semi合集-English.pdf - 第5340页

SEMI M52-0703 © SEMI 2002, 2003 4 5.2.2 dimpl e — a shallow depression with gently sloping sides that exhibits a concave, s pherical shape and is visibl e to the unaided eye unde r proper lighting conditions. [SEMI M1] 5…

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SEMI M52-0703 © SEMI 2002, 2003 3
ISO 14644-1 — Cleanroom and associated controlled
environments – Part 1: Classification of air cleanliness
4.4 DIN Standards
5
DIN 50431 — Measurement of the electrical resistivity
of silicon or germanium single crystals by means of the
four-point-probe direct current method with collinear
probe array
DIN 50432 — Determination of the conductivity type
of silicon or germanium by means of rectification test
or hot-probe
DIN 50441-1 — Determination of the geometric
dimensions of semiconductor slices; measurement of
thickness
DIN 50441-2 — Determination of the geometric
dimensions of semiconductor slices; testing of edge
rounding
DIN 50441-4 — Determination of the geometric
dimensions of semiconductor slices; diameter and flat
depth of slices
DIN 50441-5 — Determination of the geometric
dimensions of semiconductor wafers; terms of shape
and flatness deviation
DIN 50445 — Contactless determination of the
electrical resistivity of semiconductor wafers with the
eddy current method
4.5 Other Standards
IEEE 754 — IEEE Standard for Binary Floating-Point
Arithmetic
6
IEEE 802 — IEEE Standard for Local and Metropolitan
Networks: Overview and Architecture
6
IEEE 854 — IEEE Standard Radix-Independent
Floating-Point Arithmetic
6
FED-STD 209E — Airborne Particulate Cleanliness
Classes in Clean Rooms and Clean Zones
7
NOTICE: Unless otherwise indicated, all documents
cited shall be the latest published versions.
5 Available from Deutsches Institut für Normung e.V., Beuth Verlag
GmbH, Burggrafenstrasse 4-10, D-10787 Berlin, Germany, Website:
www.din.de
6 Institute of Electrical and Electronics Engineers, IEEE Operations
Center, 445 Hoes Lane, P.O. Box 1331, Piscataway, New Jersey
08855-1331, USA. Telephone: 732.981.0060; Fax: 732.981.1721
7 General Services Administration, Federal Supply Service, FSS
Acquisition Management Center, Environmental Programs and
Engineering Policy Division (FCOE), Washington, D.C. 20406
[Withdrawn from use in 2001, replaced by ISO 14644-1 and
associated standards.]
5 Terminology
5.1 Abbreviations and Acronyms
5.1.1 ARAMS — Automated Reliability, Availability,
and Maintainability Standard
5.1.2 ASCII — American Standard Code for
Information Interchange
5.1.3 COP — Crystal Originated Particle/Pit
5.1.4 CRM — Certified Reference Material
5.1.5 FTP —File Transfer Protocol
5.1.6 GEM — Generic Model for Communications and
Control of Manufacturing Equipment
5.1.7 HSMS — High Speed SECS Message Services
5.1.8 IEEE — The Institute of Electrical and Electronic
Engineers
5.1.9 JPEG — Joint Photographics Expert Group
5.1.10 LLS — Localized Light Scatterer
5.1.11 LSE — Latex Sphere Equivalent
5.1.12 PSL spheres — Polystyrene Latex spheres
5.1.13 SECS II — SEMI Equipment Communications
Standard II
5.1.14 SSIS — Scanning Surface Inspection System
5.1.15 XLS — Extended Light Scatterer
5.1.16 XML — Extensible Markup Language
5.2 Terminology Regarding Defect Type
5.2.1 COP (C
rystal Originated Particle/Pit) — A pit
of approximately 100 nm in size bounded by
crystallographic planes, and formed by the intersection
of the polished surface with voids in the crystal.
5.2.1.1 Discussion — When the surface is cleaned,
etched, or oxidized the shape of the pit is modified and
the light scattering characteristics change. The spatial
distribution of scattered light from COPs and particles
is different, and therefore these two classes of defects
may be distinguished by an appropriately equipped
SSIS. COPs were first detected by SSIS and believed
to be small particles. It was also noticed that after
repeated cleaning (etching) the number of the COPs
increased as the etching process enlarged the pits and
changed their scattering characteristics. Later these
defects were identified as voids caused by the
coalescence of vacancies during the cooling of the
silicon crystal from its growth temperature. The term
crystal originated particle had already become accepted,
and even today many people still refer to COPs by their
original, though incorrect name.
SEMI M52-0703 © SEMI 2002, 2003 4
5.2.2 dimple — a shallow depression with gently
sloping sides that exhibits a concave, spherical shape
and is visible to the unaided eye under proper lighting
conditions. [SEMI M1]
5.2.3 haze — non-localized light scattering resulting
from surface topography (microroughness) or from
dense concentrations of surface or near surface
imperfections. [SEMI M1]
5.2.4 mound (epitaxial wafer) — regularly shaped
bump on a semiconductor wafer surface, which may
have one or more irregularly developed facets. [ASTM
F 1241]
5.2.5 mound (polished wafer) — a defect characterized
by small circular raised areas on the surface, typically
0.1 to 1.0 µm in height, 5 to 25 mm in diameter and
located in random positions on the wafer.
5.2.6 particle — a small, discrete piece of foreign
material or silicon not connected crystallographically to
the wafer. [SEMI M1]
5.2.7 pit — a depression in a wafer surface that has
steeply sloped sides that meet the surface in a
distinguishable manner in contrast to the rounded sides
of a dimple. [SEMATECH Technology Transfer
95082941A-TR]
5.2.8 scratch —
a shallow groove or cut below the
established plane of the wafer surface, with a length to
width ratio greater than 5:1. [SEMATECH Technology
Transfer 95082941A-TR
5.2.9 slip — a process of plastic deformation in which
one part of a crystal undergoes a shear displacement
relative to another in a fashion that preserves the
crystallinity of the material. [ASTM F 1241]
5.2.10 slurry ring — a ring-shaped area, higher than
the surrounding wafer surface caused by incomplete
cleaning of slurry residue.
5.2.11 spike — in an epitaxial wafer, a tall thin
dendrite of crystalline filament that often occurs at the
center of a recess. [ASTM F 1241, see also ASTM F
154]
5.2.12 stacking fault —
a two dimensional defect that
results from a deviation from the normal stacking
sequence of atoms in a crystal. [ASTM F 1241, see also
ASTM F 154]
5.2.13 stain — area contamination that is chemical in
nature and cannot be removed except through further
lapping or polishing. [ASTM F 1241]
5.3 Other Terminology
5.3.1 bias — the difference between the average of
measurements made on the same object and its true
value. Sufficient measurements are needed to mitigate
the effects of variability. [SEMI E89]
5.3.2 calibration — a measurement process that
assigns a value to the property of an artifact or to the
response of an instrument relative to reference
standards or to a designated measurement process.
5.3.2.1 Discussion — The purpose of calibration is to
eliminate or reduce bias in the user’s measurement
system relative to the reference base. The calibration
process compares an unknown or test item or
instrument with reference standards according to a
specific algorithm, often in the form of a specific
calibration curve. [SEMI
E89]
5.3.3 capture rate — the probability that an SSIS
detects an LLS of latex sphere equivalent (LSE) signal
value at some specified SSIS operational setting.
5.3.4 classification accuracy — how many of a
particular defect population are correctly classified.
5.3.4.1 Discussion — The accuracy of a classification
system is expressed as an equation: Accuracy = A/H,
where A is the total quantity of correctly classified
defects (human and machine classification results
agree) and H is the total quantity of human classified
defects.
5.3.5 classification purity — how many of the defects
classified by machine (SSIS) are properly classified.
5.3.5.1 Discussion — The purity of a classification
system can be expressed as an equation: Purity = A/M,
where A is the total quantity of correctly classified
defects (human and machine classification results
agree) and M is the total quantity of defects classified
as a specific class by machine (SSIS).
5.3.6 compatibility — the capability of measurement
equipment to emulate the measurement process of other
tools. Downward compatibility refers to former
generation(s) of the same or similar type of equipment
of an equipment supplier.
5.3.7 correlation — the relation of measurement
results obtained by repeated measurements with the
same set of test specimen(s) and any two measurement
tools expressed in terms of a regression curve.
5.3.8 CRM (Certified Reference Material) — reference
material, accompanied by a certificate, one or more of
whose property values are certified by a procedure
which establishes its traceability to an accurate
realization of the unit in which the property values are
expressed, and for which each certified value is
accompanied by an uncertainty at a stated level of
confidence. [ISO Guide 30:1992]
SEMI M52-0703 © SEMI 2002, 2003 5
5.3.9 level 1 variability (σ
1
) — the variation of
measurement results obtained by repeated
measurements with the same test specimen(s) and the
same measurement tool under nominally identical
conditions without replacing the test specimen between
subsequent measurement runs.
σ
1
tests are performed
with a single calibration in the shortest possible time
interval.
5.3.10 level 2 variability (σ
2
) — the variation of
measurement results obtained by repeated
measurements with the same test specimen(s) and the
same measurement tool with replacing the test
specimen between subsequent measurement runs but
otherwise under nominally identical conditions. σ
2
tests are performed with a single calibration in the
shortest possible time interval.
5.3.11 level 3 variability (σ
3
) — the variation of
measurement results obtained by repeated
measurements with the same test specimen(s) and the
same measurement tool with replacing the test
specimen between subsequent measurement runs but
otherwise under nominally identical conditions. σ
3
tests
are performed over a time period greater than σ
2
tests
without operator induced adjustment.
5.3.12 matching tolerance (∆
m
) — the difference in
bias for any two measurement tools of the same kind.
Otherwise matching tolerance tests are performed under
the conditions of σ
3
tests.
5.3.13 scanning surface inspection system (SSIS) — An
instrument for rapid examination of the entire quality
area on a wafer to detect the presence of localized light
scatterers or haze or both; also called particle counter
and laser surface scanner.
5.3.14 sorting — real and virtual separation of test
specimens in different categories specified by one or
multiple parameters.
6 Recommended Specification for
Measurement Equipment for Silicon Wafers of
the 130-nm Technology Generation
6.1 The recommended specification is structured in
three sections (Tables 1–3):
• Generic Equipment Characteristics (Table 1)
• Materials to be measured (Table 2)
• Metrology Specific Equipment Characteristics
(Table 3)
6.1.1 Tables 1–3 contain the recommended
specifications, referenced documents, test methods, and
comments. Additional explanations and discussions are
provided in this section.
6.2 Generic Equipment Characteristics (Table 1)
6.2.1 The section “Generic Equipment Characteristics”
consists of five subsections:
• Wafer handling
• Reliability
• Procedural
• Documentation
• Computer/User Interface/Connectivity
6.2.2 Subsections covering “Facilities Requirements”
and “Safety/Legal/Regulatory” are not included in the
present guide as these issues are highly user specific
and dependent on national regulations.
6.3 Materials to be measured (Table 2)
6.3.1 Table 2 specifies the parameters of silicon wafers
that the measurement equipment must be capable to
handle and to measure.
6.4 Metrology Specific Equipment Characteristics
(Table 3)
6.4.1 This section specifies the measurement functions
of the SSIS, the setup parameters of the SSIS and the
performance of the SSIS. Specifications in Table 3
apply to wafer front side surface inspection only.
6.4.1.1 For back surface inspection, particles,
scratches, and haze are required to be detected.
6.4.2 The surface defects to be detected by the SSIS
are listed in Table 3, lines 1.1.1 to 1.1.14. They are
reported as LLS or XLS. The measurement
performance of the equipment is verified with PSL
sphere depositions on wafers that meet the COP and
haze requirements of the 130-nm technology
generation.
6.4.3 All size units of LLS are given in [length unit]
LSE, e.g., nm LSE, and refer to a nominal diameter.
6.4.4 The geometrical size of a defect (LLS) may differ
considerably from its size as reported in LSE units, as
the cross section for light scattering of a defect depends
sensitively on the properties of the LLS.
6.4.5 PSL depositions used as reference materials are
required to be CRMs, traceable to a National Standards
Laboratory.
6.4.6 For COPs and particles, classification accuracy
and purity are specified.