semi合集-English.pdf - 第5805页
SEMI P23-0200 © SEMI 1993 , 2000 28 1/ 2 1/ 2 1/ 2 1/ 2 1 / 2 1 / 2 1 / 2 1 / 2 1 / 2 1 / 2 1 / 2 1 / 2 ( Y a x is ) ( Y a x is ) (Y ax i s ) (Y ax i s ) ( Y a x is ) (Y ax i s ) 1/ 2 1/2 1/ 2 1/2 1/ 2 1/2 1/ 2 1/ 2 1/2 …
SEMI P23-0200 © SEMI 1993, 200027
50 um
50 um
Detail
1 um
1 um
A
5.5
14.0
1.5
12.5
2.0
2.0
1.5
7.0
3.5
E
F
C
D
B
A
; Film Pattern
; Defect Position
Figure 22
Sub Cell
Contact Hole Pattern
SEMI P23-0200 © SEMI 1993, 2000 28
1/2
1/2
1/2 1/2
1
/
2
1
/
2
1
/
2
1
/
2
1
/
2
1
/
2
1
/
2
1
/
2
(Y axis)
(Y axis)
(Y axis) (Y axis)
(Y axis)
(Y axis)
1/2
1/2 1/2 1/2
1/2
1/2
1/2
1/2
1/2 1/2
S1
S2
S1
S2
S2
S2
S
2
S1
S1
Y
Y
S2
S1
S
2
S2
S
2
S1
S1
d
d
c
c
R. C.R. C.
A
I
B
HG
D
FE
C
JLK
MO
Q
PN
Edge I ntrusi onDot Hol e Edge Ext ensi on
Corner I ntr usionCorner Extension
Edge I ntrusi onEdge Ext ensionEdge IntrusionEdge Ext ensi on
El ongat i on Tr uncat i on Mi spl acemen t Mi spl acemen t
Mi ssi n g Pat t er n
Over Size Under Size
DD
DD
DD
DD
S1, S2 = Defect Size
DD = Defect Design Size
, R. C. = Reference Chip Pattern (or Design Pattern)
Figure 23
Defect
(Wiring Pattern)
SEMI P23-0200 © SEMI 1993, 200029
(X / Y a x i s)(X/Y axis)
(Y axis)
(Y axis)
(Y axis) (Y axis)
(Y axis)
1/2
1/2
1/2
1/2
1/2
1/2
1/2
1/2
1/2
1/2
S1
S2
S1
S2
S2
S2
S2
S1
S1
Y
Y
Y
S2
S1
S
1
d
d
c
c
R. C.
a
b
a
b
DD
DD
A
I
B
HG
D
FE
C
JLK
MN
Edge IntrusionDot H ol e E dge Ex t en si on
Corner I nt rusionCorner Extension
Elongat i on Truncat ion Misplacement Misplacement
Mi ssi ng Pat t er n
Over Si ze Under Si ze
Mi spl acement
S1, S2 = Defect Size
DD = Defect Design Size
, R. C. = Reference Chip Pattern (or Design Pattern)
Figure 24
Defect
(Contact Hole Pattern)