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SEMI M60-0305 © SEMI 2005 18 J (A/cm 2 ) Fail ure (%) Qbd (C/c m 2 ) at W eibull = 0 0.01 15.4 5.9 0.05 15.0 5.4 0.1 14.7 5.2 -5 -4 -3 -2 -1 0 1 2 3 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 Qbd (C/c m 2 ) Ln(-Ln(1-F)) 10mA 10m…

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SEMI M60-0305 © SEMI 2005 17
-5.00
-4.00
-3.00
-2.00
-1.00
0.00
1.00
2.00
3.00
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Qbd (C/cm
2
)
Ln(-Ln(1-F))
1mm2
1mm2
1mm2
5mm2
5mm2
5mm2
10mm2
10mm2
10mm2
Figure R1-3
Capacitor Area Dependence of Q
BD
. J=0.1A/cm
2
, 125ºC.
Table R1-1 Measurement Condition of Constant Current Stress
TDDB for Round Robin.
J
stress
(A
･
cm
2
)
Temp.(ºC)
0.1 RT/80/125
0.05 125
0.01 125
Figure R1-4
Gate Area Dependence of CCS-TDDB Measurement at 125ºC, 100mA/cm
2
in the W-mode Range of 2C/cm
2
or more. High Linearity in All TDDB Results Was Obtained in the W-mode Region.
-5.00
-4.00
-3.00
-2.00
-1.00
0.00
1.00
2.00
3.00
0.1110
Q bd (C /cm 2)
L n (- L n (1 - F ))
1m m 2
1m m 2
1m m 2
5m m 2
5m m 2
5m m 2
10m m 2
10m m 2
10m m 2
SEMI M60-0305 © SEMI 2005 18
J
(A/cm
2
)
Failure (%)
Qbd (C/cm
2
)
at Weibull = 0
0.01 15.4 5.9
0.05 15.0 5.4
0.1 14.7 5.2
-5
-4
-3
-2
-1
0
1
2
3
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Qbd (C/cm
2
)
Ln(-Ln(1-F))
10mA
10mA
10mA
50mA
50mA
50mA
100mA
100mA
100mA
Figure R1-5
Current Density Dependence of Q
BD
. 1mm
2
, 125ºC
-5.00
-4.00
-3.00
-2.00
-1.00
0.00
1.00
2.00
3.00
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Qbd (C/cm
2
)
Ln(-Ln(1-F))
R.T
R.T
R.T
85C
85C
85C
125C
125C
125C
Figure R1-6
Temperature Dependence of Q
BD
. J=0.1A/cm
2
, 125ºC
Table R1-2 Current Density Dependence of Q
BD
. (Area = 1mm
2
, Temperature = 125ºC)
SEMI M60-0305 © SEMI 2005 19
Table R1-3 Temperature Dependence. (Area = 1mm
2
, J = 0.1 A/cm
2
)
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Temp.
(degree)
Failure (%)
Qbd (C/cm
2
)
at Weibull = 0
r.t. 15.1 19.2
85 14.3 9.2
125 14.8 5.2
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