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SEMI M18-0704 © SEMI 1990, 2004 22 ITEM VALUE STANDARD REFERENCE A STANDARD TEST METHODS IS IN SEMI IS REQ'D B SEMI JEIDA ASTM SEMI JIS JEIDA DIN 3.4 Boron Concentration in Heavily Doped n-type Si NO NO MF1528 4. ST…

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SEMI M18-0704 © SEMI 1990, 2004 21
Backside Metal [ ]
Contamination
≤ [ ] (/cm
2
) 100278
Test Method [ ] TXRF, [ ] AAS, [ ] ICP-MS
Backside Metal [ ]
Contamination
≤ [ ] (/cm
2
) 100279
Test Method [ ] TXRF, [ ] AAS, [ ] ICP-MS
Backside Metal [ ]
Contamination
≤ [ ] (/cm
2
) 100280
Test Method [ ] TXRF, [ ] AAS, [ ] ICP-MS
1. Individual value is not required if wafer is specified according to SEMI M1. _____.
2. Flatness Acronyms are determined from the Flatness Decision Tree in SEMI M1, Appendix 1.
3. Individual value is not required if wafer is specified according to SEMI M1, Table 1.
4. Individual value is not required if wafer is specified according to Table 1 of SEMI M2 or SEMI M11.
5. Haze, Teracing, Surface micro-roughness, Nanotopography, and other attributes may be discussed between supplier and user.
6. Support-related backside defects may be discussed between supplier and user
7. Surface boron depletion, dissolved hydrogen in the case of hydrogen annealed wafer, Post-annealed oxygen, and Silicon nitride precipitates
and defects in the case of nitrogen-doped silicon may be discussed between supplier and user.
8. To be specified or discussed between users and suppliers.
9. Thinner SOI is to be discussed between users and suppliers.
10. It is specified by a distance from the FQA boundary to the periphery of a base wafer of nominal dimensions. It is not a distance from an edge
of an SOI layer.
Table 1 Industry Standard References
Polished Wafer
ITEM VALUE STANDARD
REFERENCE
A
STANDARD TEST METHODS
IS IN
SEMI
IS
REQ'D
B
SEMI JEIDA ASTM SEMI JIS JEIDA DIN
1. GENERAL CHARACTERISTICS
1.1 Growth Method NO YES M1 Note 5 MF26
1.2 Crystal Orientation NO YES MF42 18 50433/1
50433/2
50433/3
1.3 Conductivity Type NO YES M1 Note 5 H 607 50432
1.4 Dopant NO YES M1 Note 5 50438/3
1.5 Nominal Edge Exclusion Distance for
Fixed Quality Area
NO NO M1 Fig 1
2. ELECTRICAL CHARACTERISTICS
2.1 Resistivity NO YES M1 Sec 9 MF84,
MF673
H 602 18
H 612
50431,
50447
2.2 Radial Resistivity Variation (RRG) NO NO M1 Sec 9 MF81 18 50435
2.3 Resistivity Striations NO NO MF154,
MF525
2.4 Minority Carrier Lifetime NO NO MF28,
MF391,
MF1388,
FM1535
H 604 53 50440
3. CHEMICAL CHARACTERISTICS
3.1 Oxygen Concentration NO NO MF1188,
MF1366,
MF1619
61 50438/1
3.2 Radial Oxygen Variation NO NO MF951
3.3 Carbon Concentration NO NO MF1391 56 50438/2
SEMI M18-0704 © SEMI 1990, 2004 22
ITEM VALUE STANDARD
REFERENCE
A
STANDARD TEST METHODS
IS IN
SEMI
IS
REQ'D
B
SEMI JEIDA ASTM SEMI JIS JEIDA DIN
3.4 Boron Concentration in Heavily
Doped n-type Si
NO NO MF1528
4. STRUCTURAL CHARACTERISTICS
4.1 Dislocation Etch Pit Density NO NO F 47 H 609 50434
4.2 Slip NO NO F 47,
F 416
H 609 50434
4.3 Lineage NO NO F 47 H 609 50434
4.4 Twin NO NO F 47 H 609 50434
4.5 Swirl NO NO F 416 H 614 24
4.6 Shallow Pits NO NO F 416 MF1049 H 614 24
4.7 Oxidation Induced Stacking Faults
(OSF)
NO NO F 416 MF1727,
MF1809,
MF1810
4.8 Oxide Precipitates (BMD)
Interstitial Oxygen Reduction (∆O
i
)
NO
NO
NO
NO
MF1239,
MF1809,
MF1810
5. WAFER PREPARATION CHARACTERISTICS
5.1 Wafer ID Marking YES NO M12, M13
5.2 Front Surface Thin Film(s) Applied NO NO
5.3 Denuded Zone NO NO
5.4 Extrinsic Gettering Treatment NO NO
5.5 Backseal NO NO
5.6 Annealing NO NO
6. MECHANICAL CHARACTERISTICS
6.1 Diameter YES YES
C
M1 Sec 9 27 F 613 50441/4
6.2 Primary Flat Length/Diameter Notch
Dimensions
YES YES
C
M1 27 MF671,
MF1152
50441/4
6.3 Primary Flat/Notch Orientation YES YES
C
M1 Sec 9 27 MF847
6.4 Secondary Flat Length YES YES
C
M1 Sec 9 MF671 50441/4
6.5 Secondary Flat Location YES YES
C
M1 Sec 9 MF847
6.6 Edge Profile YES YES
C
M1 Sec 5 MF928 50441/2
6.7 Thickness YES YES
C
M1 Sec 9 27 MF533,
MF1530
H 611 50441/1
6.8 Thickness Variation (TTV) YES NO M1 Sec 9 27 MF533,
MF657,
MF1530
H 611 50441/1
6.9 Surface Orientation YES YES M1 Sec 9 27 MF26 18 50433
6.10 Bow YES NO M1 Sec 9 MF534 H 611
6.11 Warp YES NO M1 Sec 9 MF657,
MF1390
6.12 Sori NO NO M1 Sec 9 MF1451 43
6.13 Flatness NO NO M1 Sec 9 MF1530 50441/3
7. FRONT SURFACE CHEMISTRY
7.1 Surface Metal Contamination
Sodium NO NO MF1617
Aluminum NO NO MF1617
Potassium NO NO M33 MF1617
SEMI M18-0704 © SEMI 1990, 2004 23
ITEM VALUE STANDARD
REFERENCE
A
STANDARD TEST METHODS
IS IN
SEMI
IS
REQ'D
B
SEMI JEIDA ASTM SEMI JIS JEIDA DIN
Chromium NO NO M33 MF1526
Iron NO NO M33 MF1526
Nickel NO NO M33 MF1526
Copper NO NO M33 MF1526
Zinc NO NO M33 MF1526
7.2 Surface Organics MF1982
8. FRONT SURFACE VISUAL INSPECTION CHARACTERISTICS
D
8.1 Scratches YES NO M1 Table 1 26 MF523 H 614
8.2 Pits YES NO M1 Table 1 26 MF523 H 614 24
8.3 Haze YES NO M1 Table 1 26 MF523 H 614 24
8.4 Light Scattering Defects(Particulate
Contamination)
YES NO M1 Table 1 26 MF1620
MF523
H 614 24
8.5 Contamination/Area YES NO M1 Table 1 26 MF523 H 614 24
8.6 Edge Chips YES NO M1 Table 1 26 MF523 H 614 24
8.7 Edge Cracks YES NO M1 Table 1 26 MF523 H 614 24
8.8 Cracks, Crow's Feet YES NO M1 Table 1 26 MF523 H 614 24
8.9 Craters YES NO M1 Table 1 26 MF523 H 614 24
8.10 Dimples YES NO M1 Table 1 26 MF523 H 614 24
8.11 Grooves YES NO M1 Table 1 26 MF523 H 614 24
8.12 Mounds YES NO M1 Table 1 26 MF523 H 614 24
8.13 Orange Peel YES NO M1 Table 1 26 MF523 H 614 24
8.14 Saw Marks YES NO M1 Table 1 26 MF523 H 614 24
8.15 Dopant Striation Rings NO NO 26 MF523 H 614 24
8.16 Stains NO NO 26 MF523 H 614 24
9. BACK SURFACE VISUAL INSPECTION CHARACTERISTICS
9.1 Edge Chips YES NO M1 Table 1 MF523
9.2 Cracks, Crow's Feet YES NO M1 Table 1 MF523
9.3 Contamination/Area YES NO M1 Table 1 MF523
9.4 Saw Marks YES NO M1 Table 1 MF523
9.5 Stains NO NO
9.6 Roughness NO NO
9.7 Brightness NO NO
10. OTHER CHARACTERISTICS
10.1 Bulk defects by X-ray topography 50443/1