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SEMI M4-1103 © SEMI 1978, 2003 5 9 Certification 9.1 Upon re quest of the purchaser in the cont ract or order, a manufact urer’s or suppl ier’s certifi cation that the material was manufacture d and tested in accordance …

SEMI M4-1103 © SEMI 1978, 2003 4

7.2.7 Surface Defects and Contamination — Determine

by methods agreed upon between user and supplier.

SEMI MF154 is a useful guide for defining a variety of

surface features and establishing commonly understood

terms for describing surface defects and contamination.

SEMI MF523 is also recommended (see Note 5).

Recommended maximum levels of surface defects and

contamination are listed in Table 2.

NOTE 4: SOS wafers are susceptible to surface damage. The

thin film on the hard sapphire substrate may be damaged

physically in ways that are not immediately evident. Special

care must therefore be used in the selection and execution of

measurement procedures.

NOTE 5: In SEMI MF523, defects commonly found in

silicon wafers are defined. Some of these terms do not apply

to SOS wafers, but are included in Table 2 to provide a

convenient reference point to the silicon wafer and epitaxial

wafer standards. In this case, the recommended maximum

acceptable limit is shown as N.A. (not applicable).

8 Sampling

8.1 Unless otherwise specified, ASTM Practice E 122

shall be used. When so specified, appropriate sample

sizes shall be selected from each lot according to

ANSI/ASQC Z1.4-1993. Each quality characteristic

shall be assigned an acceptable quality level (AQL) and

lot total percent defective (LTPD) value in accordance

with ANSI/ASQC Z1.4-1993 definitions for critical,

major, and minor classifications. If desired and so

specified in the contract or order, each of these

classifications may alternatively be assigned cumulative

AQL and LTPD values. Inspection levels shall be

agreed upon between user and supplier.

Table 2 Recommended Maximum Surface Defects Levels by Non-Destructive Means

ITEM

CHARACTERISTICS

MAX ACCEPTABLE

LIMIT

TEST METHOD

DEFECT DEFINITION

PER

NOTES

1 STACKING FAULTS N.A. 2

2 SLIP N.A. 2

3 PROTRUDING DEFECTS

(Including spikes, hillocks,

pyramids, and inclusions)

N.A. 2

4 PITS Diameter No.

2" 4

3" 9

100 mm 15

125 mm 20

150 mm 25

SEMI MF523 SEMI MF154 1, 3

5 SCRATCHES Cumulative L

1/2 wafer radius

SEMI MF523 SEMI MF154 1, 3

6 CRACKS, FRACTURES None SEMI MF523 SEMI MF154 5

7 ORANGE PEEL N.A. 2

8 EDGE CHIPS Max No. 2 SEMI MF523 SEMI MF154 2

9 EDGE CROWN N.A. 2

10 HAZE None SEMI MF523 SEMI MF154 1, 6

11 FOREIGN MATTER

FINGER PRINTS

None SEMI MF523 SEMI MF154 1, 7

NOTE 1: The outer 4 mm annulus is excluded from these criteria.

NOTE 2: These defects are not observed in SOS wafers. Terms remain for convenient reference to epitaxial silicon wafer specification.

NOTE 3: Ninety percent of the wafers shall be free of these defects. Balance of wafer may have defects at these limits.

NOTE 4: All chips shall be beveled. Maximum penetration 3 mm. Pointed apex chips none. Chips less than 0.4 mm (0.015 in.) shall not be

counted. See SEMI M3, Table R1-1.

NOTE 5: Cracks are observed in sapphire as fractures or as surface separations along cleavage planes.

NOTE 6: Haze refers to the presence of polycrystalline silicon deposits in the film, as described in Section 7.2.5. Haze shall not be visible under

lighting conditions of ASTM F 523.

NOTE 7: Particulate matter easily removed by industry-accepted cleaning techniques shall not constitute foreign matter.

SEMI M4-1103 © SEMI 1978, 2003 5

9 Certification

9.1 Upon request of the purchaser in the contract or

order, a manufacturer’s or supplier’s certification that

the material was manufactured and tested in accordance

with this specification, together with a report of the test

results, shall be furnished at the time of shipment.

9.2 In the interest of controlling inspection costs, the

supplier and purchaser may agree that the material shall

be certified as “capable of meeting” certain

requirements. In this context, “capable of meeting”

shall signify that the supplier is not required to perform

the appropriate tests in Section 7; however, if the

purchaser performs the test and the material fails to

meet the requirements, the material may be subject to

rejection.

10 Packing and Marking

10.1 Special packing requirements shall be subject to

agreement between the user and supplier. Otherwise all

wafers shall be handled, inspected, and packed in such

a manner as to avoid chipping, scratches, and

contamination, and in accordance with the best industry

practices to provide protection against damage during

shipment.

10.2 The wafers supplied under these specifications

shall be identified by appropriately labeling the outside

of each box or container, and each subdivision thereof,

in which it may reasonably be expected that the wafers

will be stored prior to further processing. Identification

shall include supplier’s name and reference number,

purchaser’s part number, purchaser order number,

quantity, dopant, conductivity type of epitaxial layers,

resistivity and thickness of the epitaxial layer; the

reference number assigned by the supplier shall provide

ready access to information concerning the fabrication

history of the particular substrates in that lot. Such

information shall be retained on file at the

manufacturer’s facility for at least one month after that

particular lot has been accepted by the purchaser.

NOTICE: SEMI makes no warranties or

representations as to the suitability of the standards set

forth herein for any particular application. The

determination of the suitability of the standard is solely

the responsibility of the user. Users are cautioned to

refer to manufacturer’s instructions, product labels,

product data sheets, and other relevant literature

respecting any materials mentioned herein. These

standards are subject to change without notice.

The user’s attention is called to the possibility that

compliance with this standard may require use of

copyrighted material or of an invention covered by

patent rights. By publication of this standard, SEMI

takes no position respecting the validity of any patent

rights or copyrights asserted in connection with any

item mentioned in this standard. Users of this standard

are expressly advised that determination of any such

patent rights or copyrights, and the risk of infringement

of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI M6-1000 © SEMI 1981, 20001

SEMI M6-1000

SPECIFICATION FOR SILICON WAFERS FOR USE AS

PHOTOVOLTAIC SOLAR CELLS

This specification was technically approved by the Global Silicon Wafer Committee and is the direct

responsibility of the European Materials Committee. Current edition approved by the European Regional

Standards Committee on July 28, 2000. Initially available at www.semi.org September 2000; to be published

October 2000. Originally published in 1981; previously published in 1985.

NOTE: This document replaces the previous version of SEMI M6 and M6.1, M6.2, M6.3, M6.4, and M6.5 in

their entirety.

1 Purpose

1.1 This specification covers the r equirements for

silicon wafers for use in photovoltaic (PV) solar cell

manufacture.

2 Scope

2.1 The dimensional characteristic s, crystalline defects

and commonly used wafer electronic properties are

described. Two classes of crystalline silicon materials

are recognized: monocrystalline and multicrystalline.

2.2 This standard does not purport to address safety

issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

2.3 SI (System International) units are used

throughout.

3 Referenced Standards

NOTE 1: The specification recognizes only two discrete

material forms monocrystalline and multicrystalline. In the

monocrystalline form one crystallographic orientation

describes the whole wafer and in the multicrystalline case

there is more than one crystallographic orientation present.

3.1 SEMI Standard

SEMI M1 — Specifications for Polished

Monocrystalline Silicon Wafers

3.2 ASTM Standards

E 122 — Standard Practice for Choice of Sample Size

to Estimate the Average for a Characteristic of a Lot or

Process

F 26 — Standard Test Methods for Determining the

Orientation of a Semiconductive Single Crystal

F 28 — Standard Test Methods for Minority-Carrier

Lifetime in Bulk Germanium and Silicon by

Measurement of Photoconductivity Decay

1 American Society for Testing and Materials, 100 Barr Harbor

Drive, West Conshohocken, PA 19428-2959

F 42 — Standard Test Methods for Conductivity Type

of Extrinsic Semiconducting Materials

F 43 — Standard Test Methods for Resistivity of

Semiconductor Materials

F 84 — Standard Test Method for Measuring

Resistivity of Silicon Wafers with an In-Line Four-

Point Probe

F 391 — Standard Test Methods for Minority Carrier

Diffusion Length in Extrinsic Semiconductors by

Measurement of Steady-State Surface Photovoltage

F 398 — Standard Test Method for Majority Carrier

Concentration in Semiconductors by Measurement of

Wavenumber or Wavelength of the Plasma Resonance

Minimum

F 533 — Standard Test method for Thickness and

Thickness Variation of Silicon Wafers

F 613 — Standard Test Method for Measuring

Diameter of Semiconductor Wafers

F 657 — Standard Test Method for Measuring Warp

and Total Thickness Variation on Silicon Wafers by

Noncontact Scanning

F 673 — Standard Test Methods for Measuring

Resistivity of Semiconductor Slices or Sheet Resistance

of Semiconductor Films with a Noncontact Eddy-

Current Gage

F 1188 — Standard Test Method for Interstitial Atomic

Oxygen Content of Silicon by Infrared Absorption

F 1391 — Standard Test Method for Substitutional

Atomic Carbon Content of Silicon by Infrared

Absorption

F 1535 — Standard Test Method for Carrier

Recombination Lifetime in Silicon Wafers by

Noncontact Measurement of Photoconductivity Decay

by Microwave Reflectance

F 1619 — Standard Test Method for Measurement of

Interstitial Oxygen Content of Silicon Wafers by

Infrared Absorption Spectroscopy with p-Polarized

Radiation Incident at the Brewster Angle