semi合集-English.pdf - 第5780页
SEMI P23-0200 © SEMI 1993 , 2000 3 Dimens ion on Mask Mask Name 5.00 mi cron 5000 3.00 mi cron 3000 2.50 mi cron 2500 2.00 m icron 2000 1.50 mi cron 1500 1.00 mi cron 1000 0.80 mi cron 800 0.50 mi cron 500 8.4.1 The abov…
SEMI P23-0200 © SEMI 1993, 2000 2
5.3 There are two types of patterns: Wiring and
Contact Hole pattern.
5.4 In one mask, there will be one type of pattern,
either Wiring or Contact Hole.
5.5 One defect chip will be placed in the center of the
mask.
5.6 Eight reference chips (non-defective) will be
placed at 25,000 micron intervals to make sure that
inspection can occur even if the mask is set in the
inspection equipment in different directions (e.g., 0º,
90º, 180º, 270º).
5.7 Mask Naming
5.7.1 Wiring Pattern Mask is “SEMI STANDARD
P23-0200-1500W”.
5.7.2 Contact Hole Pattern Mask is ”SEMI
STANDARD P23-0200-1500C”.
5.7.3 “P23-0200” is the registered number of this
guideline.
5.7.4 “1500” expressed in nanometers, is the
photomask pattern design rule. The following
explanations in this guideline are based on a 1,500 nm
(1.50 micron) design rule.
5.7.5 The mask naming should be written in characters
which can be confirmed by the naked eye, and should
be displayed in a place recognized by either the
manufacturer or user of the mask.
5.8 Four light intensity adjustment patterns will be
placed at 12,500 micron intervals from the center of the
mask.
5.9 It is feasible to place stepper alignment marks and
other patterns in such a way as not to effect the mask
pattern described above.
6 Chip
See Figure 2 for illustration.
6.1 One chip of wiring patterns will be made up of 17
types of defects, each at 20 different defect sizes for a
total of 340 cells.
6.2 One chip of contact hole patterns will be made up
of 14 types of defects, each at 20 different defect sizes
for a total of 280 cells.
6.3 Place defects changing types along the X-axis.
6.3.1 Display the defect type from the left side of the
chip, toward the right, in capital English letters.
6.3.1.1 Wiring patterns are listed from A to Q.
6.3.1.2 Contact Hole patters are listed from A to N.
6.4 Place defects changing size along the Y-axis.
6.4.1 Place the defects, from top to bottom, in range of
size from 0.05 microns to 1.00 microns at 0.05 micron
intervals.
NOTE 2: Display all sizes as they pertain to the mask (on the
mask).
7 Cell
7.1 One cell will be 250 microns square. (See Figure
3.)
7.2 Sub-cells will be placed 5 by 5 (Total=25).
7.3 Defects will be placed in the center of the cell (±
5.0 micron).
7.4 Cells will be broken up into 9 types, depending on
the content of the pattern and defect.
7.4.1 Seven types are used for Wiring Patterns. (See
Figures 4, 15 to 21.)
7.4.2 Two types are used for Contact Hole Patterns.
(See Figures 6 and 7.)
8 Sub-cell
8.1 One sub-cell is 50 microns square.
8.2 Place a pattern which shows the boundaries of the
cell at the sub-cell coordinates (x1,y1), (x5,y1), (x1,y5)
and (x5,y5). (See Figures 8 to 12.)
8.2.1 Figure 13 shows an example of these patterns
placed together.
8.2.2 The pattern placed at (x5,y1) should be a pattern
from which coordinates can be measured.
8.3 Place the defect type ID (cell coordinates) and the
abbreviated pattern for the defect type in sub-cell
coordinates (x1,y5). (See Figures 8 and 12.)
8.3.1 Defect type ID (cell coordinates) are written as
one capital English letter, representing the defect type
and a two-digit number representing defect size.
(Example: A01)
Character line width is set at 2.00 micron. (See Figure
14.)
8.3.2 The abbreviated pattern which denotes the defect
content should keep the defect shape and direction
consistent with the shape and direction of the program
defect in the design.
8.4 The recommended values for pattern dimensions
under the design rule (dimensions on mask) are as
follows:
SEMI P23-0200 © SEMI 1993, 20003
Dimension on Mask Mask Name
5.00 micron 5000
3.00 micron 3000
2.50 micron 2500
2.00 micron 2000
1.50 micron 1500
1.00 micron 1000
0.80 micron 800
0.50 micron 500
8.4.1 The above list of design rule dimensions are
recommended values, and it is feasible to use a different
size.
8.4.2 When changing the design rule, chip spacing
(25.0 mm) should not change.
8.5 For the Wiring Pattern Chip, place a pattern with
uniform sub-cell coordinates: (x2,y1), (x4,y1), (x1,y2),
(x2,y2), (x4,y2), (x5,y2), (x1,y4), (x2,y4), (x4,y4),
(x5,y4), (x2,y5), (x4,y5). (See Figure 4.)
8.5.1 Patterns in a sub-cell using the uniform Wiring
Pattern should be as follows:
Sub-cell Coordinates Pattern to Be Used
(x2,y1) & (x4,y5) Wiring Type A (Figure 15)
(x4,y1) & (x2,y5) Wiring Type B (Figure 16)
(x1,y4) & (x5,y2) Wiring Type A rotated 90º
(x1,y2) & (x5,y4) Wiring Type B rotated 90º
(x2,y2) Wiring Type C (Figure 17)
(x4,y2) Wiring Type D (Figure 18)
(x2,y4) Wiring Type E (Figure 19)
(x4,y4) Wiring Type F (Figure 20)
8.5.2 Uniform patterns are placed inside a 50 micron-
square sub-cell.
8.5.3 For patterns in the Wiring Pattern which change
depending on the defect type ID, the same patterns
should be placed, without borders, in sub-cell
coordinates (x3,y1), (x3,y2), (x1,y3), (x2,y3), (x3,y3),
(x4,y3), (x5,y3), (x3,y4) and (x3,y5).
8.5.4 Pattern content will change as follows,
depending on the defect type ID:
Defect Type ID Pattern to Be Used
A, B, C, D Wiring Type A (Figure 15)
G, H, K, L, Q Wiring Type C (Figure 17)
I, J Wiring Type D (Figure 18)
E, F Wiring Type E (Figure 19)
M, N Wiring Type F (Figure 20)
O, P Wiring Type G (Figure 21)
8.5.4.1 Adjust the pattern position so that the defect is
placed in the center of sub-cell coordinates (x3,y3).
There may be instances where the placement of the
uniform patterns and the defect-inserted patterns vary
slightly.
8.5.4.2 Figure 5 is an example of placement of a Type
A Wiring Pattern.
8.6 For Contact Hole Pattern Chips, contact hole
patterns should be placed at all sub-cells except
coordinates (x1,y1), (x5,y1), (x1,y5) and (x5,y5). (See
Figures 6 and 22.)
8.6.1 For misplacement defects, in order to be
evaluated as an isolated field, place just one contact
hole pattern in the center of sub-cell coordinates (x3,
y3) and only in cells where the contact hole pattern
defect type ID is “M”. (See Figure 7.)
8.6.2 Adjust the whole pattern for contact hole
patterns so that the defect is placed in the center of sub-
cell coordinates (x3,y3).
8.7 Use a common spacing for placement of wiring
patterns and contact hole patterns.
8.7.1 For placement of patterns in design rule 1.50
microns (on mask), use a spacing of 14.0 microns in the
X-direction and 7.0 microns in the Y-direction.
8.7.2 The values for spacing should change
accordingly with a change in the design rule.
9 Defect
See Figures 23 and 24 for illustration.
9.1 Defect Type
9.1.1 Dot
9.1.2 Hole
9.1.3 Edge Extension
0 degree
45 degree
arctan (1/2) = 26.565 degree
9.1.4 Edge Intrusion
0 degree
45 degree
arctan (1/2) = 26.565 degree
9.1.5 Corner Extension
9.1.6 Corner Intrusion
9.1.7 Over size
9.1.8 Under size
9.1.9 Elongation
9.1.10 Truncation
9.1.11 Misplacement
SEMI P23-0200 © SEMI 1993, 2000 4
9.1.12 Missing Pattern
9.2 Defect Design Method
9.2.1 Design the following defects, in squares, for
wiring patterns and contact hole patterns. For edge
defects on diagonal lines, use a pattern designed in a
square and rotated to the angle of the diagonal. (In this
case, the shape of the defect may change in the design
data.) For corner defects, design using the edge length
as a design dimension and not the diagonal.
9.2.1.1 Dot
9.2.1.2 Hole
9.2.1.3 Edge Extension
0 degree
45 degree
arctan (1/2) = 26.565 degree
9.2.1.4 Edge Intrusion
0 degree
45 degree
arctan (1/2) = 26.565 degree
9.2.1.5 Corner Extension
9.2.1.6 Corner Intrusion
9.2.2 The following defects change only in the pattern
size along the Y-direction.
9.2.2.1 Wiring Pattern Over Size
9.2.2.2 Wiring Pattern Under Size
9.2.3 The following defects change in pattern size
along both X and Y.
9.2.3.1 Contact Hole Pattern Over Size
9.2.3.2 Contact Hole Pattern Under size
9.2.4 The following defects change only in pattern
length along the Y-direction in both wiring and contact
hole patterns.
9.2.4.1 Elongation
9.2.4.2 Truncation
9.2.5 For the following defects, in both wiring and
contact hole patterns, move the right half of the pattern
in the Y-direction only to form a step.
9.2.5.1 Misplacement Defect with ID ”K”
9.2.6 In the following defects, the pattern shape and
size are the same, with one whole isolated pattern
moving only in the Y-direction.
9.2.6.1 Misplacement defects, in both wiring and
contact hole patterns, which have the defect ID “L”.
9.2.6.2 Misplacement defects, in contact hole patterns,
with the defect ID ”M”.
9.2.7 The following single isolated pattern is
completely destroyed in both wiring and contact hole
patterns.
9.2.7.1 Missing Pattern
9.3 Fabricating Position for Program Defect
9.3.1 Fabricate according to Figure detailed drawing.
10 Program Defect Size
10.1 According to SEMI P22, mainly, two values are
to be used in defining size of defects. However, for the
following reason, one value will be used to describe
program defect size on this SEMI Standard P23 mask.
10.1.1 Defects used in evaluation are all program
defects and mainly designed in square shape.
10.1.2 When describing the capabilities of mask defect
inspection systems, it has become typical to describe
defect size which one value.
10.2 Due to various reasons (influences) in mask
manufacturing, it is not always possible to form all
program defects with the shape and size described in
the design.
10.3 SEMI Standard mask defect size is defined as
follows. (See Figures 23 and 24.)
Follow SEMI P22 for the values used below (S1, S2, X,
Y, a, b, c, d).
10.3.1 Dot & Hole
10.3.1.1 Defect Size is S1 or S2, whichever is larger.
10.3.2 Edge Extension & Intrusion
10.3.2.1 Defect Size is S2.
10.3.3 Corner Extension
10.3.3.1 Defect Size is the difference between the
reference pattern S1[Reference] and the defect pattern
S1[Defect]
( | S1[Reference] - S1[Defect] | ).
10.3.4 Corner Intrusion
10.3.4.1 Wiring Pattern
10.3.4.1.1 Defect Size is the difference between the
reference pattern S1[Reference] and the defect pattern
S1[Defect]
( | S1[Reference] - S1[Defect] | ).