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SEMI M31-0705 © SEMI 1998, 2005 8 Figure 6 Features That Prev ent Wafer Creep-Out Figure 7 Lower Cross-Section at Facial Datum Plane z 8 = 44 x 3 125 z 12 = 10 z 12 = 10 bilateral datum plane horizontal datum plane z 6…
SEMI M31-0705 © SEMI 1998, 2005 7
z15 13
z11
6
z12 =10
x3 125
bilateral
datum
plane
z23 3
top
nominal
wafer
plane
z10 =±0.5
(height of
wafer bottom)
r2 =152
r3 r2 + 1
+1
–0
Figure 5
Upper Cross-Section at Facial Datum Plane
5.9.1 Wafer Set-Down Volume — The open space for the wafer set-down volume consists of a cylindrical section
with radius r2 and a main axis parallel to and y1 in front of the nominal wafer centerline. The top of this cylindrical
section is z11 above the nominal wafer seating plane and its bottom is z10 above the nominal wafer seating plane.
The implications for wafer positioning of the tolerance on r2 are as follows. The wafers should be placed in the
FOSB within a circle of radius corresponding to the smaller bound on r2 to avoid touching the edge of the wafer to
the side of the FOSB. Once the wafer has been placed, the FOSB must not allow a wafer to move outside of a circle
of radius corresponding to the larger bound on r2. There are two exceptions to this limit on wafer movement. When
the wafer is pushed toward the rear of the FOSB, the location of the wafer is defined by the wafer pick-up volume
(see ¶5.9.3). When the FOSB is gently tilted forward up to 45°, the wafers may slide forward, but it is recommended
that they not extend further than y20 from the facial datum plane. This may be accomplished by designing the teeth
supporting the wafers to include a “wafer stopper” at the front that is outside of r2 and under z29 as illustrated in
Figure 6.
5.9.2 Wafer Extraction Volume — The open space for the wafer extraction volume includes a cylindrical section
with radius r3 and a main axis parallel to and y1 in front of the nominal wafer center line. The top of this cylindrical
section is z11 above the nominal wafer seating plane and its bottom is z23 above the nominal wafer seating plane.
The wafer extraction volume also includes the extrusion out the front of the FOSB of this cylindrical section and the
portion of the wafer set-down volume above z29. The implications for wafer extraction of the definition of
dimension r3 (r3 r2 + 1) are as follows. The FOSB must give an extra 1 mm (0.04 in.) of horizontal clearance
once the wafer is picked up from wherever it ends up (within the bounds of r2) after transport in the FOSB.
SEMI M31-0705 © SEMI 1998, 2005 8
Figure 6
Features That Prevent Wafer Creep-Out
Figure 7
Lower Cross-Section at Facial Datum Plane
z8 = 44
x
3
125
z12 = 10
z
12 = 10
bilateral
datum
plane
horizontal
datum plane
z
6
32
bottom
nominal
wafer
plane
Wafer
z
10
= ±0.5
z
29
0.7
z12 = 10
z
11
6
front side of the FOSB where wafers are accessed
SEMI M31-0705 © SEMI 1998, 2005 9
5.9.3 Wafer Pick-Up Volume — If a wafer is placed in the wafer set-down volume and is then pushed toward the
rear of the FOSB, then the entire bottom of the wafer must be contained in the wafer pick-up volume. However, if
the wafer is not pushed toward the rear of the FOSB, then the wafer may only be somewhere within the wafer
extraction volume. The wafer pick-up volume is defined by a cylindrical section with radius r1 and a main axis at
the nominal wafer centerline. Its top and bottom are the upper and lower tolerance of z10 around the nominal wafer
seating plane.
5.10 Pitch and Capacity — Table 1 shows the different options with regard to the wafer pitch (spacing) and the
FOSB capacity. Again, no tolerance is given on the wafer pitch (z12), for reasons given in ¶5.9.
Table 1 Pitch and Capacity Options
Option Number
FOSB Capacity (c)
Wafer Pitch (z12)
Wafer Clearance (z11)
1 13 wafers 10 mm (0.39 in.) 6 mm (0.24 in.) minimum
2 25 wafers 10 mm (0.39 in.) 6 mm (0.24 in.) minimum
Table 2 Internal FOSB Dimensions (Figures 2
7)
Value Specified
Symbol
Used
Figure
Number
Manual Door Auto-door
Datum Measured from Boundary or Feature Measured to
r1 2 151 mm (5.94 in.) maximum nominal wafer centerline outer edge of wafer pick-up volume
r2 2, 5 152 = 1 – 0 mm
(5.99 + 0.03 – 0 in.)
y1 in front of nominal wafer
centerline
encroachment of FOSB side domains on
wafer set-down volume
r3 2, 5 r2 + 1 mm (0.04 in.) minimum y1 in front of nominal wafer
centerline
encroachment of FOSB side domains on
wafer extraction volume
r4 2 170 mm (6.69 in.) minimum nominal wafer centerline encroachment of FOSB on end effector
exclusion zone between front and rear
FOSB side domains
x1 2, 4 50 mm (1.97 in.) minimum bilateral datum plane inside of rear FOSB side domains
x2 2, 4 75 mm (2.95 in.) maximum bilateral datum plane outside of rear FOSB side domains
x3 2, 4, 5, 7 125 mm (4.92 in.) minimum bilateral datum plane inside of front FOSB side domains
x51 2 140 mm (5.51 in.) minimum bilateral datum plane interior of FOSB sides between y11 and
y49
x52 2 170 mm (6.69 in.) minimum bilateral datum plane interior of FOSB sides between y49 and
y52
y1 2 3 mm (0.12 in.) maximum facial datum plane origin of r2 and r3 on bilateral datum
plane
y5 2, 3 120 mm (4.72 in.) minimum facial datum plane front of rear FOSB side domains
y11 2 85 mm (3.35 in.) maximum facial datum plane interior of FOSB sides between x3 and
x51
y20
#1
None 158 mm (6.22 in.) facial datum plane maximum protrusion of wafers toward
the front of the FOSB
y49 2 134 mm (5.28 in.) maximum facial datum plane interior of FOSB sides between x51 and
x52
y51 2 50 mm (1.97
in.) minimum
140 mm
(5.51 in.)
minimum
facial datum plane rear of door
z6 3, 4, 7 32 mm (1.26 in.) maximum horizontal datum plane top of FOSB bottom domain