semi合集-English.pdf - 第7543页
SEMI MF1809-0704 © SEMI 2003, 2004 8 p type (100) Wafer; 1100 ° C, O 2 , 1 minute Oxidation; Modified Dash Etch; ~ 4 µ m removal Figure 15 Damage Induced Slip Dislocations, 400 × n type, (111) Wafer; 1100 ° C, O 2 , 1 mi…
SEMI MF1809-0704 © SEMI 2003, 2004 7
p type, 10 Ω·cm, (100) Wafer; 1100°C, O
2
, 8 hour Oxidation;
Modified Dash Etch; ~ 4 µm removal
Figure 9
Oxidation Induced Stacking Faults, 400
×
n type, 10 Ω·cm, (111) Wafer; 1100°C, O
2
, 8 hour Oxidation;
Modified Dash Etch; ~ 4 µm removal
Figure 10
Oxidation Induced Stacking Faults, 400
×
p type, 0.007 Ω·cm, (100) Wafer; 1100°C, O
2
, 8 hour
Oxidation; Modified Dash Etch; ~ 5 µm removal
Figure 11
Oxidation Induced Stacking Faults, 400
×
p type, <0.02 Ω·cm, (100) Wafer; 1100°C, O
2
, 8 hour
Oxidation; Modified Dash Etch; ~ 5 µm removal
Figure 12
Oxidation Induced Stacking Faults, 400
×
p/p
+
(100) Epitaxial Wafer; Modified Dash Etch; ~ 4 µm
removal
Figure 13
Slip Dislocations, 400
×
n/n
+
(111) Epitaxial Wafer; Modified Dash Etch; ~ 4 µm
removal
Figure 14
Slip Dislocations, Epitaxial Stacking Faults, and
Shallow Pits, 400
×
SEMI MF1809-0704 © SEMI 2003, 2004 8
p type (100) Wafer; 1100°C, O
2
, 1 minute Oxidation;
Modified Dash Etch; ~ 4 µm removal
Figure 15
Damage Induced Slip Dislocations, 400
×
n type, (111) Wafer; 1100°C, O
2
, 1 minute Oxidation;
Modified Dash Etch; ~ 4 µm removal
Figure 16
Damage Induced Slip Dislocations, 400
×
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Secco
Etch with Agitation; ~ 4 µm removal
Figure 17
Oxidation Stacking Fault, 1000×
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Secco
Etch with Agitation; ~ 4 µm removal
Figure 18
Oxidation Stacking Fault, 400
×
(100) Wafer; Secco Etch without Agitation; ~ 8 µm removal
Figure 19
Flow Pattern Defect, 200
×
(100) Wafer; Secco Etch with Agitation; ~ 4 µm removal
Figure 20
Epitaxial Stacking Fault, 150
×
SEMI MF1809-0704 © SEMI 2003, 2004 9
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Secco
Etch with Agitation; ~ 15 µm removal
Figure 21
Bulk Oxidation Stacking Fault, 200
×
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Secco
Etch with Agitation; ~ 15 µm removal
Figure 22
Scratch Induced Oxidation Stacking Faults, 100
×
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Wright
Etch with Agitation
Figure 23
Damage Induced Oxidation Stacking Fault, 1000×
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Wright
Etch with Agitation
Figure 24
Bulk Oxidation Stacking Fault, 1000
×
Boron doped (100) Wafer; 1100° C Steam, 80 minute
Oxidation; Wright Etch with Agitation
Figure 25
Scratch Induced Oxidation Stacking Faults, 500
×
Antimony doped (100) Wafer; 1100° C Steam, 80 minute
Oxidation; Wright Etch with Agitation
Figure 26
Scratch Induced Oxidation Stacking Faults, 500
×