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SEMI P26-0703 © SEMI 1996, 2003 2 5.6.5 Film thickn ess after post-exposure b ake. 5.7 Development 5.7.1 Type of developer; com mercial name and chemical composition. 5.7.2 Concentration of de veloper ( weight % or molar…

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SEMI P26-0703 © SEMI 1996, 2003 1
SEMI P26-0703
PARAMETER CHECKLIST FOR PHOTORESIST SENSITIVITY
MEASUREMENT
This checklist was technically approved by the Global Micropatterning Committee and is the direct
responsibility of the Japanese Micropatterning Committee. Current edition approved by the Japanese
Regional Standards Committee on April 28, 2003. Initially available at www.semi.org June 2003; to be
published July 2003. Originally published in 1996.
1 Purpose
1.1 This checklist identifies the parameters for the
measurement of photoresist sensitivity in order to avoid
the variations between the supplier and users of
photoresist.
2 Scope
2.1 The resists for which this guideline is intended are
positive photoresist.
2.2 In discussions between the supplier and the user of
the resists, quantitative values should be provided for
each parameter.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Referenced Standards
3.1 SEMI Standard
SEMI P27 — Parameter Checklist for Resist Thickness
Measurement on a Substrate
3.2 ASTM
1
ASTM F1059 — Practice for Calculating the Contrast
and Threshold Sensitivity of a Positive Photoresist
NOTICE: Unless otherwise indicated, all documents
cited shall be the latest published versions.
4 Terminology
4.1 Definitions
4.1.1 E
op
(optimum energy) — the exposure energy
where the mask dimensions can be reproduced
faithfully.
1 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohocken, Pennsylvania 19428-2959, USA.
Telephone: 610.832.9585, Fax: 610.832.9555, Website:
www.astm.org
4.1.2 E
th
(threshold energy) — the exposure energy
where the remained thickness ratio becomes zero on the
sensitivity curve.
5 Parameters
5.1 Substrate — Silicon wafer
5.2 Pre-Treatment of Substrate
5.2.1 Removal of native oxide on silicon wafer is
recommended.
5.2.2 Describe the process when the surface of silicon
wafer has been treated with HMDS.
5.3 Resist
5.3.1 Trade-name of photoresist.
5.3.2 Film thickness after prebake. (Recommended
thickness is 1.0–1.2 µ m.)
5.4 Prebake Condition
5.4.1 Type of equipment for prebake; contact or
proximity-bake.
5.4.2 Measuring position of the temperature in baking
equipment and equipment for temperature measuring.
5.4.3 Baking time (s).
5.4.4 Program sequence.
5.5 Exposure
5.5.1 Type of exposure machine; stepper or mirror
projection.
5.5.2 Wavelength and half width (nm).
5.5.3 Light intensity of the exposed surface (mW/cm
2
).
5.5.4 Numerical Aperture and sigma value.
5.6 Post-Exposure Bake (if performed)
5.6.1 Type of equipment for post-exposure bake;
contact or proximity-bake.
5.6.2 Measuring position of the temperature in baking
equipment and equipment for temperature measuring.
5.6.3 Baking time (s).
5.6.4 Program sequence.
SEMI P26-0703 © SEMI 1996, 2003 2
5.6.5 Film thickness after post-exposure bake.
5.7 Development
5.7.1 Type of developer; commercial name and
chemical composition.
5.7.2 Concentration of developer (weight % or molar
%).
5.7.3 Dilution factor.
5.7.4 Method; Spray (nozzle type, rotation speed, flow
rate of developer), Puddle (program of sequence).
5.7.5 Temperature of developer, room temperature.
5.7.6 Development time (s).
5.8 Postbake
5.8.1 Type of equipment for postbake; contact or
proximity-bake.
5.8.2 Measuring position of the temperature in baking
equipment and equipment for temperature measuring.
5.8.3 Time (s).
5.8.4 Program sequence.
5.9 Measuring Equipment
5.9.1 Specify the measurement system for the film
thickness measurement.
5.9.2 Specify the measurement system for the pattern
width measurement.
5.10 Other — Line-width of pattern in the reticle
affects to E
op
. The use of reticle with the width
accuracy of ± 5/100 µ m to the pattern, or co-share of
reticle for the crosscheck is recommended for the
purpose of this guideline.
NOTICE: SEMI makes no warranties or
representations as to the suitability of the standards set
forth herein for any particular application. The
determination of the suitability of the standard is solely
the responsibility of the user. Users are cautioned to
refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature
respecting any materials mentioned herein. These
standards are subject to change without notice.
The user’s attention is called to the possibility that
compliance with this standard may require use of
copyrighted material or of an invention covered by
patent rights. By publication of this standard, SEMI
takes no position respecting the validity of any patent
rights or copyrights asserted in connection with any
item mentioned in this standard. Users of this standard
are expressly advised that determination of any such
patent rights or copyrights, and the risk of infringement
of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI P27-96 © SEMI 1996, 2003 1
SEMI P27-96 (Reapproved 0703)
PARAMETER CHECKLIST FOR RESIST THICKNESS MEASUREMENT
ON A SUBSTRATE
This checklist was technically approved by the Global Micropatterning Committee and is the direct
responsibility of the Japanese Micropatterning Committee. Current edition approved by the Japanese
Regional Standards Committee on April 28, 2003. Initially available at www.semi.org June 2003; to be
published July 2003. Originally published in 1996.
1 Purpose
1.1 This checklist identifies the parameters for the
thickness measurement of single layer resist on a
substrate. Several methods are known for the thickness
measurement of thin films, among them two methods
are widely used for the thickness measurement of resist
films.
1.2 They are the surface profilemeters which use
mechanical contact method to detect the topology of a
surface, and the light interference method which can be
used only for transparent films.
1.3 The contacting method has more accuracy than
light interference method, but the precision of the
measurement is limited. The light interference method
shows much more precision than the other but the
results depend on measuring conditions.
2 Scope
2.1 This guideline describes on the parameters for the
thickness measurement of single layer resist in
lithography process.
2.2 For example, pre-expose resist thickness
measurement on a bare silicon wafer for the QC of an
optical resist, or the resist thickness measurement of
partially exposed and fully exposed films after
development for the determination of a characteristic
curve of a resist.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Referenced Standards
3.1 ASTM Standard
1
ASTM F804 — Standard Practice for Producing Spin
Coating Resist Curves, 7.4 Thickness Measuring
Instrument
NOTICE: Unless otherwise indicated, all documents
cited shall be the latest published versions.
4 Parameters for Contact Type Measuring
Instruments (Surface Profilometer)
1. Name of the instrument used for the measurement
2. Pressure of the stylus
3. Radius of curvature of the stylus tip
4. Type of substrate
5. The method of making a scratch on the surface of
the resist
6. Temperature and relative humidity of the room
NOTE 1: The stylus pressure should be so adjusted that it
does not leave a visible indented track mark on the resist
surface at × 50 optical microscope magnification.
5 Parameters for Light Interference Thickness
Measurement Apparatus
1. Name of the apparatus used for the measurement
2. Refractive index or Cauchy indexes of the resist
used as the parameter of the measurement
n =
A
+
B
Y
2
+
C
Y
4
where
A, B, C = Cauchy indexes
n = refractive index
Y = wave length
1 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohocken, Pennsylvania 19428-2959, USA.
Telephone: 610.832.9585, Fax: 610.832.9555, Website:
www.astm.org