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SEMI G25-89 © SEMI 198 4, 1989 1 SEMI G25-89 TEST METHOD FOR MEA SURING THE RESISTANCE OF PA CK AGE LEADS 1 Purpose This docum ent defines the equipment, materials, and procedure used to m easure the resistance of leads …
SEMI G24-89 © SEMI 1984, 1996 2
3.7 Place the probes down on the leads to be
measured. This should be a vertical movement only.
3.8 Take the capacitance reading. If using auto-
zeroing equipment, this capacitance measurement will
be used. If not, take the reading from 3.6 and subtract it
from the reading in 3.8 to derive the capacitance
measurement of interest. (See Table 1.)
Table 1 Capacitance Nulling Procedurefor Non-
Zeroing Equipment
Pins to be
Measured
Capacitance
Reading at
3.6
Capacitance
Reading at
3.8
Subtraction Step to
Derive Desired
Capacitance at 3.9
1 & 2 C
1
C
2
C
2
–C
1
= C
3
3 & 4 0.050 pf 2.130 pf 2.130–0.050 = 2.080
pf
For Auto-Zeroing Equipment:
Pins to be
Measured
Capacitance
Reading at
3.6
Capacitance
Reading at
3.8
Subtraction Step to
Derive Desired
Capacitance at 3.9
5 & 6 C
1
C
2
C
2
–C
1
= C
3
7 & 8 0.00 pf* 2.08 pf 2.080–0.000 = 2.080
pf
*Follow instrument instructions to read 0.00 pf
3.9 Repeat the procedure as required.
4 Procedure: Loading Capa citance
(See Figure 2)
4.1 Omit guard terminal. Connect together all the pins
in close proximity to the one to be measured. Example:
Eight surrounding pins are connected together for the
68 pin grid; twelve surrounding pins are connected
together for the 124 pin grid; eight surrounding pins are
connected together for all flat packs (see Figure 2). If
there are power planes and/or large power buses in the
package, their pins must be connected together with the
eight or 12 surrounding pins discussed above.
4.2 Place one coaxial probe approximately 1/8 inch
above the cavity side of any one of the eight or 12 leads
discussed in Section 4.1.
Figure 2
Loading Capacitance
4.3 Place the other coaxial probe approximately 1/8
inch above the cavity side of the lead to be measured.
4.4 Continue as in Steps 3.6 to 3.9.
4.5 Overall accuracy with this method is ± 5%.
NOTICE: These standards do not purport to address
safety issues, if any, associated with their use. It is the
responsibility of the user of these standards to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
SEMI makes no warranties or representations as to the
suitability of the standards set forth herein for any
particular application. The determination of the
suitability of the standard is solely the responsibility of
the user. Users are cautioned to refer to manufacturer’s
instructions, product labels, product data sheets, and
other relevant literature respecting any materials
mentioned herein. These standards are subject to
change without notice.
The user’s attention is called to the possibility that
compliance with this standard may require use of
copyrighted material or of an invention covered by
patent rights. By publication of this standard, SEMI
takes no position respecting the validity of any patent
rights or copyrights asserted in connection with any
item mentioned in this standard. Users of this standard
are expressly advised that determination of any such
patent rights or copyrights, and the risk of infringement
of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI G25-89 © SEMI 1984, 19891
SEMI G25-89
TEST METHOD FOR MEASURING THE RESISTANCE OF PACKAGE
LEADS
1 Purpose
This document defines the equipment, materials, and
procedure used to measure the resistance of leads in
packaging elements. This document uses a pin grid
(cavity down) package as one example of the type of
packaging element that can be measured with the
method described herein; however, this measurement
technique can be applied to other geometrics with
proper consideration.
2 Equipment and Materials
2.1 D.C. Ohmmeter which uses th e four point probe
(Kelvin) method with four cables. Minimum accuracy
should be ± 4 mΩ.
2.2 Probe station with four probes. Probes should be
such that the taper of the probe and the diameter of its
point allow two probes to come together within a 5 mil.
square without touching each other elsewhere.
Recommendation: Micromanipulator, four each, probe
number OON-FPC-6000 with #3 collet or equivalent.
3 Procedure
3.1 Place both probes of the low side of the meter as
close together as possible on the shoulder or in the
center of the outside lead (see Figure 1, Point A).
3.2 Place both probes of the high s ide of the meter
within 5 mils of the end of the lead on the cavity side of
the lead (see Figure 1, Point B).
3.3 Set the ohmmeter scale to the lowest setting
possible without putting meter in an “over range”
mode.
Figure 1
Resistance Measurement
3.4 Take resistance reading. Overall accuracy with this
method is ± 20 mΩ. This accuracy estimate includes
basic instrumentation error, probe placement
repeatability, and typical package construction (printed
pattern accuracy).=
4 Application Note
Readings below 100 mΩ can be made with acceptable
reeatability if considerable care in pleacement is taken.
For example, in measuring a conductor made of
tungsten 0.010" wide, a 0.010" variation in the distance
between the two sets of probes will result in a 15 mΩ
change in the measured reading. The same variation in
a gold conductor would result in a 3–5 mΩ error.
NOTICE: These standards do not purport to address
safety issues, if any, associated with their use. It is the
responsibility of the user of these standards to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
SEMI makes no warranties or representations as to the
suitability of the standards set forth herein for any
particular application. The determination of the
suitability of the standard is solely the responsibility of
the user. Users are cautioned to refer to manufacturer’s
instructions, product labels, product data sheets, and
other relevant literature respecting any materials
mentioned herein. These standards are subject to
change without notice.
The user’s attention is called to the possibility that
compliance with this standard may require use of
copyrighted material or of an invention covered by
patent rights. By publication of this standard, SEMI
takes no position respecting the validity of any patent
rights or copyrights asserted in connection with any
item mentioned in this standard. Users of this standard
are expressly advised that determination of any such
patent rights or copyrights, and the risk of infringement
of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI G26-90 © SEMI 1983, 19961
SEMI G26-90
SPECIFICATION FOR HERMETIC SLAM CHIP CARRIER LIDS
1 Preface
This specification covers the ceramic piece part
commonly referred to as a lid, used in the construction
of a hermetic SLAM package with a .050" pad
centerline. The SLAM package is covered separately in
the SEMI G5 Specification for Ceramic Chip Carriers.
2 Applicable Documents
MIL-STD-883
1
— Test Methods and Procedures for
Microelectronics
MIL-M-38510 — General Specification for
Microcircuits
MIL-I-23011 — Iron Nickel Alloys for Sealing to Glass
and Ceramic
3 Selected Definitions
burr — A fragment of excess material or foreign
particle adhering to the surface.
chip — Region of ceramic missing from the surface or
edge of a package which does not go completely
through the package. Chip size is given by its length,
width and depth from a projection of the design plan-
form (see Figure 1).
Figure 1
Chip Illustration
crack — A cleavage or fracture that extends to the
surface of a package. It may or may not pass through
the entire thickness of the package.
1 Military Standards, Naval Publications and Form Center, 5801
Tabor Ave., Philadelphia, PA 19120
fin — A fine, feathery-edged projection on the edge or
corner of the ceramic.
glass flow — Heated just sufficiently to remove all
screen mesh marks visible at 10× magnification.
overhang — Horizontal extension of glass from the
ceramic.
projection — Raised portion of the surface indigenous
with the parent material.
pullback — Defines a dimension covering the linear
distance between the edge of the ceramic and the first
measurable glass interface excluding any glass spatter
(see Figure 2).
rundown — Vertical extension of glass from the
ceramic (see Figure 2).
Figure 2
Glass Misalignment
seal area — A dimensional outline area designated for
sealing the lid and package together.
terminal — Case outline at point of entry or exit of an
electrical contact.
void —An absence of glass from a designated glassed
area on the ceramic surface.
4 Ordering Information
Purchase orders for SLAM lids furnished to this
specification shall include the following items:
1. Drawing number and revision level
2. Type and color of ceramic
3. Type and thickness of sealing material
4. Length, width, thickness and sealing area
5. Certification
6. Method of test and measurements (see Section 9)
7. Lot acceptance procedures (see Section 8)
8. Packaging and marking (see Section 10)