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SEMI M57-0705 © SEMI 2004, 2005 11 supplier is not required t o perform the appropriate t ests in §7 . However, if the customer pe rforms the t est and the material fails to meet the requirement, th e material may be sub…

SEMI M57-0705 © SEMI 2004, 2005 10

Test in accordance with SEMI MF951, Plan A1, A2, or A3, as agreed between supplier and customer.

The value of background carbon concentration is valid only if the crystal is not intentionally co-doped with carbon (see Item 2-1.7).

200 mm diameter wafers may be used, as agreed between supplier & customer.

Gloss as measured in accordance with ASTM Test Method D 523 or JIS Z 8741 with visible illumination at a 60° angle of incidence

referenced to a mirror polished silicon wafer front surface. This metric may not describe the back surface finish adequately to establish

detectability of small localized light scatterers (LLSs). If it is necessary to detect LLSs smaller than 0.25 µm LSE, another quantitative measure

of surface finish may optionally be indicated by specifying the rms microroughness over a specified spatial frequency (or wavelength) range.

Because a standardized test method has not yet been developed for this metric, both values and test procedures shall be agreed upon between

supplier and customer.

If specified as polished, this term is meant to imply a surface condition and not a particular processing technique. If desired, a quantitative

measure of surface finish may optionally be indicated by specifying the rms microroughness over a specified spatial frequency (or wavelength)

range. Because a standardized test method has not yet been developed for this metric, both values and test procedures, including sampling plan

and detrending procedures, shall be agreed upon between supplier and purchaser.

Warp corrected for gravitational effects. However, warp is not an adequate wafer shape specification for all applications.

Determine in accordance with SEMI MF1530 with the following set up parameters: Site size, 26 mm  8 mm; x-offset = 0 mm; and either %

usable area = 100% with full sites only or % usable area 95% with partial sites included, as per agreement between supplier and customer.

SFQR with a site size of 26 mm × 8 mm is approximately equal to SFSR with a site size of 26 mm × 32 mm. The smaller site allows more

coverage of the FQA than the larger site. The value of site flatness is taken from the ITRS Starting Materials Table.

Surface metal measurement variation can be significant. Measurement results are frequently larger than the actual value. Processes are

normally controlled with median values to reduce the impact of the measurement variation.

#10

Haze, Terracing, Surface micro-roughness, Nanotopography, shallow pits, and other attributes.

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Back surface defects that relate to the support (such as, chuck etc.) provided to the back surface of the wafer.

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Bulk iron (Fe) may be characterized by SPV technique. For details, refer to SEMI MF391.

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Surface boron depletion, dissolved hydrogen in the case of hydrogen annealed wafer, post-annealed oxygen, silicon nitride precipitates and

defects in the case of nitrogen-doped silicon.

7 Sampling

7.1 Unless otherwise specified, ASTM Practice E 122 shall be used to define the sampling plan. When so specified,

appropriate sample sizes shall be selected from each lot in accordance with ANSI/ASQC Z1.4. Each quality

characteristic shall be assigned an acceptable quality level (AQL) or lot tolerance percent defective (LTPD) value in

accordance with ANSI/ASQC Z1.4 definitions for critical, major, and minor classifications. If desired and so

specified in the contract or order, each of these classifications may alternatively be assigned cumulative AQL or

LTPD values. Inspection levels shall be agreed upon between the supplier and the purchaser.

8 Test Methods

8.1 Measurements shall be made or certifiable to one of the SEMI, ASTM, JEITA, JIS, or DIN standard test

methods for the item as selected from the Silicon Wafer Specification Format for Order Entry, Parts 2 and 5, located

in Table 1 of SEMI M1 and Table 1 herein, respectively, and specified in the purchase order.

8.2 If several different standard test methods for an item are commonly used within a region, it is particularly

important that the applicable method of test be identified in the purchase order.

8.3 If no method of test is specified in the purchase order and if standard test methods from different geographic

regions are available, the default method shall be a method in common usage for the region of the purchaser of the

wafer.

8.4 If no standard test method for an item is available, the test procedure to be used must be agreed upon between

supplier and customer.

8.5 Information about the various test methods cited is provided in Related Information 2 of SEMI M1 together

with information about some additional test methods no longer in wide use throughout the industry.

9 Certification

9.1 Upon request of the purchaser in the contract or order, a manufacturer’s or supplier’s certification that the

material was manufactured and tested in accordance with this specification, together with a report of the test results,

shall be furnished at the time of shipment.

9.2 In the interest of controlling inspection costs, the supplier and the customer may agree that the material shall be

certified as “capable of meeting” certain requirements. In this context, “capable of meeting” shall signify that the

SEMI M57-0705 © SEMI 2004, 2005 11

supplier is not required to perform the appropriate tests in §7. However, if the customer performs the test and the

material fails to meet the requirement, the material may be subject to rejection.

10 Product Labeling

10.1 The wafers supplied under these specifications shall be identified by appropriately labeling the outside of each

box or other container and each subdivision thereof in which it may reasonably be expected that the wafers will be

stored prior to further processing. Identification shall include as a minimum the nominal diameter, conductivity

type, dopant, orientation, resistivity range, and lot number. The lot number, either (1) assigned by the original

manufacturer of the wafers, or (2) assigned subsequent to wafer manufacture but providing reference to the original

lot number, shall provide easy access to information concerning the fabrication history of the particular wafers in

that lot. Such information shall be retained on file at the manufacturer’s facility for at least one month after that

particular lot has been accepted by the customer.

10.2 Alternatively, if agreed upon between supplier and customer, one of the box labeling schemes in SEMI T3

shall be used and the information listed in ¶10.1 that is not included on the label shall be retained in the supplier’s

data base for at least one month after that particular lot has been accepted by the customer.

10.3 Wafers of 300 mm diameter shall be shipped in packages labeled in accordance with SEMI M45.

11 Packing and Shipping Container Labeling

11.1 Special packing requirements shall be subject to agreement between the supplier and customer. Otherwise, all

wafers shall be handled, inspected, and packed in such a manner as to avoid chipping, scratches, and contamination

and in accordance with the best industry practices to provide ample protection against damage during shipment.

11.2 Wafers of 300 mm diameter shall be shipped in accordance with SEMI M45.

11.3 Unless otherwise indicated in the purchase order, all outside wafer shipping containers shall be labeled in

accordance with ANSI/EIA 556-B.

NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for any

particular application. The determination of the suitability of the standard is solely the responsibility of the user.

Users are cautioned to refer to manufacturer's instructions, product labels, product data sheets, and other relevant

literature, respecting any materials or equipment mentioned herein. These standards are subject to change without

notice.

By publication of this standard, Semiconductor Equipment and Materials International (SEMI) takes no position

respecting the validity of any patent rights or copyrights asserted in connection with any items mentioned in this

standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and

the risk of infringement of such rights are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction of

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI M58-0704 © SEMI 2004 1

SEMI M58-0704

TEST METHOD FOR EVALUATING DMA BASED PARTICLE

DEPOSITION SYSTEMS AND PROCESSES

This test method was technically approved by the Global Silicon Wafer Committee and is the direct

responsibility of the North American Silicon Wafer Committee. Current edition approved by the North

American Regional Standards Committee on April 22, 2004. Initially available at www.semi.org May 2004;

to be published July 2004.

1 Purpose

1.1 SEMI M52 requires the use of certified reference

materials (CRMs) for calibration of scanning surface

inspection systems (SSISs). The calibration method is

defined in SEMI M53. This test method provides the

procedure to determine whether a specific particle

deposition system, using a differential mobility

analyzer (DMA), can produce the required CRMs.

1.2 Both organizations producing depositions internally

for in-house use and companies manufacturing

depositions for sale can apply this test method to ensure

that their particle deposition systems provide

depositions that meet the requirements of SEMI M52.

2 Scope

2.1 This test method covers determination of the

deposition peak diameter and the associated expanded

relative combined peak diameter uncertainty produced

by a particle deposition system and its associated

deposition procedures for comparison to the 3%

requirement of SEMI M52.

2.2 This test method also covers determination of the

ability of the deposition system to produce depositions

with diameter distributions that are less than 5% full

width at half maximum (FWHM) as required by SEMI

M52 even when using a particle source with a much

wider distribution.

2.3 These tests require that the deposition system

employ a DMA (or an equivalent programmable

filtering system) to accomplish both peak diameter

determination and narrowing of particle source

distributions (see Related Information 1).

2.4 This test method covers determination of

repeatability over a period of one week. Tests can be

repeated periodically to determine long term stability.

Long term stability of most DMA-based particle

deposition systems is believed to be on the order of a

year or more, but it is recommended that the tests be

repeated on an annual basis or whenever the instrument

appears to be out of control.

2.5 This test method requires the use of three different

kinds of particle distributions with specified

characteristics and wafers that have surface

characteristics adequate to allow detection of the

smallest particles utilized with a capture rate of greater

than 95%.

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory or other limitations prior

to use.

3 Limitations

3.1 This test method is limited to use of depositions of

PSL spheres, even though the deposition system under

test may be capable of depositing particles of other

materials.

3.2 When used to make a deposition from a suspension

of PSL spheres that does not have an observable

certified peak diameter (or if the deposition is made at a

size away from the peak of the distribution in the

suspension), the uncertainty with which the deposition

system evaluates a peak deposition diameter includes

bias information determined from measurements on a

known standard or standards with extremely narrow

distributions. At the time when this test method was

developed, only one such standard existed. Therefore if

the bias contribution to uncertainty is a function of the

peak diameter in the suspension, the determination may

be in error at peak diameters away from that of the

known standard.

3.3 There is the possibility that the deposited particle

diameter may differ slightly from the certified value for

the bottle containing the suspension because the

surfactant in the suspension and contaminants in the

water may cause an increase in particle size. This

limitation can be avoided by using DMAs with the

same spray system, the same purity of dilution water,

and the same suspension concentration both to size the

particles in the bottle and make the deposition. This

possibility may be minimized by using PSL suspension

fluids with low non-volatile content to reduce the

possibility of non-volatile materials drying onto the

particles in the suspension.