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SEMI P23-0200 © SEMI 1993 , 2000 4 9.1.12 Missing Patter n 9.2 De fect Des ign Method 9.2.1 D esign t he fol lowing def ects, i n sq uares, for wiring patterns an d cont act hole pat terns. For edg e defects on diagonal …

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SEMI P23-0200 © SEMI 1993, 20003
Dimension on Mask Mask Name
5.00 micron 5000
3.00 micron 3000
2.50 micron 2500
2.00 micron 2000
1.50 micron 1500
1.00 micron 1000
0.80 micron 800
0.50 micron 500
8.4.1 The above list of design rule dimensions are
recommended values, and it is feasible to use a different
size.
8.4.2 When changing the design rule, chip spacing
(25.0 mm) should not change.
8.5 For the Wiring Pattern Chip, place a pattern with
uniform sub-cell coordinates: (x2,y1), (x4,y1), (x1,y2),
(x2,y2), (x4,y2), (x5,y2), (x1,y4), (x2,y4), (x4,y4),
(x5,y4), (x2,y5), (x4,y5). (See Figure 4.)
8.5.1 Patterns in a sub-cell using the uniform Wiring
Pattern should be as follows:
Sub-cell Coordinates Pattern to Be Used
(x2,y1) & (x4,y5) Wiring Type A (Figure 15)
(x4,y1) & (x2,y5) Wiring Type B (Figure 16)
(x1,y4) & (x5,y2) Wiring Type A rotated 90º
(x1,y2) & (x5,y4) Wiring Type B rotated 90º
(x2,y2) Wiring Type C (Figure 17)
(x4,y2) Wiring Type D (Figure 18)
(x2,y4) Wiring Type E (Figure 19)
(x4,y4) Wiring Type F (Figure 20)
8.5.2 Uniform patterns are placed inside a 50 micron-
square sub-cell.
8.5.3 For patterns in the Wiring Pattern which change
depending on the defect type ID, the same patterns
should be placed, without borders, in sub-cell
coordinates (x3,y1), (x3,y2), (x1,y3), (x2,y3), (x3,y3),
(x4,y3), (x5,y3), (x3,y4) and (x3,y5).
8.5.4 Pattern content will change as follows,
depending on the defect type ID:
Defect Type ID Pattern to Be Used
A, B, C, D Wiring Type A (Figure 15)
G, H, K, L, Q Wiring Type C (Figure 17)
I, J Wiring Type D (Figure 18)
E, F Wiring Type E (Figure 19)
M, N Wiring Type F (Figure 20)
O, P Wiring Type G (Figure 21)
8.5.4.1 Adjust the pattern position so that the defect is
placed in the center of sub-cell coordinates (x3,y3).
There may be instances where the placement of the
uniform patterns and the defect-inserted patterns vary
slightly.
8.5.4.2 Figure 5 is an example of placement of a Type
A Wiring Pattern.
8.6 For Contact Hole Pattern Chips, contact hole
patterns should be placed at all sub-cells except
coordinates (x1,y1), (x5,y1), (x1,y5) and (x5,y5). (See
Figures 6 and 22.)
8.6.1 For misplacement defects, in order to be
evaluated as an isolated field, place just one contact
hole pattern in the center of sub-cell coordinates (x3,
y3) and only in cells where the contact hole pattern
defect type ID is “M”. (See Figure 7.)
8.6.2 Adjust the whole pattern for contact hole
patterns so that the defect is placed in the center of sub-
cell coordinates (x3,y3).
8.7 Use a common spacing for placement of wiring
patterns and contact hole patterns.
8.7.1 For placement of patterns in design rule 1.50
microns (on mask), use a spacing of 14.0 microns in the
X-direction and 7.0 microns in the Y-direction.
8.7.2 The values for spacing should change
accordingly with a change in the design rule.
9 Defect
See Figures 23 and 24 for illustration.
9.1 Defect Type
9.1.1 Dot
9.1.2 Hole
9.1.3 Edge Extension
0 degree
45 degree
arctan (1/2) = 26.565 degree
9.1.4 Edge Intrusion
0 degree
45 degree
arctan (1/2) = 26.565 degree
9.1.5 Corner Extension
9.1.6 Corner Intrusion
9.1.7 Over size
9.1.8 Under size
9.1.9 Elongation
9.1.10 Truncation
9.1.11 Misplacement
SEMI P23-0200 © SEMI 1993, 2000 4
9.1.12 Missing Pattern
9.2 Defect Design Method
9.2.1 Design the following defects, in squares, for
wiring patterns and contact hole patterns. For edge
defects on diagonal lines, use a pattern designed in a
square and rotated to the angle of the diagonal. (In this
case, the shape of the defect may change in the design
data.) For corner defects, design using the edge length
as a design dimension and not the diagonal.
9.2.1.1 Dot
9.2.1.2 Hole
9.2.1.3 Edge Extension
0 degree
45 degree
arctan (1/2) = 26.565 degree
9.2.1.4 Edge Intrusion
0 degree
45 degree
arctan (1/2) = 26.565 degree
9.2.1.5 Corner Extension
9.2.1.6 Corner Intrusion
9.2.2 The following defects change only in the pattern
size along the Y-direction.
9.2.2.1 Wiring Pattern Over Size
9.2.2.2 Wiring Pattern Under Size
9.2.3 The following defects change in pattern size
along both X and Y.
9.2.3.1 Contact Hole Pattern Over Size
9.2.3.2 Contact Hole Pattern Under size
9.2.4 The following defects change only in pattern
length along the Y-direction in both wiring and contact
hole patterns.
9.2.4.1 Elongation
9.2.4.2 Truncation
9.2.5 For the following defects, in both wiring and
contact hole patterns, move the right half of the pattern
in the Y-direction only to form a step.
9.2.5.1 Misplacement Defect with ID ”K”
9.2.6 In the following defects, the pattern shape and
size are the same, with one whole isolated pattern
moving only in the Y-direction.
9.2.6.1 Misplacement defects, in both wiring and
contact hole patterns, which have the defect ID “L”.
9.2.6.2 Misplacement defects, in contact hole patterns,
with the defect ID ”M”.
9.2.7 The following single isolated pattern is
completely destroyed in both wiring and contact hole
patterns.
9.2.7.1 Missing Pattern
9.3 Fabricating Position for Program Defect
9.3.1 Fabricate according to Figure detailed drawing.
10 Program Defect Size
10.1 According to SEMI P22, mainly, two values are
to be used in defining size of defects. However, for the
following reason, one value will be used to describe
program defect size on this SEMI Standard P23 mask.
10.1.1 Defects used in evaluation are all program
defects and mainly designed in square shape.
10.1.2 When describing the capabilities of mask defect
inspection systems, it has become typical to describe
defect size which one value.
10.2 Due to various reasons (influences) in mask
manufacturing, it is not always possible to form all
program defects with the shape and size described in
the design.
10.3 SEMI Standard mask defect size is defined as
follows. (See Figures 23 and 24.)
Follow SEMI P22 for the values used below (S1, S2, X,
Y, a, b, c, d).
10.3.1 Dot & Hole
10.3.1.1 Defect Size is S1 or S2, whichever is larger.
10.3.2 Edge Extension & Intrusion
10.3.2.1 Defect Size is S2.
10.3.3 Corner Extension
10.3.3.1 Defect Size is the difference between the
reference pattern S1[Reference] and the defect pattern
S1[Defect]
( | S1[Reference] - S1[Defect] | ).
10.3.4 Corner Intrusion
10.3.4.1 Wiring Pattern
10.3.4.1.1 Defect Size is the difference between the
reference pattern S1[Reference] and the defect pattern
S1[Defect]
( | S1[Reference] - S1[Defect] | ).
SEMI P23-0200 © SEMI 1993, 20005
10.3.4.2 Contact Hole Pattern
10.3.4.2.1 As with Edge Intrusion in 10.3.2, Defect
Size is S2.
10.3.5 Over Size
10.3.5.1 Wiring Pattern
10.3.5.1.1 Since size only changes in the Y-direction,
Defect Size is (d-c).
10.3.5.2 Contact Hole Pattern
10.3.5.2.1 With “a” and “c” as the reference pattern
size, Defect Size is (b-a) or (d-c), whichever is larger.
10.3.6 Under Size
10.3.6.1 Wiring Pattern
10.3.6.1.1 Since size only changes in the Y-direction,
Defect Size is (d-c).
10.3.6.2 Contact Hole Pattern
10.3.6.2.1 With “a” and “c” as the reference pattern
size, Defect Size is (b-a) or (d-c), whichever is larger.
10.3.7 Elongation & Truncation
10.3.7.1 Since, in a program defect, the size only
changes in the Y-direction (S1), Defect Size is S1.
10.3.8 Misplacement
10.3.8.1 Since the program defect is only moving
along the Y-axis, Defect Size is Y.
10.3.9 Missing Pattern
10.3.9.1 With S1 and S2 as the reference pattern size,
Defect Size is S1 or S2, whichever is larger.
11 Light Intensity Adjustmen t Pattern
11.1 Light intensity adjustment patterns will be placed
in four areas in mask defect inspection systems. (See
Figure 1.)
11.2 A glass pattern will be placed in the center.
11.3 Around the circumference of the glass pattern, a
line and space pattern will be placed, 1 for 1, with the
same line width as the design rule (dimensions on
mask).
11.3.1 With 500 by 1,250 microns as one block, place
horizontal patterns on the left and right sides,
perpendicular patterns on the top and bottom. Also,
place a horizontal pattern on the lower left corner.
(See Figure 25.)
11.4 The circumference of the glass pattern and line &
space pattern should have at least 6,000 microns of
shade film.
12 Method for Use of Test Masks in
Evaluating Mask Defect Inspection System
12.1 Inspect all defect cells, or a portion of them
according to the inspection conditions of the mask
defect inspection system to be evaluated.
12.2 Perform at least 20 inspections.
12.3 Perform the inspection at least with a set
direction of 0º. It is also preferable that the inspection
be performed after rotating the set at 90º, 180º, and
270º.
12.4 When displaying the defect inspection sensitivity
for mask defect inspection system, display the defect
size of the smallest defect of each type which was
detected 100%. (See Figures 26 and 27.)