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SEMI P32-1104 © SEMI 1998, 2004 6 10 Related Documents 10.1 SEMI Standards SEMI P12 — Determination of Iron, Zinc, Calcium, Magnesium , Copper, Boron, Alumi num, Chr omium , Manganese, and Nickel in Positive Photo resist…
SEMI P32-1104 © SEMI 1998, 2004 5
8.4.2 Direct Method
8.4.2.1 Prepare a photoresist test solution by diluting. Solvents such as PGMEA or EL are recommended.
8.4.2.2 Record the name of diluting solvent and dilution factor. Dilution factor is recommended to be in the range of
5 to 50.
8.4.2.3 In GF-AAS or ETA-AAS analysis, furnace program (step, temperature, ramp time, hold time) should be
determined referring to Table 4 before trace metal analysis.
Table 4 Recommended Furnace Program for GF-AAS and ETA-AAS
Element Drying Temperature (°C) Ashing Temperature (°C) Atomization Temperature (°C)
Al 130 1400 2700
Ca 130 1300 2600
Cr 130 1300 2700
Cu 130 900 1600
Fe 130 900 2500
Mg 130 900 2200
Mn 130 900 2600
Ni 130 1200 2700
K 130 800 2000
Na 130 800 2000
8.4.2.4 In GF-AAS, ETA-AAS, or ICP-AES analysis, analytical wavelength should be determined referring to
Table 1. In ICP-MS or MIP-MS analysis, analytical mass number should be determined referring to Table 1.
8.4.2.5 Measure each metal element in the photoresist test solution.
8.4.2.6 The observed data should be adjusted for the blank level and background correction.
8.5 Concentration of Trace Metal in Photoresist
8.5.1 The concentration of trace metal in a photoresist test solution is determined from the working curve.
8.5.2 Confirmation 3 — The observed concentration of photoresist test solution should be in the concentration
range of working curve.
9 Suggested Reporting Information
9.1 Company
9.2 Test date
9.3 Photoresist
9.3.1 Commercial name
9.3.2 Tone
9.3.3 Lot No.
9.4 Results
9.4.1 Element
9.4.2 Concentration (ppb)
9.4.3 Method of chemical analysis
9.4.4 Other information on chemical analysis should be added to the reporting results by mutual agreement between
users and suppliers.
SEMI P32-1104 © SEMI 1998, 2004 6
10 Related Documents
10.1 SEMI Standards
SEMI P12 — Determination of Iron, Zinc, Calcium,
Magnesium, Copper, Boron, Aluminum, Chromium,
Manganese, and Nickel in Positive Photoresists by
Inductively Coupled Plasma Emission Spectroscopy
(ICP)
SEMI P13 — Determination of Sodium and Potassium
in Positive Photoresists by Atomic Absorption
Spectroscopy
SEMI P14 — Determination of Tin in Positive
Photoresists by Graphite Furnace Atomic Absorption
Spectroscopy
NOTICE: SEMI makes no warranties or
representations as to the suitability of the standards set
forth herein for any particular application. The
determination of the suitability of the standard is solely
the responsibility of the user. Users are cautioned to
refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature
respecting any materials mentioned herein. These
standards are subject to change without notice.
The user’s attention is called to the possibility that
compliance with this standard may require use of
copyrighted material or of an invention covered by
patent rights. By publication of this standard, SEMI
takes no position respecting the validity of any patent
rights or copyrights asserted in connection with any
item mentioned in this standard. Users of this standard
are expressly advised that determination of any such
patent rights or copyrights, and the risk of infringement
of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
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the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI P33-0998 © SEMI 19981
SEMI P33-0998
PROVISIONAL SPECIFICATION FOR DEVELOPMENTAL 230 mm
SQUARE HARD SURFACE PHOTOMASK SUBSTRATES
1 Purpose
1.1 To define the dimensional requirements for
nominally square hard surface photomask substrates of
230 mm nominal edge length for research on, and
development of, process and manufacturing equipment,
pellicles, carriers, other accessory materials, and any
related mask designs.
2 Scope
2.1 This specification covers information pertaining to
glass substrates for 230 mm square hard surface
photomasks. This information includes, but is not
limited to, physical dimensions, testing criteria, and
measurement criteria.
3 Referenced Documents
3.1 ANSI/ASQC Standard
1
Z1.4 — Sampling Procedures and Tables for Inspection
by Attributes
3.2 ASTM Standard
2
E 228 — Test for Linear Thermal Expansion of Rigid
Solids with a Vitreous Silical Dilatometer
3.3 Federal Standard
3
209E — Clean Room and Work Station Requirements,
Controlled Environments
4 Terminology
4.1 230 mm — the nominal edge length for the reticle
generation defined in this specification. Also referred
to as “9 inch” size.
4.2 critical side — major side intended for patterning.
The critical side has no chamfered corner(s) (see
Section 9.2), and has flatness equal to or better than the
non-critical side (see Section 8.1).
4.3 non-critical side — major side not intended for
patterning. Any and all chamfered corners are on the
non-critical side (see Section 9.2, Figures 5 and 6).
1 American Society for Quality Control, 611 East Wisconsin Avenue,
Milwaukee, WI 53202
2 American Society for Testing & Materials, 100 Barr Harbor Drive,
West Conshohoken, PA 19428-2959
3 General Services Administrator, 4th and D Streets, SW, Room
6039, Washington D.C. 20407
NOTE: Selected terms relating to photomasking are given for
information only in Appendix 2, Related Information.
5 Ordering Information
5.1 Purchase orders for hard surface photomask
substrates furnished to this specification shall include
the following:
5.1.1 Nominal edge length, nominal thickness
dimension, edge criteria, and parallelism of major sides
(see Section 6);
5.1.2 Material (see Section 7);
5.1.3 Flatness quality area and flatness Total Indicated
Reading (TIR; see Section 8);
5.1.4 Visual quality area (see Section 9); and
5.1.5 Lot acceptance criteria (see Section 10).
6 Dimensions and Permissi ble Variations
6.1 The substrates shall conform to the dimensional
tolerances appropriate to the nominal edge length and
thickness as listed in Table 1. Dimensions are
illustrated in Figure 1, and a fixture for measuring the
squareness dimensions is shown in Figure 2.
6.2 Substrates shall have beveled edges. The edges
shall conform to the dimensional tolerances appropriate
to the nominal thickness listed in Table 2. Dimensions
are illustrated in Figure 3.
6.3 The major sides of square substrates shall be
parallel within 5.0 µm along both major axes.
Measurements are taken within the quality flatness area,
along both major axes. Calculation of parallelism is
illustrated in Figure 7.
7 Material Specifications
7.1 Substrate materials shall be specified “ultra low
thermal expansion” (ULTE). An example of ULTE
material is fused silica (quartz).
7.2 Selected physical properties of ULTE materials are
provided for information only in Appendix 1.
8 Flatness Specifications
8.1 Substrates shall be supplied with two major sides
having flatness (TIR) of 1, 2, or 5 µm over a square
quality flatness area as defined in Figure 4. Sides are
not required to have equivalent flatness. (NOTE: 0.5
µm is not yet available but is widely expected in the