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1 SEMI P30-0997 © SEMI 1997, 2004 SEMI P30-0997 (Reapproved 1104) PRACTICE FOR CATALO G PUBLICATION OF CR ITICAL DIMENSION MEASUREMENT SCANNING ELECTR ON MICROSCOPES (CD-SEM) This standard was techn ically approved by th…
SEMI P29-0997 © SEMI 1997 4
13 Etching Characteristics
13.1 Specifications of etching characteristics of a
mask blank shall be agreed upon by the supplier and
user.
14 Electrical Conductance
14.1 Electrical characteristics of a halftone phase shift
mask blank should be represented by sheet resistance,
and its specification and measuring method shall be
agreed upon by the supplier and user.
15 Defects
15.1 Specific defects of a halftone phase shift mask
and mask blank are phase defects and transmittance
defects.
These defects are caused by halftone shifter dot, half-
tone shifter hole, halftone shifter protrusion, halftone
shifter intrusion, halftone shifter film thickness defect,
halftone shifter film quality defect, and foreign
materials.
15.2 Specifications for inspection and repair shall be
agreed upon by the supplier and user.
15.3 Definition of defect sizes should conform to
SEMI P22.
16 Ordering Information
16.1 It is recommended to agree mutually on the
following items when ordering halftone phase shift
masks. The other items should conform to SEMI P1.
Type of halftone structure Single-layer type, or
multilayer type
Type of opaque ring Embedded shifter type, or
additional film type
Film materials To be agreed upon by the
supplier and user
Exposure wavelength To be agreed upon by the
supplier and user
Transmittance To be agreed upon by the
supplier and user
Phase difference To be agreed upon by the
supplier and user
Reflectivity To be agreed upon by the
supplier and user
Defects, foreign materials,
repair
To be agreed upon by the
supplier and user
16.2 It is recommended to agree mutually on the
following items when ordering halftone phase shift
mask blanks. The other items should conform to SEMI
P1.
Type of halftone structure Single-layer type, or
multilayer type
Light shield film Added, or not
Film materials To be agreed upon by the
supplier and user
Exposure wavelength To be agreed upon by the
supplier and user
Transmittance To be agreed upon by the
supplier and user
Phase difference To be agreed upon by the
supplier and user
Reflectivity To be agreed upon by the
supplier and user
Etching characteristics To be agreed upon by the
supplier and user
Electrical conductivity To be agreed upon by the
supplier and user
Defects, foreign materials To be agreed upon by the
supplier and user
17 Sampling
17.1 Sampling should conform to SEMI P1.
18 Related Documents
SEMI P3 — Specification for Photoresist/E-Beam
Resist for Hard Surface Photoplates
NOTICE: These standards do not purport to address
safety issues, if any, associated with their use. It is the
responsibility of the user of these standards to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
SEMI makes no warranties or representations as to the
suitability of the standards set forth herein for any
particular application. The determination of the
suitability of the standard is solely the responsibility of
the user. Users are cautioned to refer to manufacturer’s
instructions, product labels, product data sheets, and
other relevant literature respecting any materials
mentioned herein. These standards are subject to
change without notice.
The user’s attention is called to the possibility that
compliance with this standard may require use of
copyrighted material or of an invention covered by
patent rights. By publication of this standard, SEMI
takes no position respecting the validity of any patent
rights or copyrights asserted in connection with any
item mentioned in this standard. Users of this standard
are expressly advised that determination of any such
patent rights or copyrights, and the risk of infringement
of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction
of the contents in whole or in part is forbidden without express written
consent of SEMI.
1 SEMI P30-0997 © SEMI 1997, 2004
SEMI P30-0997 (Reapproved 1104)
PRACTICE FOR CATALOG PUBLICATION OF CRITICAL DIMENSION
MEASUREMENT SCANNING ELECTRON MICROSCOPES (CD-SEM)
This standard was technically approved by the Global Micropatterning Committee and is the direct
responsibility of the Japanese Micropatterning Committee. Current edition approved by the Japanese
Regional Standards Committee on July 23, 2004. Initially available at www.semi.org September 2004; to be
published November 2004. Originally published in 1997.
1 Purpose
1.1 The purpose of this practice is to define terms
listed in Critical Dimension-Scanning Electron
Microscopes (CD-SEM).
1.2 This document is designed to create a common
understanding between suppliers and users.
2 Scope
2.1 This practice applies to terms listed in the CD-SEM
catalog.
2.2 This practice also applies to terms listed in the
estimate and purchasing specification.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Referenced Documents
3.1 None.
4 Terminology
4.1 Definitions
4.1.1 accelerating voltage — the mean kinetic energy
of primary electrons converted into voltage.
4.1.2 alignment — corrects coordinates for positions
and specimen stage. Matching the coordinates of a
wafer and a specimen stage in order to address
measured patterns formed on a wafer.
4.1.3 alignment error — distance from the pattern
center to screen center after alignment. This is the
maximum distance between the screen center and a
target pattern after addressing by its coordinates and
completing alignment.
4.1.3.1 automatic pattern determination method — the
pattern selection method based on the automatic pattern
recognition system.
4.1.4 Critical Dimension Measurement SEM (CD-
SEM) — selects fine patterns on a wafer and measure
dimensions. Here, wafers include SEMI standards
(defined sizes) only. The operation is normally in the
following “sequence”: Transport -> Stage Travel ->
Positioning -> Measuring -> Transport.
4.1.5 image resolution — resolution between two
points. This is the minimum resolving distance
between any two points in an image.
4.1.6 magnification — the ratio of a deflection width
on a display to that on a measurement pattern.
Compares the deflection width on the screen and on the
pattern.
4.1.6.1 manual pattern determination method —
operator uses cursors, etc. The pattern selection method
is accomplished by the operator placing cursors on the
measurement pattern.
4.1.7 measurable range — measurement range to
guarantee static and dynamic repeatability as well as
linearity. Measuring dimensions guaranteed to be
within the specification of static repeatability, dynamic
repeatability, and linearity.
4.1.8 measurement pattern determination method —
identifies the pattern to be measured. This method is
used to identify the pattern to be measured. It is
performed by automatic pattern recognition, or
instructions from the operator.
4.1.9 measurement precision
4.1.9.1 dynamic repeatability — variations between
the nominal and measured dimensions. This is the
maximum dispersion of measurements from the best
approximate line defined between the nominal and
measured dimensions.
4.1.9.2 linearity — variations in measurement values
without changing device and wafer conditions. This is
the closeness of agreement between the measured
values obtained by measuring a pattern repeatedly
without any changes of measurement conditions.
4.1.9.3 reproducibility — variations in average
measurement values acquired in a sequence during a
certain period. This is the closeness of agreement
between the mean values obtained by measuring a
pattern repeatedly at stated period with wafer loading,
wafer alignment, stage traveling to a measurement site,
SEMI P30-0997 © SEMI 1997, 2004 2
positioning of a measured pattern, measuring, and
wafer unloading.
4.1.9.4 static repeatability — variations in average
measurement values acquired in a sequence for a
pattern. This is the closeness of agreement between the
measured values obtained by measuring a pattern with
wafer loading, wafer alignment, stage traveling to a
measurement site, positioning of a measured pattern,
measuring, and wafer unloading.
4.1.10 measurement target — kind of measurement
pattern. The measurement pattern, such as line, space,
pitch, hole, box-in-box, etc.
4.1.11 operation method — the control method of
operation sequence. There are three methods: auto,
semi-auto, and manual.
4.1.11.1 automatic operation method — the operation
method controlled by a computer automatically, after an
operator sets a carrier on the equipment. The computer
follows the commands written in a recipe. Uses a
recipe on a computer.
4.1.11.2 manual operation — the operation method
controlled by an operator without a recipe. Uses an
operator.
4.1.11.3 semi-auto operation — the operating method
controlled by a computer and an operator. The operator
confirms the results of each command in a recipe using
an automatic operation. Uses a recipe with an operator.
4.1.12 pattern edge determination method — uses a
computer or an operator to look at the image. This is
the method for determining the edge position of a given
pattern, which is calculated by computer algorithm or
by operator instructions.
4.1.12.1 automatic pattern edge determination — there
are several methods, such as the threshold method, the
linear approximation method, and the curve fitting
method. This is the method used to determine the edge
position automatically by calculating from the line
profile signal of the secondary or back-scattered
electrons. The calculations are performed using the
aforementioned three algorithms.
4.1.12.2 manual pattern edge determination method —
the operator measures the distance between cursors per
image edge area. This method is used to determine the
edge position manually by calculation based on the
width between cursors, which are set to the
measurement pattern edges by operator.
4.1.13 pattern positioning error — distance from the
center of screen after positioning. This is the maximum
distance between the screen center and a target pattern
after pattern positioning.
4.1.14 permissible air vibration — the maximum air
vibration that can provide the guaranteed resolution.
4.1.15 permissible floor loading capability — the
minimum floor loading capability where the equipment
can be settled.
4.1.16 permissible stray magnetic field — the
maximum change in the stray magnetic field that can
provide the guaranteed resolution.
4.1.17 permissible floor vibration
— the maximum
floor vibration that can provide the guaranteed
resolution.
4.1.18 positioning of measured patterns — moving
pattern to the center screen (center of image field).
4.1.19 stage positioning error — variations when
moving stage to a selected location repeatedly without
correction. This is the positioning error of stage, which
occurs when traveling to the same site repeatedly
without electron beam deflection.
4.1.20 stage positioning range — range on a wafer that
can be measured by moving the wafer. This is the
measurable range of a measured wafer placed on a
specimen stage with stage moving.
4.1.21 throughput — the number of processed wafers
(per unit time, which is calculated from the time
required for processing under pre-scheduled
measurement sequence and conditions).
4.1.22 transport — transferring wafer from a wafer
carrier to a specimen stage, or the reverse process.
4.1.23 wafer size — wafer diameter.