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SEMI G26-1296 E © SEMI 2002 4 6.6.2 Instrument Cond itions Typical operating conditions are: Excitation source 27 MHz plasma Carrier gas 99.999% Argon Sample flow 1 ml/min Power output 1000 watts Plasma temperature 8000°…

SEMI G29-1296

6.5.3 Apparatus

6.5.3.1 Ion chromatograph (Dionex or equivalent). The

chromatograph shall be equipped with an injection

valve, a 50–100 µ l sample loop, and shall be set up with

the following:

1. Guard Column

2. Separator Column

3. Chemical Suppressor Device

4. Conductivity Detector

6.5.4 Reagents

6.5.4.1 Water Purity — Water used in the preparation

of eluents, standards, and sample extraction shall

conform to ASTM D 1193.

6.5.4.2 Reagent Purity — Reagent grade chemicals

should be used in all tests.

6.5.4.3 Eluent/Regenerant Solutions — Should be

prepared in accordance with instrument manufacturer’s

instructions recommended for each column set.

6.5.4.4 Stock Solutions — Stock solutions (1 ml - 1 mg

- 1 ppm ion of interest) should be prepared according to

accepted practice, and as described in the instrument

manufacturer’s instructions.

6.5.4.5 Calibration Standards — Prepare a blank and

at least three (3) different calibration solutions

containing combination of anion/cations. These

solutions must be prepared in volumeric flasks (see

Table 1).

6.5.4.5.1 Prepare a standard solution I by diluting the

volume of each anion/cation stock solution as specified

in Table 1 together with 1 litre of water.

6.5.4.5.2 Prepare a standard solution II by diluting 20

ml of standard solution II to 100 ml with water (see

Table 1).

NOTE 6: If the concentrations of the sample ions are known,

or estimated, the concentration of calibration standard

solutions may be varied to better approximate or bracket

concentration range of interest.

6.5.5 Calibration

6.5.5.1 Analyze the blank and each of the prepared

calibration solutions described in Section 6.5.4.5.

6.5.5.2 Prepare analytical curves for each anion/cation

of interest by plotting on linear graph paper peak height

or peak area versus nominal concentrations of the

anion/cation calibration standard.

NOTE 7: Each analytical curve should be established using

only one (1) scale setting.

6.5.6 Procedure

6.5.6.1 Set-up the ion chromatograph according to the

manufacturer’s instructions.

NOTE 8: The range setting required for the analysis will

depend on the concentration of ions in the sample and should

be chosen accordingly. For these types of samples, operating

range from 30 to 30µ S/cm, full scale is most frqurntly used.

6.5.6.2 Equilibriate the system by pumping eluent

through the analytical system until a stable baseline is

obtained (approximately twenty (20) minutes).

6.5.6.3 Filter samples through a pre-washed 0.22 µ m

filter prior to analysis.

NOTE 9: Several types of syringe-tip filters are available

(Millipore or equivalent).

6.5.6.4 Load 2–3 ml of sample into the injection part

using a syringe. Inject the sample into the eluent stream

and record the ion chromatogram.

6.5.7 Calculations

6.5.7.1 Refer to the peak height or area for the

anions/cations of interest to the appropriate analytical

curves to determine the anion concentration.

6.6 Inductivity Coupled Argon Plasma

Spectrometry/ICP

6.6.1 Method Principle — Inductivity coupled Argon

Plasma (ICP) uses high frequency Argon Plasma to

excite sample constituents to 8000° K. Because the

plasma ionizes most atomic species, background

interferences are vastly reduced and linear response

over several orders of magnitude can be observed for

most elements. The sample extract is aspirated into the

plasma by means of a high purity argon carrier gas. The

resulting emissions are directed into the spectrometer

and signal strengths are read by photomultiplier tubes

placed at emission points in a focal curve. A computer

is used to scan each elemental channel many times a

second, and this output is sent to a printer in numerical

form. The cycle or time of analysis is usually about

seven (7) seconds. With this instrument, very little of

the extracted sample is consumed.

SEMI G26-1296

6.6.2 Instrument Conditions

Typical operating conditions are:

Excitation source 27 MHz plasma

Carrier gas 99.999% Argon

Sample flow 1 ml/min

Power output 1000 watts

Plasma temperature 8000° K

Slit width of Spectrometer 30 µ m

6.6.3 Measurement of Sodium, Potassium, and Antimony — A standard solution of ten (10) ppm of sodium,

potassium, and antimony should be prepared and cycled through the ICP instrument. The blank extract sample and

the unknown molding compound extracts are then run through the ICP. The values obtained for sample are corrected

by subtracting values obtained for the blank. With the ICP, sodium, potassium, and antimony can be analyzed with

sensitivities to the ten (10) PPB levels. Any additional elements present may be obtained on the same cycle with no

additional preparation.

Table 1 Preparation of Standard Solutions for Instrument Calibration

Standard Solution

Anion

ml of Stock Soln. Diluted

to 1000 ml

Anion Conc. mg/1

Standard Solution II

Standard Solution III

Chloride (Cl) 5 5 1 0.2

Phosphate (HPO

) 25 25 5 1.0

Bromide (Br

) 10 10 2 0.4

Nitrate (NO

30 30 6 1.2

Sulfate (SO

) 25 25 5 1.0

Cation

Sodium (NA

) 5 5 1 0.2

Ammonium (NH

) 5 5 1 0.2

Potassium (K

) 10 10 2 0.4

NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for

any particular application. The determination of the suitability of the standard is solely the responsibility of the user.

Users are cautioned to refer to manufacturer’s instructions, product labels, product data sheets, and other relevant

literature respecting any materials mentioned herein. These standards are subject to change without notice.

The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted

material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position

respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this

standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and

the risk of infringement of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI G30-88 © SEMI 1986, 19881

SEMI G30-88

TEST METHOD FOR JUNCTION-TO-CASE THERMAL RESISTANCE

MEASUREMENTS OF CERAMIC PACKAGES

1 Purpose

The purpose of this test is to determine the thermal

resistance of ceramic packages using thermal test chips.

This test method deals only with junction-to-case or

mounting surface measurements of thermal resistance

and limits itself to heat sink and fluid bath testing

environments. Following the guidelines outlined in this

test method, junction-to-case thermal resistance

measurements of ceramic packages using the heat sink

and fluid bath methods should give the same results

only under certain limited conditions (i.e., under

conditions that approximate unidirectional heat flow

through the chip and substrate to the preferred heat

removal surface). If discrepancies occur, the heat sink

mounting technique shall be considered as the referee

test method. The heat sink mounting method for

measuring junction-to-case thermal resistance will be a

conservative measure of the package’s ability to

transfer heat to the ambient environment because heat

sinking is provided only on one side of the package,

whereas the fluid bath mounting method has the

potential for equally cooling both sides of the package.

1.1 Definitions — The following d efinitions and

symbols shall apply for the purpose of this test:

a. case temperature, T

, in degrees Celsius. The case

temperature is the temperature at a specified

accessible reference point on the package in which

the microelectronic chip is mounted.

b. mounting surface temperature, T

, in degrees

Celsius. The mounting surface temperature is the

temperature of a specified point at the device-heat

sink mounting interface (or primary heat removal

surface).

c. junction temperature, T

, in degrees Celsius. The

term is used to denote the temperature of the

semiconductor junction in the microcircuit in which

the major part of the heat is generated. For purposes

of this test, the measured junction temperature is

only indicative of the temperature in the immediate

vicinity of the element used to sense the

temperature.

d. power dissipation, P

, in watts, is the heating power

applied to the device causing a junction-to-reference

point temperature difference.

e. thermal resistance, junction-to-specified reference

point, R

ΘJR

, in degrees Celsius/watt. The thermal

resistance of the microcircuit is the temperature

difference from the junction to some reference point

on the package divided by the power dissipation P

f. temperature-sensitive parameter, TSP, is the

temperature-dependent electrical characteristic of

the junction under test which can be calibrated with

respect to temperature and subsequently used to

detect the junction temperature of interest.

2 Apparatus

2.1 The apparatus required for the se tests shall include

the following as applicable to the specified test

procedures.

a. Thermocouple material shall be copper-constantan

(type T) or equivalent, for the temperature range

-100 to +300°C. The wire size shall be no larger

than AWG size 30. The junction of the

thermocouple shall be welded to form a bead rather

than soldered or twisted. The accuracy of the

thermocouple and associated measuring system

shall be ± 0.5°C.

b. Suitable electrical equipment as required to provide

controlled levels of conditioning power and to make

the specified measurements. The instrument used to

electrically measure the temperature-sensitive

parameter shall be capable of resolving a voltage

change of 0.5 mV.

c. Controlled temperature chamber, fluid bath, or heat

sink capable of maintaining the specified reference

point temperature to within ± 0.5°C of the preset

(measured) value. Typical temperature-controlled

heat sink and fluid bath assemblies are presented for

illustrative purposes only.

2.2 Heat Sink Assembly — A typical heat sink

assembly for mounting the microelectronic device

under test is shown in Figure 1. The primary heat sink

is water cooled using a temperature-controlled fluid

circulator bath. An adapter socket/heat sink is fastened

to the heat removal surface of the primary heat sink,

and has a special geometry to handle specific size

packages (e.g., flat packs, dual-in-line packages, chip

carriers). This adapter provides a repeatable and