semi合集-English.pdf - 第5208页

SEMI M38-1104 © SEMI 1999, 2004 7 Item Mechanical Furna ce Particle Lithography Iron Unspecified Customer specified Unspecified Nickel Unspecified Customer specified Unspecified Copper Unspecified Customer specified Unsp…

100%1 / 7923
SEMI M38-1104 © SEMI 1999, 2004 6
Item Mechanical Furnace Particle Lithography
4.5 Swirl Unspecified
4.6 Shallow Pits Unspecified
4.7 OISF Unspecified
4.8 Oxide Precipitates Unspecified
5.0
Wafer Preparation Characteristics
5.1 Wafer ID Marking Customer specified
5.2 Front Surface Thin Films Unspecified None Unspecified None
5.3 Denuded Zone Unspecified
5.4 Extrinsic Gettering Unspecified None Unspecified None
5.5 Backseal Unspecified None Unspecified None
5.6 Annealing Unspecified
6.0
Mechanical Characteristics
6.1 Diameter
2.00 inch ± 0.020 inch
3.00 inch ± 0.025 inch
100 mm ± 0.50 mm
125 mm ± 0.50 mm
6.2 Primary Flat/Notch Dimension As-supplied
6.3 Primary Flat/Notch Orientation As-supplied
6.4 Secondary Flat Dimension (if applicable) As-supplied
6.5 Secondary Flat Location (if applicable) As-supplied
6.6 Edge Profile Unspecified
6.7 Thickness
2.00 inch 0.008–0.013 in
3.00 inch 0.012–0.018 in
100 mm (SEMI M1.5) 432–575 µm
100 mm (SEMI M1.6) 533–675 µm
125 mm 533–675 µm
6.8 Thickness Variation (TTV) Unspecified
6.9 Surface Orientation As-supplied
6.10 Bow Unspecified
6.11 Warp Unspecified
6.12 Sori Unspecified Customer
specified
6.13 Flatness/Global Unspecified Customer
specified
6.14 Flatness/Site Unspecified Customer
specified
7.0
Front Surface Chemistry
7.1 Surface Metal Contamination
Sodium Unspecified Customer
specified
Unspecified
Aluminum Unspecified Customer
specified
Unspecified
Potassium Unspecified Customer
specified
Unspecified
Chromium Unspecified Customer
specified
Unspecified
SEMI M38-1104 © SEMI 1999, 2004 7
Item Mechanical Furnace Particle Lithography
Iron Unspecified Customer
specified
Unspecified
Nickel Unspecified Customer
specified
Unspecified
Copper Unspecified Customer
specified
Unspecified
Zinc Unspecified Customer
specified
Unspecified
7.2 Surface Organics Unspecified
8.0
Front Surface Visual Characteristics
8.1 Scratches
Number of Unspecified 2
Cumulative length Unspecified 20 mm
8.2 Pits Unspecified Customer specified
8.3 Haze Unspecified Customer specified
8.4 Localized Light Scatters Unspecified
0.19/cm
2
@ customer specified size
8.5 Contamination/area Unspecified None
8.6 Edge Chips Unspecified None
8.7 Edge Cracks Unspecified None
8.8 Cracks, Crow's feet Unspecified None
8.8 Cracks, Crow's feet
8.9 Craters Unspecified None
8.10 Dimples Unspecified None
8.11 Grooves Unspecified None
8.12 Mounds Unspecified None
8.13 Orange Peel Unspecified None
8.14 Saw Marks Unspecified None
9.0
Back Surface Characteristics
9.1 Edge Chips Unspecified None
9.6 Roughness Unspecified Customer specified
9.7 Brightness (gloss) Unspecified
9.8 Localized Light Scatterers Unspecified Customer specified
9.9 Scratches
Number of Unspecified Customer specified
Cumulative length Unspecified Customer specified
Table 3 Guide for Specification of Polished Reclaim Wafers for 180 nm and 130 nm Technology Generations
Item 200 mm Wafers for 180 nm 300 mm Wafers for 130 nm
1.0
General Characteristics
1.1 Growth Method CZ or MCZ
1.2 Crystal Orientation {100}
1.3 Conductivity Type p
1.4 Dopant Boron
1.5 Nominal Edge Exclusion 3 mm (See
#1
)
2.0
Electrical Characteristics
2.1 Resistivity
0.5–50.0 ·cm
2.2 Radial Resistivity Variation Unspecified
SEMI M38-1104 © SEMI 1999, 2004 8
Item 200 mm Wafers for 180 nm 300 mm Wafers for 130 nm
2.3 Resistivity Striations Unspecified
2.4 Minority Carrier Recombination Lifetime Unspecified
3.0
Chemical Characteristics
3.1.1 Oxygen Concentration Unspecified
3.2 Radial Oxygen Variation Unspecified
3.3 Carbon Concentration Unspecified
4.0
Structural Characteristics
4.2 Slip None
4.3 Lineage None
4.4 Twins None
4.5 Swirl Unspecified
4.6 Shallow pits Unspecified
4.7 Oxidation-Induced Stacking Faults (OISF) Unspecified
4.8 Oxide Precipitates Unspecified
5.0
Wafer Preparation Characteristics
5.1 Wafer ID Marking Customer specified
5.2 Front Surface Thin Films None
5.3 Denuded Zone None
5.4 Extrinsic Gettering None
5.5 Backseal None
6.0
Mechanical Characteristics
6.1 Diameter
200 0.2 mm 300 0.2 mm
6.2 Primary Fiducial Location See SEMI M1.9 See SEMI M1.15
6.3 Primary Fiducial Dimension See SEMI M1.9 See SEMI M1.15
6.7 Thickness >650 µm (See
#2
)
6.8 Thickness Variation (TTV) 10 µm max. 25 µm max.
6.9 Wafer Surface Orientation
{100} 1°
6.11 Warp Customer specified
6.12 Sori Unspecified
6.14 Flatness/Site Unspecified (See
#3
)
7.0
Front Surface Chemistry
7.1 Surface Metal Contamination
Sodium <1 × 10
11
/cm
2
Aluminum <1 × 10
11
/cm
2
1.8 × 10
11
/cm
2
Chromium <1 × 10
11
/cm
2
Iron <1 × 10
11
/cm
2
Nickel <1 × 10
11
/cm
2
Copper <1 × 10
11
/cm
2
Zinc <1 × 10
11
/cm
2
Calcium <1 × 10
11
/cm
2
8.0
Front Surface Criteria
8.1A Scratches (macro) – total length None
8.1B Scratches (micro) – total length <0.10 × Diameter <0.50 × Diameter
8.2 Pits None
8.3 Haze None
8.4 Localized Light Scatterers
<0.20/cm
2
@ 0.20 µm
(See
#4
)
8.5 Contamination/Area None
8.6 Edge Chips None