SEMI MF523 Visual inspection
28.2 Haze None None SEMI MF523 Visual inspection
28.3 LLS
@particle size
≤ 0.3 (/cm
2
) @ >
0.25 µm
≤ 0.3 (/cm
2
) @ > 0.2
µm
SEMI MF523 Automated particle
counter
28.4 Slip See NOTE 1. See NOTE 1. SEMI MF523 Visual inspection
28.5 Edge Chip SEMI M1 SEMI M1 SEMI MF523 Visual inspection
28.6 Edge Crack SEMI M1 SEMI M1 SEMI MF523 Visual inspection
28.7 Foreign Matter See NOTE 1. See NOTE 1. SEMI MF523 Visual inspection
29. BACK SURFACE CHARACTERISTICS
29.1 Backside Metal
Contamination (Fe, Cr,
Ni, Cu)
< 1 × 10
11
(/cm
2
)
for each atom
< 1 × 10
11
(/cm
2
) for
each atom
AAS, ICP-MS
NOTE 1: to be specified or discussed between users and suppliers
NOTE 2: typically 0.1 µm and thicker SOI are specified. Thinner SOI is to be discussed between users and suppliers.
NOTE 3: It is specified by a distance from the FQA boundary to the periphery of a base wafer of nominal dimensions. It is not a distance from an
edge of an SOI layer.
NA: not applicable
LD: Low dose SIMOX
with BOX thickness ≤ 200 nm
HD: High dose SIMOX with BOX thickness > 200 nm
7 Sampling Plan
7.1 Unless otherwise specified, ASTM Practice E 122
shall be used. When so specified, appropriate sample
sizes shall be selected from each lot in accordance with
ANSI/ASQC Z1.4. Each quality characteristic shall be
assigned with an acceptable quality level (AQL) of lot
tolerance percent defective (LTPD) value in accordance
with ANSI/ASQC Z1.4 definitions for critical, major,
and minor classifications. If desired and so specified in
the contract or order, each of these classifications may
alternatively be assigned cumulative AQL or LTPD
values. Inspection levels shall be agreed upon between
users and suppliers.
8 Test Methods
8.1 Thickness of Surface Silicon Layer and Buried
Oxide Layer
8.1.1 Measurement Methods Two non-contact, non-
destructive optical characterization techniques,
spectroscopic ellipsometry (SE) and spectroscopic