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SEMI M41-1101 © SE MI 2000, 2001 4 Parameters (Units) V alue AS TM Test Method or Meas ureme nt Procedure Accepta nce Surface Roughn ess (nm) No te A, C AFM (SEMI M34) Note A, C Carrier Lifetime (µsec) Note C µ-P CD Meth…

SEMI M41-1101 © SEMI2000, 20013

5.1.3 Buried oxide thickness and thickness tolerances

5.1.4 Top silicon film thickness and thickness

tolerances

5.1.5 Warp limits

5.1.6 Top silicon film OSF defect limits

5.1.7 Top silicon film carrier life time limits

5.1.8 Buried oxide defect limits

5.1.9 Edge profile of the top silicon film and non-SOI

edge area

5.1.10 Rotation alignment between top silicon film and

the base silicon

5.1.11 Position of the bonding interface

5.1.12 Methods of test and measurements (see

Sections 8 and 9)

5.1.13 Lot acceptance procedures (see Section 7)

5.1.14 Certification (if required)

5.1.15 Packing and marking (see Section 10)

NOTE 2: Verification test procedures of certification of these

items shall be agreed upon between the users and the supplier

(see Sections 8 and 9).

6 Requirements

6.1 The complete specifications for Overall Wafer, Top

Silicon Film, Buried Oxide (BOX) and Base Silicon

Wafer are listed in Tables 1 to 5.

Table 1 Silicon-on-Insulator (SOI) Specifications for Low Voltage (45–60V) Power Device (1)

Parameters (Units) Value ASTM Test Method or

Measurement Procedure

Acceptance

Wafer(Overall)

Diameter (mm) 125, 150, 200 F613-93 Note A

Thickness (µm) (Value of regular silicon

wafer) + (SOI thickness) +

(Box thickness)

F533-96, F1530-94 Note A

Total Thickness Variation (µm) Note C F1530-94 Note C

LTV (µm) Note C F1530-94 Note C

Warp (µm) ≤ 100 (Note B, C, F) F1390-92 Note C, or Certified by

Wafer Manufactures

Non-SOI Edge Area (mm) ≤ 3 (Note C) Optical Metrology Note C, or Certified by

Wafer Manufactures

Edge Profile/Edge Profile

Surface Finish

Note C F928-93 Note C, or Certified by

Wafer Manufactures

Top Silicon Film

Thickness (µm) 2–12 Note D

(F399-88)

Note C, E,

Must be measured on each

wafer

Surface Orientation Note C X-ray Diffraction

(F26-87a)

Note C, or Certified by

Wafer Manufactures

Resistivity (ohm-cm) Note C F43-93, F84-93,

F1527-94

Note C, or Certified by

Wafer Manufactures

Conductivity Type Note C F42-93 Note C, or Certified by

Wafer Manufactures

Oxygen Concentration (/cm

) Note C F1188-93a,

F1619-95

Note C, or Certified by

Wafer Manufactures

Carbon Concentration (/cm

) Note C F1391-93 Note C, or Certified by

Wafer Manufactures

Surface Cleanliness: Metal

Contamination (/cm

)

Note A, C AAS, ICP-MS,

TXRF (F1526-95),

SIMS (F1617-98)

Note A, C

Surface Cleanliness: Particle

Density (/wafer)

Note A, C Light Scattering

Tomography (F1620-96)

(SEMI M34)

Note A, C

SEMI M41-1101 © SEMI 2000, 2001 4

Parameters (Units) Value ASTM Test Method or

Measurement Procedure

Acceptance

Surface Roughness (nm) Note A, C AFM

(SEMI M34)

Note A, C

Carrier Lifetime (µsec) Note C µ-PCD Method

(F1535-94)

Note C

Crystalline Alignment of Top

Silicon Film to Base Wafer (°)

Note C X-ray diffraction

(F847-94)

Note C

Surface Feature

(Haze, Scratch, etc)

None F154-94, F523-93,

F1726-97

Must be measured on each

wafer

OSF Density (/cm

) Note C Optical Metrology

(F1727-97)

Note C, or Certified by

Wafer Manufactures

Buried Oxide (BOX)

Thickness (µm) 0.5–2 Ellipsometry (F576-95)

Reflective Spectroscopy

(SEMI M34)

Tolerance is ± 5%; Note C,

or Certified by Wafer

Manufactures

Location of Bonded Interface Lower Surface

(Note C)

TEM Certified by Wafer

Manufactures

Void Density (/cm

) None Scanning Acoustic

Tomography, Optical Defect

Inspection

Note C

Oxide Defect Density (/cm

) Note C I-V on Capacitor,

Cu Decoration

(SEMI M34)

Note C

Dielectric Breakdown Voltage

(V)

Note C I-V on Capacitor Note C

Interface States (/cm

) Note C, H C-V Technique Note C

Fixed Charge Density (/cm

) Note C, H C-V Technique

(F1153-92)

Note C

Bonding Strength (kg/cm

) Note C Tensile Strength Note C, or Certified by

Wafer Manufactures

Base Silicon Wafer

Crystalline Orientation Note C F26-87a Note C

Resistivity (ohm-cm) Note C F43-93, F84-93,

F1527-94

Note C

Conductivity Type Note C F42-93 Note C

Fiducial Axis Orientation

(Flat/Notch)

Note C F671-90, F1152-93 Note C

To-be-bonded Surface

Cleanliness: Metals (/cm

)

Note C AAS, ICP-MS,

XRF (F1526-95),

SIMS (F1617-98)

Note C

Back Surface Finish Note C Optical Metrology Note C

SEMI M41-1101 © SEMI2000, 20015

Table 2 Silicon-on-Insulator (SOI) Specifications for Low Voltage (45–60V) Power Device (2)

Parameters (Units) Value ASTM Test Method or

Measurement Procedure

Acceptance

Wafer(Overall)

Diameter (mm) 125, 150, 200 F613-93 Note A

Thickness (µm) Note A F533-96, F1530-94 Note A

Total Thickness Variation (µm) Note C F1530-94 Note C

LTV (µm) Note C F1530-94 Note C

Warp (µm)

≤ 50 (Note B, C, F)

F1390-92 Note C, or Certified by

Wafer Manufactures

Non-SOI Edge Area (mm)

≤ 3 (Note C)

Optical Metrology Note C, or Certified by

Wafer Manufactures

Edge Profile / Edge Profile

Surface Finish

Note C F928-93 Note C, or Certified by

Wafer Manufactures

Top Silicon Film

Thickness (µm) 0.1–0.5 Note D Note C, E,

Must be measured on each

wafer

Surface Orientation Note C X-ray Diffraction

(F26-87a)

Note C, or Certified by

Wafer Manufactures

Resistivity (ohm-cm) Note C F43-93, F84-93,

F1527-94

Note C, or Certified by

Wafer Manufactures

Conductivity Type Note C F42-93 Note C, or Certified by

Wafer Manufactures

Oxygen Concentration (/cm

) Note C F1188-93a,

F1619-95

Note C, or Certified by

Wafer Manufactures

Carbon Concentration (/cm

) Note C F1391-93 Note C, or Certified by

Wafer Manufactures

Surface Cleanliness: Metal

Contamination (/cm

)

Note A, C AAS, ICP-MS,

TXRF (F1526-95),

SIMS (F1617-98)

Note A, C

Surface Cleanliness: Particle

Density (/wafer)

Note A, C Light Scattering

Tomography (F1620-96)

(SEMI M34)

Note A, C

Surface Roughness (nm) Note A, C AFM

(SEMI M34)

Note A, C

Carrier Lifetime (µsec) Note C µ-PCD Method

(F1535-94)

Note C

Crystalline Alignment of Top

Silicon Film to Base Wafer (°)

Note C X-ray Diffraction

(F847-94)

Note C

Surface Feature

(Haze, Scratch, etc)

None F154-94, F523-93, F1726-97

(SEMI M34)

Must be measured on each

wafer

Buried Oxide (BOX)

Thickness (µm) 0.4–1.0 Ellipsometry (F576-95)

Reflective Spectroscopy

(SEMI M34)

Tolerance is ± 5%;

Note C, or Certified by

Wafer Manufactures

Location of Bonded Interface Lower Surface

(Note C)

TEM Certified by Wafer

Manufactures

Void Density (/cm

) None Scanning Acoustic

Tomography, Optical Defect

Inspection

Note C