semi合集-English.pdf - 第5502页

SEMI P2-0298 © SE MI 1988, 1998 2 Table 1 Sust aining Test s — Resist Coat ing Characte ristic Measur ed Property Varia ble Fixe d Conditions Test Methods Thickness c u rve Film thick ness Spin speed Viscosity /Solids AS…

100%1 / 7923
SEMI P9-0298 © SEMI 1988, 19981
SEMI P9-0298
GUIDELINE FOR FUNCTIONAL TESTING OF MICROELECTRONIC
RESISTS
1 Purpose
The purpose of this guideline is to provide a baseline
program of test procedures needed to functionally test
liquid-developed resists, resist developers, and rinses
for microelectronic applications. It can also be used as a
guide to evaluate process modifications to such
systems. This guideline is intended to be applicable for
photo, DUV, x-ray, and electron beam processes.
2 Background
Release of the information in this document was
approved by the SEMI Photolithographic Chemicals
Committee (Resist Committee) in May 1987. This
committee plans to complete and revise the guideline as
appropriate. Comments will be welcomed.
3 Scope
Virtually all lithographic fabrication processes vary in
some way from location to location, even for the same
type of resist. Consequently, it is impossible to provide
a stringent evaluation program acceptable to most users.
It is, therefore, the aim of this guideline to provide a
program of tests and methods that allows variable, but
controlled, process differences. In order to maintain a
proper baseline control for each process, all tests should
be run relative to some internal standard product whose
functional characteristics are known and characterized.
It is understood that each product is to be run at its own
preferred or recommended conditions and that different
products maybe evaluated under different conditions. It
should also be understood that some properties,
variables, or conditions, such as normality, are specific
to resist type, such as positive photoresist, and are to be
used only where applicable. Further, since this guide is
directed to functional testing, it is assumed that any
products to be evaluated have passed all relevant
chemical and physical testing before such functional
testing.
4 Priorities
This guideline has been divided into two separate
groups. The first group, called “Sustaining Tests,”
includes tests that are necessary for timely adjustments
to coating and exposure conditions in order to maintain
consistent image dimensions (Tables 1–3). The second
group, called “Extended Testing,” includes tests that are
required for full evaluation of the resist system (Tables
4–6). These tests may, or may not, be necessary for
evaluation of each lot of product, depending on the
individual requirements of the user.
5 Referenced Documents
5.1 ASTM Standards
1
F 518 — Practice for Determining Effective Adhesion
for Photoresist of Hard-Surface Photomask Blanks and
Semiconductor Wafers during Etching
F 527 — Practice for Adjusting Photoresist Exposure
Time
F 528 — Method for Measurement of Common-
Emmiter D-C Current Gain of Junction Transistors
F 804 — Practice for Producing Spin Coating Resist
Thickness Curves
F 863 — Practice for Detection of Defects in Spin-
coated Resist
F 890 — Practice for Determining Pinhole Density in
Photoresist Films Used in Microelectonics Device
Processsing
F 1059 — Standard Practice for Calculating the
Contrast and Threshold Sensitivity of a Positive
Photoresist
6 Terminology
6.1 test method — A definitive procedure for the
identification, measurement, and evaluation of one or
more qualities, characteristics, or properties of a
material, product, system, or service that produces a test
result.
1 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohoken, PA 19428-2959
SEMI P2-0298 © SEMI 1988, 1998 2
Table 1 Sustaining Tests — Resist Coating
Characteristic Measured Property Variable Fixed Conditions Test Methods
Thickness curve Film thickness Spin speed Viscosity/Solids ASTM F 804
Substrate
Measurement method
Softbake
Coating program
Acceleration
Dispense volume
Exhaust rate
Environment
Film uniformity Film thickness Across As above
Wafer to wafer
Striations Fringes As above
Film thickness variation Before and after developing
Cleanliness Particles In/On coating Filtration ASTM F 863
On substrate after removal Housekeeping
External sources
Defect size
Test method
Film integrity Pin holes Film thickness As above ASTM F 890
Table 2 Sustaining Tests — Characteristic Information
Characteristic Measured Property Variable Fixed Conditions Test Methods
Threshold energy Film thickness Exposure energy Measurement method
Calculation method
Exposure conditions
Developer type
Developer normality
Development time
Rinse type(s)
Agitation/Spray
Softbake
Environment
Development rate Film thickness Exposure energy As above
Development time
Contrast Film thickness Exposure energy As above ASTM F 1059
Film thickness
Resist loss Film thickness Development conditions As above
Scum Resist residue Environment As above
SEMI P9-0298 © SEMI 1988, 19983
Table 3 Sustaining Tests — Imaging
Characteristic Measured Property Variable Fixed Conditions Test Methods
Focus Resolution Focus Substrate
Exposure energy Film thickness
Exposure method
Exposure conditions
Measurement method
Developer type
Developer normality
Development time
Development method
Rinse type(s)
Agitation/Spray
Development time
Softbake
Environment
Exposure requirements Line width Exposure energy As above ASTM F 527
Image size ASTM F 528
Table 4 Extended Testing — Resist Coating
Characteristic Measured Property Variable Fixed Conditions Test Methods
Planarization Film thickness variation Film thickness Coating method
Topography Spin speed
Softbake
Environment
Orientation of topography
Table 5 Extended Testing — Imaging
Characteristic Measured Property Variable Fixed Conditions Test Methods
Focus latitude Line width Exposure energy Substrate
Film thickness variation Focus Film thickness
Resolution Exposure method
Exposure conditions
Line width
Developer type
Developer normality
Development time
Development method
Rinse type(s)
Agitation/Spray
Softbake
Environment
Exposure latitude As above Exposure energy As above
Development latitude As above Development normality Line width
Contrast Development time Exposure conditions ASTM F 1059
Threshold energy Development temperature Developer type
Exposure energy Development method