semi合集-English.pdf - 第7225页

SEMI MF43-0705 © SEMI 2003, 2005 8 10.2 Calculate the average resistivity at the temperature of m easurement as follows: 2 r f av      (8) 10.3 If necessary, c orrect the resistivity to a reference tem perature of 2…

100%1 / 7923
SEMI MF43-0705 © SEMI 2003, 2005 7
r
=
resistivity for reverse current, ·cm,
V
r
= potential drop across the two inner probes for reverse current, V, and
I
r
= reverse current, A.
10.1.3 For specimens of circular cross section with thickness more than one, but less than four, times the probe
spacing (that is, the distance between adjacent points of the four-probe array being used), calculate the ratio of
average specimen thickness, w, to average probe spacing,
,s and the ratio of average probe spacing, ,s to average
specimen diameter, D, and proceed as follows:
10.1.3.1 For specimens for which the ratio of thickness to probe spacing is in the range
:5.21
s
w
f
f
f
I
V
wF
s
w
F
2
and
r
r
r
I
V
wF
s
w
F
2
(6)
10.1.3.2 For specimens for which the ratio of thickness to probe spacing is in the range
:45.2
s
w
f
f
f
I
V
w
s
w
F
532.4
and
r
r
r
I
V
w
s
w
F
532.4
(7)
where
s
w
F
and F
2
are given in Tables 1 and 2, respectively.
NOTE 11: These geometric correction factors are approximate but are valid within 2% if the specimen diameter is greater than
25.4 mm (1 in.). For smaller diameter specimens, the factors are of unknown accuracy.
Table 1 Thickness Correction Factor,
)sF(w/ , as a
Function of the Ratio of Wafer Thickness, w, to
Average Probe Spacing,
.s
s
w
s
w
F
1.0 0.921
1.2 0.864
1.4 0.803
1.6 0.742
1.8 0.685
2.0 0.634
2.2 0.587
2.4 0.546
2.6 0.510
2.8 0.477
3.0 0.448
3.2 0.422
3.4 0.399
3.6 0.378
3.8 0.359
4.0 0.342
Table 2 Correction Factor, F
2
, as a Function of the
Ratio of Average Probe Spacing,
,s
to Wafer
Diameter, D
D
s
F
2
0 4.532
0.005 4.531
0.010 4.528
0.015 4.524
0.020 4.517
0.025 4.508
0.030 4.497
0.035 4.485
0.040 4.470
0.045 4.454
0.050 4.436
0.055 4.417
0.060 4.395
0.065 4.372
0.070 4.348
0.075 4.322
0.080 4.294
0.085 4.265
0.090 4.235
0.095 4.204
0.100 4.171
SEMI MF43-0705 © SEMI 2003, 2005 8
10.2 Calculate the average resistivity at the temperature of measurement as follows:
2
rf
av
(8)
10.3 If necessary, correct the resistivity to a reference temperature of 23C as follows:
)( 231
23
TC
T
av
(9)
where:
23
= resistivity corrected to 23C, ·cm,
av
= average resistivity at temperature of measurement, ·cm,
C
T
= temperature coefficient appropriate to specimen (see ¶3.1.4 and Note 3), and
T = temperature of measurement, °C.
NOTE 12: The temperature coefficients of resistivity cited here for germanium and silicon are valid for measurements taken in
range from 18 to 28°C.
NOTE 13: If desired, correction may be made for probes with unequal probe spacings by multiplying the average resistivity by
the probe spacing correction factor (F
sp
) (see Note 4) before correcting the resistivity to the reference temperature.
11 Report
11.1 For referee tests, report the following information:
11.1.1 Identification of test specimen,
11.1.2 Ambient temperature of test,
11.1.3 Probe spacing,
11.1.4 Method of determining cross-sectional area,
11.1.5 Method of surface preparation,
11.1.6 Instrumentation used to measure current and voltage,
11.1.7 Location of measurement in relation to a reference point on the specimen,
11.1.8 Magnitude of current,
11.1.9 Calculated resistivity for both current directions, and
11.1.10 Average resistivity at measurement temperature, and if computed, at 23C.
11.2 For routine tests, report the items in ¶¶11.1.1, 11.1.2, and 11.1.10 together with such other items listed above
as may be deemed significant.
12 Precision
12.1 Silicon bars and wafers with resistivity in the range from 5 to 20 ·cm were tested in a nine-laboratory round
robin conducted in 1965. No geometrical or temperature correction factors were applied. The multilaboratory
precisions, as estimated from three times the mean values of the relative sample standard deviations, were ±6% for
the two-probe test method (on bars) and ±8% for the four-probe test method (on wafers). The precision for other
resistivity ranges and other materials has not been established.
13 Keywords
13.1 germanium; resistivity; semiconductor; silicon
SEMI MF43-0705 © SEMI 2003, 2005 9
NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for any
particular application. The determination of the suitability of the standard is solely the responsibility of the user.
Users are cautioned to refer to manufacturer's instructions, product labels, product data sheets, and other relevant
literature, respecting any materials or equipment mentioned herein. These standards are subject to change without
notice.
By publication of this standard, Semiconductor Equipment and Materials International (SEMI) takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any items mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction of
the contents in whole or in part is forbidden without express written
consent of SEMI.