semi合集-English.pdf - 第5837页

5 SEMI P30-0997 © SEMI 1997, 2004 6.27 Sta ndard Lay out Diagra m — List the standard layout when i nstalling equipment. Equi pment installation condition s can be listed in the diagram. 6.28 Mass — List i n kg. 6.29 Per…

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SEMI P30-0997 © SEMI 1997, 2004 4
maximum
5.5.4.3 Floor vibration, maximum ___________ dB
5.5.4.4 Air vibration, maximum ___________ dB
5.5.5 Electric power supply ___________ V/,
___________ /,
___________ kVA
5.5.6 Water supply ___________ L/min.
5.5.7 High-pressure gas supply ___________ (Example: Dry air, N
2
)
5.5.8 Reference standard (Example: SEMI PXX-XX)
6 Listed Items Guide (reference)
6.1 Equipment Name — List
6.2 Model — List
6.3 Throughput — To measure throughput, large-size
wafers are generally used. List the number of processes
per hour when 5-point measurement has been
continuously processed. When wafers other than the
maximum wafer sizes are used, list the wafer size.
Also, list if the operator should intervene. The
measurement position should be the center of wafer and
the outside 4 points from 1/2 of the diameter on the
diagonal line of the rectangle inscribing the wafer.
6.4 Please note that there are the following two
methods:
6.4.1 The number of wafers that can be processed per
hour for 1 wafer/lot processing.
6.4.2 The number of wafers that can be processed per
hour for 25 wafers/lot continuous processing.
6.5 Static Repeatability — Use 3
n-1
and nm as the
unit of measurement. When not listed, the sample
should be the photoresist pattern and the number of
measurement cycles should be 10.
6.6 Dynamic Repeatability — Use 3
n-1
and nm as the
unit of measurement. When not listed, the sample
should be the photoresist pattern, and the number of
measurement cycles should be 10. In addition, one
cycle of measurement should be just one cycle.
6.7 Reproducibility — Use 3
n-1
and nm as the unit of
measurement. When not listed, the sample should be
the photoresist pattern.
6.8 Image Resolution — The resolution should be
listed in nm. In addition, the accelerating voltage
acquired should be listed. When not listed, the sample
should use gold deposition, and the conversion should
be done from the photo image.
6.9 Measurement Precision Warranty Range —
Should be listed in µm. When the precision depends on
magnification, the listing of magnification is desirable.
6.10 Operation Method — List methods that can be
used in auto, semi-auto, and manual.
6.11 Transport Method — List double-cassette
supporting C to C method and/or SMIF supporting C to
C method.
6.12 Wafer Size — List dimensions defined in SEMI
M1. When creating guidelines, the dimensions are as
follows: 2 inch, 3 inch, 100 mm, 125 mm, 150 mm, 200
mm, 300 mm, and 400 mm.
6.13 Measurable Range — List ranges that can be
observed and measured through normal use in mm.
6.14 Stage Stopping Error — List the stopping error in
mm when moving the maximum distance in both X and
Y directions.
6.15 Alignment Method — List methods using optical
microscopes, SEM images, and other.
6.16 Alignment Precision — List in µm.
6.17 Measuring Pattern Identification Method — List
manual and auto and the content thereof.
6.18 Pattern Edge Determination — List manual and
auto and the content thereof.
6.19 Measuring Pattern Positioning Method — List
manual and auto and the content thereof.
6.20 Measuring Pattern Positioning Accuracy — List
in µm.
6.21 Magnification — List range.
6.22 Accelerating Voltage — List range in V or kV
units.
6.23 Electron Gun — List electron gun type.
6.24 Vacuum Exhaust System — List pump type,
exhaust volume, and number of units.
6.25 Communication Protocol — List external
computer and method of communication.
6.26 Dimensions — List block width, depth, and height
per equipment block in mm. This may be listed in the
standard layout diagram.
5 SEMI P30-0997 © SEMI 1997, 2004
6.27 Standard Layout Diagram — List the standard
layout when installing equipment. Equipment
installation conditions can be listed in the diagram.
6.28 Mass — List in kg.
6.29 Permissible Floor Weight — List in kg/m
2
.
6.30 Permissible Stray Magnetic Field — List in T,
and list effective values or peak values separately.
6.31 Permissible Floor Vibration — List the maximum
vibration level in dB in the 1–80 Hz frequency range.
The vibration acceleration level La is found from the
following equation:
La = 20l og ( a / a
o
)
Here,
a — Is the effective value of the vibration acceleration
when the sensory vibration is not corrected:
a
o
— (Standard vibration acceleration) (10
-6
m / s
2
)
6.32 Permissible Air Vibration — List the maximum
sound level in dB in the 20 Hz – 8 kHz frequency
range. The sound pressure level La is found from the
following equation:
La = 20l og (a / a
o
)
Here, a is the effective value for sound pressure in Pa
units.
a
o
(Standard sound pressure) (20 Pa)
6.33 Reference Specification — List guideline as the
reference specification.
NOTICE: SEMI makes no warranties or
representations as to the suitability of the standard set
forth herein for any particular application. The
determination of the suitability of the standard is solely
the responsibility of the user. Users are cautioned to
refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature
respecting any materials or equipment mentioned
herein. These standards are subject to change without
notice.
By publication of this standard, SEMI takes no position
respecting the validity of any patent rights or copyrights
asserted in connection with any item mentioned in this
standard. Users of this standard are expressly advised
that determination of any such patent rights or
copyrights, and the risk of infringement of such rights,
are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction of
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI P31-0304 © SEMI 1997, 2004 1
SEMI P31-0304
PRACTICE FOR CATALOG PUBLICATION FOR CHEMICAL
AMPLIFIED (CA) PHOTORESIST PARAMETER
This practice was technically approved by the Global Micropatterning Committee and is the direct
responsibility of the Japanese Micropatterning Committee. Current edition approved by the Japanese
Regional Standards Committee on January 9, 2004. Initially available at www.semi.org February 2004; to be
published March 2004. Originally published September 1997.
1 Purpose
1.1 The purpose of this document is to provide a
baseline for publication of chemical amplified (CA)
photoresist parameters.
2 Scope
2.1 This document applies to CA photoresist used for
semiconductor manufacturing.
2.2 This document is used as the guide to evaluate
photoresist process parameters.
2.3 This document is not applicable for quality
assurance.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Referenced Standards
None.
4 Terminology
4.1 Abbreviations and Acronyms
4.1.1 PEB — post exposure bake
5 Description
NOTE 1: The following parameters for CA photoresist
publication and test conditions should be described in the
catalog.
5.1 Resist, overcoat and developer commercial name
5.2 Temperature and humidity
5.3 Environmental conditions (see Section 6)
5.4 Ammonia concentration measurement method (see
Section 7)
5.5 Delay time dependency (see Section 8)
5.6 PEB temperature dependency (see Section 9)
5.7 PEB time dependency (see Section 10)
5.8 Substrate dependency (see Section 11)
5.9 Measurement Conditions
5.9.1 Resist Coating and Development
5.9.1.1 Resist baking method (contact baking or
proximity baking)
5.9.1.2 Resist pre-baking temperature and time
5.9.1.3 Resist PEB temperature and time
5.9.1.4 Development time
5.9.1.5 Resist thickness
5.9.2 Exposure
5.9.2.1 Illumination conditions (NA, σ, etc. )
5.10 Equipment Name
5.10.1 Exposure equipment
5.10.2 SEM equipment
5.10.3 Ammonia concentration measurement equip-
ment
6 Environmental Conditions
6.1 Ammonia Concentration — It is recommended to
measure all CA photoresist parameters under the
condition that the ammonia concentration is less than
10 µg/m
3
.
NOTE 2: CA photoresist is sensitive to the atmosphere,
especially to ammonia. Acid from photoacid generator upon
exposure is neutralized by the basic material in atmosphere
like ammonia.
7 Ammonia Concentration Measurement
Method
7.1 The ammonia concentration is measured by ion
chromatography or another method which is capable to
determine the ammonia concentration quantitatively
less than 10 µg/m
3
. The measurement equipment is
calibrated with a standard ammonia solution.