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SEMI M6-1000 © SEMI 1981, 2000 7 A A B C C DD D D Figure 2 Pseudo-Square M onocrystalline Phot ovoltaic Solar Cell Silicon Wafer Di mensions Table 3 Pseudo-Squ are Monocry stalline Photovoltaic Solar Cell Si licon Wafer …

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SEMI M6-1000 © SEMI 1981, 2000 6
A
B
C
D
Figure 1
Rectangular Mainly Square Photovoltaic Solar Cell Silicon Wafer Dimensions
Table 2 Rectangular Mainly Square Photovoltaic Solar Cell Silicon Wafer Dimensions (letters as in Figure 1)
Nominal Size (mm) Dimensions (mm)
ABCD
Max. Min. Max. Min. Max. Min. Max. Min.
100 101 99 101 99 142.8 140.0 2.0 0.5
125 126 124 126 124 187.2 175.4 2.0 0.5
150 151 149 151 149 213.5 210.7 2.0 0.5
200 201 199 201 199 284.3 281.4 2.0 0.5
SEMI M6-1000 © SEMI 1981, 20007
A
A
B
C
CDD
D
D
Figure 2
Pseudo-Square Monocrystalline Photovoltaic Solar Cell Silicon Wafer Dimensions
Table 3 Pseudo-Square Monocrystalline Photovoltaic Solar Cell Silicon Wafer Dimensions (letters as in
Figure 2)
Nominal size (mm) Dimensions (mm)
ABCD
Min. Max. Min. Max. Min. Max. Min. Max.
100 99 101 124 126 71.9 77.9 10.6 14.6
125 124 126 149 151 79.5 86.2 23.2 28.9
150 149 151 174 176 86.4 93.7 27.6 32.3
SEMI M6-1000 © SEMI 1981, 2000 8
APPENDIX 1
NOTE: The material in this appendix is an official part of SEMI M6 and was approved by full letter ballot procedures on July 28,
2000 by the European Regional Standards Committee.
A1-1 Crystal Orientation of Monocrystalline silicon
wafers
A1-1.1 A typical crystal orientation fo r monocrystal-
line silicon wafers is <100>.in the plane of the wafer.
A1-2 Wafer resistivity
A1-2.1 Typical wafer resistivity is between 0.5 -cm
and 2 -cm.
A1-3 Oxygen and Carbon Contents
A1-3.1 Typical values.
A-1.3.1.1 Interstitial oxygen < l × 10
l8
at /cm
3
for CZ
material and less than 8 × 10
17
at/cm
3
for multicrystal-
line wafers.
A-1.3.1.2 Substitutional carbon < 5 × 10
l7
at/cm
3
for
CZ and 1 × 10
l8
at/cm
3
for multicrystalline material.
A1-4 Lifetime and Minority Carrier Diffusion Length
A1-4.1 Typical minority carrier lifetim e values for
wafers used in the solar cell manufacturing process lie
in a range between 1 µs and 20 µs.
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