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SEMI G30-88 © SEMI 198 6, 1988 5 Figure 1 Temperature-Controlled Heat Sink Assembly Figure 2 Temperature-Controlled Fluid Bath Assembly Figure 3 Reference Point Location for Case Tem perture Measurem ent of A) Cavity-Up …

SEMI G30-88 © SEMI 1986, 1988 4

measurement to be made is that of the temperature-

sensitive parameter, i.e., V

, under operating

conditions with the measuring current, I

, used during

the calibration procedure. The microelectronic device

under test shall then be operated with heating power

) applied. The temperature-sensitive parameter,

, shall be measured with constant measuring

current, I

, that was applied during the calibration

procedure (See Step 1).

The heating power, P

, shall be chosen such that the

calculated junction-to-reference point temperature

difference as measured at V

is greater than or equal

to 20°C. In accomplishing this, the device under test

should not be operated at such a high heating power

level that the on-chip temperature-sensing and heating

circuitry is no longer electrically isolated. Care should

also be taken not to exceed the design ratings of the

package-interconnect system, as this may lead to an

overestimation of the power being dissipated in the

active area of the chip due to excessive power losses in

the package leads and wire bonds. The values of V

, and P

are recorded during the power application

test.

The following data shall be recorded for these test

conditions:

a. Temperature-sensitive electrical parameters (V

, or other appropriate TSP).

b. Junction temperature, T

, is calculated from the

equation:

= T

+ V

− V

()

∆V

∆T

−1

where T

= T

or T

c. Case or mounting surface temperature, T

or T

d. Power dissipation, P

e. Mounting arrangement (including package

mounting force).

3.3 Calculations of R

ΘJR

3.3.1 Calculations of Package Therm al Resistance —

The thermal resistance of a microelectronic device can

be calculated when the junction temperature, T

, has

been measured in accordance with procedures outlined

in Sections 3.1 and 3.2.

With the data recorded from each test, the thermal

resistance shall be determined from:

−

H(package)

, junction - to reference point,

where R

QJR

QJC

or R

QJM

and T

or T

, respectively.

4 Summary Report

The following details shall be specified as appropriate:

a. Description of package, including thermal test chip,

location of case or chip carrier temperature

measurement(s), and heat sinking arrangement.

b. Test condition(s), as applicable (see Section 3).

c. Test voltage(s), current(s), and power dissipation of

test chip.

d. Recorded data for each test condition, as applicable.

e. Symbol(s) with subscript designation(s) of the

thermal characteristics determined.

f. Accept or reject criteria.

RELATED REFERENCES

1. Unencapsulated Thermal Test Chip, SEMI G32-86

Guideline, Book of SEMI Standards, Packaging

Volume.

2. Accepted Practices for Making Microelectronic

Device Thermal Characteristics Test — A User’s

Guide. JEDEC Engrg. Bull. No. 20, Jan. 1975

(Electronic Industries Assoc., Washington, D.C.).

3. Thermal Characteristics, Method 1012.1, MIL-STD-

883C Test Methods and Procedures for

Microelectronics, Nov. 4, 1980 (Rev. Aug. 15,

1984).

Figure 1

Temperature-Controlled Heat Sink Assembly

Figure 2

Temperature-Controlled Fluid Bath Assembly

Figure 3

Reference Point Location for Case Temperture

Measurement of A) Cavity-Up and B) Cavity—

Down Ceramic Packages

Figure 4

Reference Point Location for Case Temperature

Measurement of a Ceramic Package with an

Integral Head Dissipater

Figure 5

Mounting Surface Temperature Measurements

NOTICE: These standards do not purport to address

safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

SEMI makes no warranties or representations as to the

suitability of the standards set forth herein for any

particular application. The determination of the

suitability of the standard is solely the responsibility of

the user. Users are cautioned to refer to manufacturer’s

instructions, product labels, product data sheets, and

other relevant literature respecting any materials

mentioned herein. These standards are subject to

change without notice.

The user’s attention is called to the possibility that

compliance with this standard may require use of

copyrighted material or of an invention covered by

patent rights. By publication of this standard, SEMI

takes no position respecting the validity of any patent

rights or copyrights asserted in connection with any

item mentioned in this standard. Users of this standard

are expressly advised that determination of any such

patent rights or copyrights, and the risk of infringement

of such rights, are entirely their own responsibility.

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