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SEMI M37-0699 © SE MI 1999 2 Figure 1 Countin g position s for a 50 mm diameter wafer NOTICE: These st andards do not purport to addres s safety issues, if any, ass o ciated with their use. It is the responsibility of t …

SEMI M37-0699 © SEMI 19991

SEMI M37-0699

TEST METHOD FOR MEASURING ETCH PIT DENSITY (EPD) IN LOW

DISLOCATION DENSITY INDIUM PHOSPHIDE WAFERS

This test method was technically approved by the Global Compound Semiconductor Committee and is the

direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current edition

approved by the Japanese Regional Standards Committee on March 17, 1999. Initially available at

www.semi.org April 1999; to be published June 1999.

1 Purpose

1.1 This document provides a method to measure etch

pit density (EPD) in low dislocation density InP wafers.

2 Scope

2.1 This test method describes a procedure to measure

EPD of 50 mm diameter round InP wafers with an EPD

of less than 5000/cm

2.2 This standard does not purport to address all of the

safety issues. It is the responsibility of the user of this

standard to establish appropriate safety and health

practices and to determine the applicability of

regulations prior to use of the test method.

3 Referenced Document

3.1 ASTM Standard

F 140-92 — Test Method for Crystallographic

Perfection of Gallium Arsenide by Molten Potassium

Hydroxide (KOH) Etch Technique.

4 Apparatus

4.1 Microscope — Measuring field should be 1 mm

or larger.

NOTE: For accurate EPD measurement, accurate area of the

measuring field should be measured by a standard scale.

5 Procedure

5.1 Orient the ingot so that the front surface normal

direction of the sample is parallel to the <100> within

5°, and then cut a wafer from the ingot.

5.2 Polish the wafer to form a mirror finish.

Afterwards, the wafer must be cleaned and dried.

5.3 Mix phosphoric acid (H

) and hydrobromic

acid (HBr) in a beaker. The ratio of each acid is H

HBr=2:1.

5.4 Immerse the wafer in the mixed acid for 3 minutes

at room temperature.

5.5 Rinse the wafer with deionized water and then dry.

5.6 The counting positions are shown in Figure 1. The

counting points are located in the center of each mesh.

The mesh size is 5 mm and the total number of

counting positions is 69. Position 35 is located at the

center of the wafer.

5.7 Count and record the number of etch pits for

which the cores are in the measuring field. If the pits

are crowded and are difficult to count, increase the

magnification. After that count the etch pits and record

the results as well as the microscope magnification.

5.8 Repeat Section 5.8 for all other positions, 2

through 69.

6 Calculations

6.1 The EPD in each measuring field is the number of

pits counted divided by the area.

EPD = (Number of pits) / Area

For example, if the size of measuring field is exactly 1

mm × 1 mm, the area is 0.01 cm

7 Report

7.1 There are several forms that are possible for

reporting the EPD, for example the average EPD of all

the positions or the area less than some specified value

or map of EPD for the entire wafer, etc. An appropriate

report form should be decided between the supplier and

the user.

SEMI M37-0699 © SEMI 1999 2

Figure 1

Counting positions for a 50 mm diameter wafer

NOTICE: These standards do not purport to address

safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

SEMI makes no warranties or representations as to the

suitability of the standards set forth herein for any

particular application. The determination of the

suitability of the standard is solely the responsibility of

the user. Users are cautioned to refer to manufacturer's

instructions, product labels, product data sheets, and

other relevant literature respecting any materials

mentioned herein. These standards are subject to

change without notice.

The user's attention is called to the possibility that

compliance with this standard may require use of

copyrighted material or of an invention covered by

patent rights. By publication of this standard, SEMI

takes no position respecting the validity of any patent

rights or copyrights asserted in connection with any

item mentioned in this standard. Users of this standard

are expressly advised that determination of any such

patent rights or copyrights, and the risk of infringement

of such rights are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI M38-1104 © SEMI 1999, 2004 1

SEMI M38-1104

SPECIFICATION FOR POLISHED RECLAIMED SILICON WAFERS

This specification was technically approved by the Global Silicon Wafer Committee and is the direct

responsibility of the North American Silicon Wafer Committee. Current edition approved by the North

American Regional Standards Committee on August 16, 2004. Initially available at www.semi.org

September 2004; to be published November 2004. Originally published September 1999; previously

published November 2001.

NOTICE: This document was completely rewritten in

2004.

1 Purpose

1.1 Silicon wafers are often subjected to reclaim

processes in order to improve manufacturing efficiency

in device production. A reclaimed wafer is one that has

been re-conditioned for subsequent utilization.

1.2 This specification covers requirements for

reclaimed silicon wafers to be used for testing and

process monitoring in semiconductor manufacturing.

1.3 In some instances for 300 mm wafers with supplier

marked back surfaces, it is necessary to re-inscribe the

mark after one or more reclaim cycles. Consequently,

this specification also includes an appendix that covers

the re-inscription of such wafers.

NOTE 1: Issues related to the re-inscription of such 300 mm

wafers are discussed in Related Information 1.

2 Scope

2.1 This specification divides reclaimed wafers into

four application categories: Mechanical, Furnace,

Particle, and Lithography and provides tables of the

specification requirements for each category. Thus, a

prospective purchaser of reclaimed silicon wafers needs

to know which application matches his or her

requirements.

2.2 Only requirements for some attributes are specified

in Tables 1 and 2. Other requirements are indicated to

be “customer specified” which means that the customer

may specify a requirement for that particular attribute,

“as-supplied” which means that the attribute has

whatever value was supplied in the wafer delivered (or

used) for reclaim, and “unspecified” which means that

the attribute is not specified and for which the wafer

does not need to be tested.

2.3 In addition to the general categories listed in

Section 2.1, this specification provides requirements for

reclaimed wafers intended for use in advanced device

production, including devices in the 180 and 130 nm

technology generations in a third table.

2.4 This specification is directed specifically to silicon

wafers with one or both polished surfaces. If the wafers

have epitaxial deposits, the attributes of the epitaxial

layer are not included the specification requirements.

2.5 This specification covers reclaim wafers that are

either customer-supplied or third party-sourced. The

user should exercise caution when sourcing materials

with unknown thermal histories, unknown bulk

contamination, or unknown deposits, such as gold (Au)

films.

2.6 For applications placing higher demands on silicon

wafers such as particle counting, measuring pattern

resolution in a photolithography process, or surface ion

contamination monitoring, the customer may want to

reference SEMI M1, SEMI M8, or SEMI M24.

2.7 For referee purposes, U.S. customary units shall be

used for wafers of 2- and 3-inch nominal diameter and

SI (System International), commonly called metric,

units for 100 mm and larger diameter wafers.

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory or other limitations prior

to use.

3 Referenced Standards

3.1 SEMI Standards

SEMI M1 — Specifications for Polished

Monocrystalline Silicon Wafers

SEMI M8 — Specification for Polished

Monocrystalline Silicon Test Wafers

SEMI M18 — Format for Silicon Wafer Specification

Form for Order Entry

SEMI M24 — Specification for Polished

Monocrystalline Silicon Premium Wafers

SEMI M31 — Provisional Mechanical Specification for

Front Opening Shipping Box Used to Transport and

Ship 300 mm Wafers

SEMI M45 — Provisional Shipping System for 300

mm Wafer Shipping System

SEMI MF1241 — Terminology of Silicon Technology