semi合集-English.pdf - 第5804页
SEMI P23-0200 © SEMI 1993 , 2000 27 50 u m 50 u m De t a i l 1 u m 1 u m A 5. 5 14. 0 1. 5 12. 5 2. 0 2. 0 1. 5 7. 0 3. 5 E F C D B A ; Film Pattern ; Defect Position Figure 22 Sub Cell Contact Hole Pattern
SEMI P23-0200 © SEMI 1993, 2000 26
50 um
50 um
Detail
1 um
1 um
9.7
14.0
0.675
4.857.0
<1.501>
1.35
<1.62>
7.0
( arctan 1/2 )
< 26.565 deg. >
1
0
.
8
4
5
4
.
8
1
O
P
; Film Pattern
; Defect Position
Figure 21
Sub Cell
Wiring (Type F)
SEMI P23-0200 © SEMI 1993, 200027
50 um
50 um
Detail
1 um
1 um
A
5.5
14.0
1.5
12.5
2.0
2.0
1.5
7.0
3.5
E
F
C
D
B
A
; Film Pattern
; Defect Position
Figure 22
Sub Cell
Contact Hole Pattern
SEMI P23-0200 © SEMI 1993, 2000 28
1/2
1/2
1/2 1/2
1
/
2
1
/
2
1
/
2
1
/
2
1
/
2
1
/
2
1
/
2
1
/
2
(Y axis)
(Y axis)
(Y axis) (Y axis)
(Y axis)
(Y axis)
1/2
1/2 1/2 1/2
1/2
1/2
1/2
1/2
1/2 1/2
S1
S2
S1
S2
S2
S2
S
2
S1
S1
Y
Y
S2
S1
S
2
S2
S
2
S1
S1
d
d
c
c
R. C.R. C.
A
I
B
HG
D
FE
C
JLK
MO
Q
PN
Edge I ntrusi onDot Hol e Edge Ext ensi on
Corner I ntr usionCorner Extension
Edge I ntrusi onEdge Ext ensionEdge IntrusionEdge Ext ensi on
El ongat i on Tr uncat i on Mi spl acemen t Mi spl acemen t
Mi ssi n g Pat t er n
Over Size Under Size
DD
DD
DD
DD
S1, S2 = Defect Size
DD = Defect Design Size
, R. C. = Reference Chip Pattern (or Design Pattern)
Figure 23
Defect
(Wiring Pattern)