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SEMI E129-1103 © SEMI 2003 7 that will come within 30.5 cm (12 inches) of ESD- sensitive items. Typical surfaces to measure would include constr uction materials, furnitu re, personnel, products, carriers, and equipment …
SEMI E129-1103 © SEMI 2003 6
8 Safety Precautions
8.1 Personnel — Static charges can create safety
hazards during some semiconductor production
processes.
8.1.1 ESA, ESD, and EMI events that result in the
jamming or breakage of product in high-speed
equipment may create a personnel hazard.
8.1.2 ESD events that produce sparks must be
prevented in areas that use flammable or explosive
chemicals or gases.
8.1.3 ESD events to personnel are usually not harmful,
but they may result in an unwanted reflex, or “startle”
reaction. This reflex may create a personnel hazard,
particularly in the vicinity of moving equipment or
where caustic chemicals are in use.
8.1.4 EMI resulting from ESD events may cause
unpredictable behavior of robotics or other moving
equipment that put personnel at risk.
8.1.5 It may be necessary to use additional static
charge control methods, beyond those used inside the
equipment, to minimize these personnel hazards.
8.2 Measurement Safety — Users should exercise
caution while making static charge measurements in the
vicinity of moving parts of production equipment, or in
areas where static potentials on ungrounded conductors
may exceed 30,000 V. Refer to SEMI E43 for
additional measurement safety considerations.
9 Test Specimen
9.1 The user, material supplier, facility
designer/builder, and equipment manufacturer should
agree upon and document:
• Type(s) of testing to be performed
• Location of the testing (e.g., in a test chamber or in
the actual use location)
• Who will do the testing
• Number and type of test samples
• Number of measurements
• Acceptable test results
9.2 The user, material supplier, facility
designer/builder, and equipment manufacturer should
agree upon and document all appropriate environmental
conditions (e.g., temperature, humidity, dew point,
airflow).
9.3 The user, material supplier, facility
designer/builder, and equipment manufacturer should
agree upon and document the operating history of
equipment prior to, or during testing (e.g., warm-up
time, type of carrier, number of products processed,
operating speed).
10 Preparation of Apparatus and Sample
10.1 Depending on the type of testing to be done,
consult the appropriate testing document for apparatus
and sample preparation. See Section 4.
11 Calibration and Standardization
11.1 Depending on the type of testing to be done,
consult the appropriate testing document for apparatus
calibration and verification. See Section 4.
12 Procedures
12.1 See Sections 6 and 7 and the appropriate test
methods of Section 4.
12.2 ESD Damage
12.2.1 Users should establish product damage
thresholds for their products. Measurement methods
for integrated circuits are described in SEMI E78
Related Information 1 and the documents contained in
Section 4. Appropriate measurement methods for ESD
damage to wafers, reticles, and other items may be
adapted from the instrumentation used in these test
methods.
12.2.2 In place of using the test methods referenced in
Section 12.2.1, users may decide to follow the
recommendations for acceptable electrostatic levels
contained in Section 12.5 Table 1, which are based on
product and reticle geometry. See Appendix 1 for more
information.
12.2.3 Measurements of ESD damage levels are made
in units of coulombs, or more conveniently in
nanocoulombs (nC = 10
-9
coulombs).
12.2.4 The Faraday Cup method is used to determine
the static charge levels on products, carriers and
equipment parts. See Section 7.1. Each item should be
transported to the Faraday Cup in a way that does not
alter its charge level. Consult the measurement
equipment manufacturer’s instructions for
recommendations on how to achieve this.
12.3 Electrostatic Field
12.3.1 Users should work with cleanroom designers,
material suppliers, equipment manufacturers and reticle
suppliers to determine ambient particle levels, product
exposure times during processing, and reticle damage
levels due to electric field.
12.3.2 Electrostatic field measurements should be
made at a minimum on all surfaces within the facility
SEMI E129-1103 © SEMI 2003 7
that will come within 30.5 cm (12 inches) of ESD-
sensitive items. Typical surfaces to measure would
include construction materials, furniture, personnel,
products, carriers, and equipment surfaces.
12.3.3 Measurements should be made in at least three
different locations on any item. Locations should be
separated by approximately three times the distance
between the measuring instrument and the measurement
location. For most electrostatic fieldmeters measuring
at 25.4 mm (1 inch), the measurement locations will be
76.2 mm (3 inches) apart. Refer to SEMI E43 for
additional measurement considerations.
12.3.4 Measurements of electrostatic field are
expressed in V/cm or V/inch. Typically, five
measurements should be sufficient to demonstrate
compliance with the selected electrostatic level.
12.4 All elements of the semiconductor factory,
including but not limited to construction materials,
furniture, equipment, personnel, product, reticles,
carriers, and transport and packaging materials, should
meet the following electrostatic levels shown in Section
12.5 Table 1 for protection from problems caused by
static charge.
12.5 It is desirable in this document to avoid confusion
with SEMI E78 sensitivity levels, as well as to
synchronize with the major changes in technology
mapped in the International Technology Roadmap for
Semiconductors (ITRS). Recommendations for
acceptable static charge levels are listed in Table 1 and
given for the major technology nodes of the 2003 ITRS
that relate to the size of the features on the wafer.
Table 1 Recommended Facility Electrostatic Levels
Year
Node
Electrostatic Discharge,
nC
Electrostatic Field,
V/cm V/inch
2000
180 nm
2.5–10 200 500
2002
130 nm
2.0 150 375
2003
100 nm
1.5 125 300
2004
90 nm
1.0 100 250
2007
65 nm
0.5 70 175
2009
50 nm
0.25 50 125
2012
32 nm
0.125 35 88
2015
25 nm
0.1 25 63
12.5.1 Since many decisions to use static control
materials will result in the permanent installation of
these materials, users may want to consider the eventual
use of their semiconductor facility in selecting the
acceptable electrostatic level. For example, at startup
the facility may be processing at 180-nm geometry, but
in five years it is anticipated to be at 90 nm. The
facility may need to be designed for the limits
recommended for the 90-nm use.
12.5.2 The levels in Table 1 assume that the
manufacturing facility is processing silicon
semiconductors. Manufacturers of specialized
components may need to choose lower levels.
Examples are manufacturers of gallium arsenide
semiconductors or magneto-resistive (MR) disk drive
read heads, those experiencing significant losses due to
contamination, or those using specialized equipment.
12.6 The levels listed in Table 1 have been determined
as the result of an analysis of working conditions, or
experiments done in operating semiconductor facilities.
Justifications for these levels are found in Appendix 1.
The actual levels to be used for any production area
may be decided by agreement between the user and
designer/builder of the facility.
12.7 Other levels may be appropriate under specific
operating conditions and for specific devices.
13 Calculations
13.1 A series of five measurements should be made.
The average of the five measurements should not
exceed the recommended level. No measurement
should exceed two times the recommended level.
14 Reporting Results
14.1 Data records should contain the following
information:
• Description of the materials or equipment under
test including model and serial numbers,
• Description of the factory operating conditions and
environment,
• Measurement equipment and last calibration date,
• Description of objects measured and measurement
locations,
• Humidity, temperature, and dew point at
measurement location when measurements were
made,
• Results of measurements,
• Personnel making the measurements, and
• Any other relevant comments.
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15 Test Method Precision and Accuracy
15.1 The test methods referenced in this document do
not guarantee precise measurements of static charge
levels. Similarly, maximum static charge levels
recommended in this document are not stated as precise
requirements. Accuracy of approximately ± 20% is
acceptable in all measuring instrumentation. At low
static charge levels, or for more accurate measurements,
alternative instrumentation and test methods may be
needed.
15.2 To evaluate low levels of electric field strength or
the voltage on an object, use an electrostatic fieldmeter
or electrostatic voltmeter with the resolution and
accuracy required. Under appropriate conditions,
electrostatic voltmeters exhibit a high degree of
accuracy and stability that is independent of the
distance from the charged object. The electrostatic
voltmeter probe can be located very close to a charged
surface without arc-over, and it is able to resolve the
field from a small charged object.