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SEMI P38-1103 © SEMI 2002, 2003 7 Table 6 Uniformity Of EUV Reflectivity Of Multilayer Stack Class Maximum range of peak reflectivity(absolute) Maximum range of bandwidth(nm at FWHM) Maximum range of centroid wavelength …

SEMI P38-1103 © SEMI 2002, 2003 6

Table 2 Ordering Information For Multilayer And Absorber Stacks On EUVL Mask Blanks

Property Requirement Included in order for Type 1 (See Note 1.)

Type Specified type from Table 1 Yes

Defect quality area Agreed upon between user and supplier Yes

Flatness Agreed upon between user and supplier Yes

Layer quality area Agreed upon between user and supplier Yes

Material composition of multilayers Agreed upon between user and supplier Yes

Composition of capping layers on the

multilayer stack

Agreed upon between user and supplier Yes

Multilayer stack mean median reflected

wavelength

Agreed upon between user and supplier Yes

Multilayer stack mean peak reflectivity Specified class from Table 5 Yes

Multilayer stack peak reflectivity

uniformity

Specified class from Table 6 Yes

Multilayer stack defects Specified class from Table 13 Yes

Absorber stack defects Specified class from Table 14 No

Absorber stack material composition Agreed upon between user and supplier No

Optical properties of absorber stack Specified class from Table 11 No

Electrical resistance measured between

the surface of the absorber stack and the

backside of the mask blank

Agreed upon between user and supplier No

Note 1: All items in Table 2 are included in the label for mask blank types 2 and 3.

Table 3 Properties of Multilayer Stack

Multilayer stack property Value

Material composition of layers Agreed upon between user and supplier

Stress Agreed upon between user and supplier

Capping layer thickness Agreed upon between user and supplier

Capping layer composition Agreed upon between user and supplier

Peak reflectivity change after 50 billion pulses in EUV

exposure tool (See Note 1.)

Agreed upon between user and supplier

Note 1: ≥ 1 mJ/cm

/pulse in a bandwidth that equals 2% of the nominal wavelength full width at half maximum (FWHM).

Table 4 Median Wavelength And Bandwidth Of EUV Reflectivity Of Multilayer Stack

Mean FWHM of reflectivity versus wavelength > 0.50 nm

Mean median reflected wavelength Agreed upon between user and supplier

Note 1: Mean is determined from measurements made at different spatial locations on the mask blank surface. Sample size and measurement

locations for determining mean are to be agreed upon between user and supplier.

Table 5 Peak EUV Reflectivity Of Multilayer Stack

Class Mean peak reflectivity

A > 67%

B 65–67%

C 63–65%

D 60–63%

Note 1: Mean is determined from measurements made at different spatial locations on the mask blank surface. Sample size and measurement

locations for determining mean are to be agreed upon between user and supplier.

SEMI P38-1103 © SEMI 2002, 2003 7

Table 6 Uniformity Of EUV Reflectivity Of Multilayer Stack

Class Maximum range of peak

reflectivity(absolute)

Maximum range of

bandwidth(nm at FWHM)

Maximum range of centroid wavelength

(nm)

A 0.50% 0.005 0.06

B 0.70% 0.005 0.08

C 0.80% 0.01 0.1

D 1.20% 0.01 0.12

Note 1: Mean is determined from measurements made at different spatial locations on the mask blank surface. Sample size and measurement

locations for determining range are to be agreed upon between user and supplier.

Table 7 Properties of Buffer Layer

Buffer layer properties Requirement

Buffer layer etch selectivity to multilayer Agreed upon between user and supplier

Buffer layer material composition Agreed upon between user and supplier

Focused ion beam etch selectivity between buffer layer

and absorber

Agreed upon between user and supplier

Focused ion beam etch selectivity between buffer layer

and multilayer

Agreed upon between user and supplier

Secondary electron contrast of the buffer layer surface

with respect to the surface of the absorber layer(s) for

between 0.5 and 2 kV primary electrons

Agreed upon between user and supplier

Secondary electron contrast of the buffer layer surface

with respect to the surface of the capping layer(s) for

between 0.5 and 2 kV primary electrons

Agreed upon between user and supplier

Buffer etch selectivity to absorber stack Agreed upon between user and supplier

Buffer layer thickness Agreed upon between user and supplier

Table 8 Properties Of Absorber Layer or Layers

Absorber layer properties Requirement

Material composition of absorber layer(s) Agreed upon between user and supplier

Thickness of absorber layer(s) Agreed upon between user and supplier

Table 9 Properties Of Absorber Stack

Attribute Requirement

Stress −200 to 200 MPa

Mean reflectivity at EUV wavelength (See Note 1 and 2.) < 0.5%

Uniformity of EUV reflectivity < 0.1% TIR

Thickness uniformity Agreed upon between user and supplier

Etch rate in cleaning solutions (See Note 3.) Agreed upon between user and supplier

Thickness change after 50 billion pulses in EUV exposure tool (See

Note 4.)

< 1 nm

Stress change after 50 billion pulses in EUV exposure tool (See

Note 4.)

< 50 MPa

Absorber stack outgassing during EUV radiation (See Note 4.) Agreed upon between user and supplier

Note 1: Mean is determined from measurements made at different spatial locations on the mask blank surface. Sample size and measurement

locations for determining range are to be agreed upon between user and supplier.

Note 2: Reflectivity at 6 degrees angle of incidence with respect to the normal to the absorber surface at the mean median reflected wavelength

specified in Table 4 and integrated over the bandwidth equal to the FWHM of the reflectivity versus EUV wavelength.

Note 3: Cleaning solutions to be agreed upon between user and supplier.

Note 4: ≥ 1 mJ/cm

/pulse in a bandwidth that equals 2% of the nominal wavelength full width at half maximum (FWHM).

Table 10 Optical Properties of Buffer Layer and Multilayer Stack

Minimum multilayer stack reflectivity at 150 < λ< 257 nm

(See Note 2.)

55%

Mean buffer layer reflectivity at 190<λ<257 nm (See Notes

1 and 2.)

Agreed upon between user and supplier

Uniformity of buffer layer reflectivity (absolute) (See Note

1.)

Agreed upon between user and supplier

Note 1: Mean is determined from measurements made at different spatial locations on the buffer layer or multilayer stack surface. Sample size

and measurement locations for determining range are to be agreed upon between user and supplier.

Note 2: λ is the inspection wavelength. Reflectivity is specified for < 1% fractional bandwidth at normal incidence

Table 11 Optical Properties of Absorber Stack Surface

Class Mean absorber stack reflectivity at

190<

<257 nm (See Notes 1 and 2.)

Uniformity of reflectivity (absolute)

(See Notes 1 and 2.)

A 5% ± 2%

B 10% ± 1.5%

C 15% ± 1.5%

D 20% ± 1.5%

Note 1: Mean is determined from measurements made at different spatial locations on the absorber stack surface. Sample size and measurement

locations for determining range are to be agreed upon between user and supplier.

Note 2: λ is the inspection wavelength. Reflectivity is specified for < 1% fractional bandwidth and at normal incidence.

Table 12 Properties of the Conductive Layer on the Back Side of the Mask Substrate

Conductive layer properties Requirement

Thickness Agreed upon between user and supplier

Stress Agreed upon between user and supplier

Mechanical durability Agreed upon between user and supplier

Table 13 Defect Requirements for Multilayer Stack

Class PSL equivalent size range

(nm) (See Note 1.)

Maximum defect count

A > 25 0

B > 30 0

C > 40 0

D (Test) > 60 Agreed upon between user and supplier

E (Test) > 90 Agreed upon between user and supplier

Note 1: PSL equivalent size means the detected defect appears to be the same size as a polystyrene latex sphere examined under the same

inspection conditions. Defect count for defects with size smaller than that shown is not specified.