semi合集-English.pdf - 第5182页

SEMI M33-0998 © SE MI 1998 9 Furuka wa, Ad vance d in X-r ay Analyti c Jap an, 2 6s, 1 9– 24, 1995 Statisti cal Process Control in Microelectronics Manufactur ing — W. A. Le vinso n, Se mico nd uctor Intern atio nal , 19…

SEMI M33-0998 © SEMI 1998 8

the recovery rate of the VPD treatment and the

scanning solution as described in Section 15.19 of this

document. The relative error is to be calculated by:

i ,VPD

ℜ

ℜ

ℜ

ℜ

dRSF

RSF

ℜ

ℜ

ℜ

ℜ

ℜ

ℜ

ℜ

ℜ

ℜ

ℜ

ℜ

ℜ

ℜ

ℜ

ℜ

ℜ

ℜ

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ℜ

ℜ

ℜ

ℜ

ℜ

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ℜ

ℜ

ℜ

ℜ

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ℜ

ℜ

ℜ

14.3 Relative error of the reference droplet standard is

determined by the error of the micropipette aliquot (V)

and of the stock solution (c

ℜ

ℜ

ℜ

ℜ



ℜ

ℜ

ℜ

ℜ

ℜ



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ℜ

14.4 The relative error of areal concentrations below

the concentration of the calibration standard reference

are strongly dependent upon the relative error of the

micropipette aliquots. In the given range bias due to

crystallization and/or mass absorption can be

anticipated to be less than 1% as described in Sections

15.6 and 15.11 of this document.

14.5

Reproducibility of the measure ment system must

be tested with calibration standard reference in five

complete analysis cycles (load-analyze-unload). The

standard deviation of the 5 results shall not exceed

more than 10% of the theoretical value of the standard

deviation of the respective Poisson statistics

Nx. For

long term reproducibility, please refer to Section 2.6.

14.6 The minimum sample size for controlling the

wafer-to-wafer reproducibility of the complete

procedure must consist of a group of 3 wafers of the

very same polishing and/or cleaning batch as described

in Section 15.20 of this document. Tolerated standard

deviation of 3 groups should be defined by the

interested parties.

14.7

In interlaboratory tests (round robin), the

reproducibility of the method can preferably be

evaluated in accordance with DIN ISO 5725 or ASTM

E 691.

NOTE: Report reproducibility in accordance with this

document. Calibration accuracy was found to be within 10%

relative standard deviation for K, Ca, Ti, Cr, Fe, and Cu

among five TXRF stations as stated in Section 15.21 of this

document. W and other compounds forming volatile fluorides

shall not be analyzed after VPD because of low recovery

rates.

15 References

Analytical Determination of Fe in Thin SiO(2) Layers

on Si Wafers by Atomic Absorption Spectroscopy — M.

Briska, in Technical Disclosure Bulletine (IBM), 06–

1977, p. 227

Application of Total Reflection X-Ray Fluorescence

Analysis for Metallic Trace Impurities on Silicon Wafer

Surfaces

— P. Eichinger, H. J. Rath, and H. Schwenke,

ASTM STP 990, ASTM 1989, pp. 305–13

Automated TXRF Analysis in Silicium Manufacturing

— S. Pahlke, L. Kotz, E. Heindl, and P. Eichinger, PV

98–1, The Electrochemical Society, 1998

Basic Features of Total Reflection X-Ray Fluorescence

Analysis on Silicon Wafers — W. Berneike,

Spectrochimica Acta 48B (2), 269–75, 1993

Calibration Accuracy of Different ATOMIKA TXRF

8010 Instruments — P. W. Mertens, S. De Gendt, and

K. Kenis, IIAP-UCP Meeting, IMEC, September 26,

1996, Leuven, Belgium

Calibration of TXRF Equipment — J. Knoth, H.

Schwenke, and P. Eichinger, Proceedings 2nd

International Symposium Ultra-clean Processing of Si

Surface, IMEC-Acco 1994, pp. 107–10

Chemical Analysis of Metallic Impurity on the Surface

of Silicon Wafers — T. Shiraiwa, N. Fujino, S. Sumita,

and Y. Tanizoe, AST STP No. 850 NBS/IEEE, 1987, p.

314

Determination of the Critical Thickness and the

Sensitivity for Thin-Film Analysis by Total Reflection

X-Ray Fluorescence Spectrometry

— R.

Klockenkämper and A. von Bohlen, Spectrochimica

Acta 48B (5), 461–9, 1989

Introduction to Control Charts in the Analytical

Laboratory — SPC, E. Mullins, Analyst, 119, 369–75,

1994

Is My Calibration Linear? — Analytical Methods

Commission — Analyst 119, 2363-6, 1994

A Modification of the Linear Least-Squares Fitting

Method which Provides Continuum Suppression — F.

H. Schamber, X-ray Fluorescence Analysis, Editor, T.

Doubay Ann Arbor Science Publication Ann Arbor MI,

1977, pp. 241–257

Origins of Spurious Peaks of Total Reflection X-Ray

Fluorescence Analysis of Si Wafers Excited by

Monochromatic X-Ray Beam W-Lß

— K. Yakushiji, S.

Ohkawa, A. Yoshinaga, and J. Harada, Japan Journal

Applied Physics, 33 (2), Part 1, 1130–5, 1994

Standardization of TXRF Using Microdroplet Samples

— L. Fabry, S. Pahlke, L. Kotz, Y. Adachi, S.

SEMI M33-0998 © SEMI 19989

Furukawa, Advanced in X-ray Analytic Japan, 26s, 19–

24, 1995

Statistical Process Control in Microelectronics

Manufacturing — W. A. Levinson, Semiconductor

International, 1994 November, pp. 95–102

Sub-ppm Monitoring of Transition Metal

Contamination on Silicon Wafer Surfaces by VPD-

TXRF

— A. Huber, H. J. Rath, P. Eichinger, T. Bauer,

L. Kotz, and R. Staudigl, PV 88–20, The

Electrochemical Society, 1988, p. 109

Theory of Analytical Chemistry — K.S. Booksh and B.

R. Kowalski, Journal Analytical Chemistry 66A (15),

782–91, 1994

Trace-Analytical Methods for Monitoring

Contamination in Semiconductor-Grade Si

Manufacturing — L. Fabry, S. Pahlke, L. Kotz, and G.

Tölg Fresenius Journal Analytical Chemistry, 349, 260–

71, 1994

TXRF in the Daily Routine — L. Fabry, S. Pahlke, L.

Kotz, E. Schemmel, and W. Berneike, PV 93–15, The

Electrochemical Society, 1993, pp. 232–9

Ultra-Trace Analysis of Metallic Contamination on

Silicon Wafer Surfaces by Vapor Phase

Decomposition/Total Reflection X-Ray Fluorescence

(VPD/TXRF)

— C. Neumann and P. Eichinger,

Spectrochimica, Acta 46B (19), 1360–77, 1991

Verfahren Zum Schutz Von Polierten Oberflächen — I.

Lampert, Europe Patent 0 222 400 (11/13/86)

NOTICE: These standards do not purport to address

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responsibility of the user of these standards to establish

appropriate safety and health practices and determine

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suitability of the standards set forth herein for any

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suitability of the standard is solely the responsibility of

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other relevant literature respecting any materials

mentioned herein. These standards are subject to

change without notice.

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compliance with this standard may require use of

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takes no position respecting the validity of any patent

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item mentioned in this standard. Users of this standard

are expressly advised that determination of any such

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of such rights, are entirely their own responsibility.

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SEMI M34-0299

GUIDE FOR SPECIFYING SIMOX WAFERS

1. Purpose

1.1 This guide is for specification of SIMOX

(separation by implantation of oxygen) wafers with less

than 0.5 µm silicon film thickness used for

semiconductor device manufacture. These speci-

fications define the generic characteristics of SIMOX

SOI wafers; the specific values for measured

parameters will be determined by agreement between

the user and supplier for the application. By defining

parameters, inspection procedures, and acceptance

criteria, both users and suppliers may uniformly define

product characteristics and quality requirements.

2. Scope

2.1 The primary standardized properties set forth in

this specification relate to physical and electrical

characteristics of SIMOX wafers.

3. Referenced Documents

3.1 SEMI Standards

SEMI M1 — Specifications for Polished Mono-

crystalline Silicon Wafers

SEMI M22 — Specification for Dielectrically Isolated

(DI) Wafers

3.2 ASTM Documents

Practice E 122 (vol. 14.02) — Practice for Choice of

Sample Size to Estimate Average Quality of a Lot or

Process

F 154 (vol. 10.05) — Standard Practices and

Nomenclature for Indentification of Structures and

Contaminants Seen on Specular Silicon Surfaces

F 523 (vol. 10.05) — Standard Practice for Unaided

Visual Inspection of Polished Silicon Slices

3.3 Other Standards

ANSI/ASQC Z1.4 — Sampling Procedures and Tables

for Inspection by Attributes

1 American Society for Testing and Materials, 100 Barr Harbor

Drive, West Conshohoken, PA 19428-2959

2 American Society for Quality Control, 611 East Wisconsin Avenue,

Milwaukee, WI 53202

4. Terminology

4.1 Acronyms

4.1.1 BOX  Buried Oxide

4.1.2 SIMOX — Separation by Implantation of

Oxygen

4.1.3 SOS  Silicon on Sapphire

4.2 Definitions

4.2.1 buried oxide  The oxide layer that is formed

by the oxygen implant.

4.2.2 SIMOX layer  The thin silicon, layer above the

BOX. This is also referred to as top silicon or

superficial silicon.

4.2.3 substrate — The supporting material: silicon for

SIMOX.

5. Requirements

5.1 The complete specification for the starting

substrate to produce SOI wafers includes all general

requirements of SEMI M1 or SEMI M3, as appli-cable.

5.2 In addition, the parameters listed in Table 1 shall

be specified, as applicable. For example, specifi-cation

of BOX thickness is not applicable for SOS. The

specific values for parameters listed are to be specified

by agreement between user and supplier for specific

uses and specific wafer technologies.

5.3 The parameters of Table 1 apply to the final SOI

wafer. Parameters for the starting material may be

specified by agreement between user and supplier using

other standards (e.g., SEMI M1 or SEMI M3, as

appropriate). Additional parameters shall be nego-tiated

between user and supplier, as needed.

6. Sampling Plan

6.1 Unless otherwise specified, ASTM Practice E 122

shall be used. When so specified, appropriate sample

sizes shall be selected from each lot in accordance with

ANSI/ASQC Z1.4. Each quality characteristic shall be

assigned an acceptable quality level (AQL) of lot

tolerance percent defective (LTPD) value in accordance

with ANSI/ASQC Z1.4 definitions for critical, major,

and minor classi-fications. If desired and so specified in

the contract or order, each of these classifications may

alternatively be assigned cumulative AQL or LTPD

values. Inspection levels shall be agreed upon between

the user and supplier.