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SEMI P36-0600 © SEMI 2000 4 marker made on s pecim en stage AB spec imen sta ge wafer AB Cros s sec tion ≈ 4.8** M3 or M4** chip-type magnification reference chip-type magnification referenc e **Recommende d value Figure…

SEMI P36-0600 © SEMI 20003

center-to-center pitch

centerline

pattern edge mean line

least squares best fit line

linewidth

peak-to-peak edge

roughness

defined measurement length

segment

linewidth

peak line

valley line

peak

valley

NOTE 1: The figure ignores that fact that the SEM image is gray-scale and not black and white. Use the same intensity threshold

setting for measuring pitch as for line width The center-to-center pitch averaged over the measurement length segment is to be

certified and used for SEM magnification calibration

Figure 1

Definition of Edge Roughness

chip

stub

chip surface*

φ15

≈10.5

1.7±0.05

−0.032

−0.050

marker

stub

≈

* The flatness of the chip

surface to the specimen stage

surface could be automatically

determined by setting the

magnification reference on the

specimen stage.

Figure 2

Shape and size of chip-type magnification reference: unit mm

SEMI P36-0600 © SEMI 2000 4

marker made

on specimen

stage

specimen stage

wafer

AB Cross section

≈

4.8**

M3 or M4**

chip-type magnification reference

chip-type

magnification

reference

**Recommended value

Figure 3

Chip-type magnification reference mounted on specimen stage: unit mm

SEMI P36-0600 © SEMI 20005

APPENDIX 1

NOTES

NOTE: The material in this appendix is an official part of

SEMI P36 and was approved by full letter ballot procedures

on March 1, 2000 by the Japanese Regional Standards

Committee.

A1-1 Reference patterns for adjusting CD-SEM

magnification using their pitches and reference patterns

for optimizing pattern-edge determination parameters

using their widths

A1-2 The following procedures are generally applied

to critical dimension measurements using CD-SEMs: an

electron beam linearly scans across the measured

pattern, secondary and/or reflected electrons emitted

from every electron-beam incident point are collected

to form its intensity profile, pattern edges are

determined on the intensity profile using a designated

pattern-edge determination method, and the measure-

ment value of the width of the pattern is obtained from

the distance between the two pattern edges.

A1-3 Therefore, measurement errors of CD-SEM

measurements can be partitioned into two components:

one is magnification error and another is pattern-edge

determination error. Magnification error is caused by

variation of the equipment conditions such as the

sampling pitch and incident angle of electron beam.

Pattern-edge determination error is affected by the

manner of measurement such as pattern-edge

determination algorithm used and pattern-edge

determination parameters used, and the properties of the

specimen such as pattern topography (e.g., pattern-edge

slope) and pattern material.

A1-4 Magnification error, including inter-machine

magnification error, can be detected and corrected

through measuring pitches of reference patterns, and

pattern-edge determination error could be detected and

corrected through measuring widths of the reference

patterns practical reference patterns are available for

measuring their widths. However, it seems extremely

difficult to produce practical reference patterns for

measuring their widths; the source of the problem lies

in the physics of electron beam image formation and

not because the reference patterns are somehow

inadequate because of the following reasons: (a)

reference pattern can not be determined uniquely, since

intensity profiles obtained are different from each other

dependent on pattern topography and pattern materials

even if the width of every reference pattern is the same,

(b) it is technologically difficult to solve the problem of

width change due to the contamination which changes

the measurement value of pattern width dependent on

measurement time.

NOTICE: SEMI makes no warranties or

representations as to the suitability of the guideline set

forth herein for any particular application. The

determination of the suitability of the guideline is solely

the responsibility of the user. Users are cautioned to

refer to manufacturer’s instructions, product labels,

product data sheets, and other relevant literature

respecting any materials mentioned herein. These

guidelines are subject to change without notice.

The user’s attention is called to the possibility that

compliance with this guideline may require use of

copyrighted material or of an invention covered by

patent rights. By publication of this guideline, SEMI

takes no position respecting the validity of any patent

rights or copyrights asserted in connection with any

item mentioned in this guideline. Users of this

guideline are expressly advised that determination of

any such patent rights or copyrights, and the risk of

infringement of such rights, are entirely their own

responsibility.

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