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SEMI M38-1104 © SEMI 1999, 2004 8 Item 200 mm Wafers for 180 nm 300 mm Wafers for 130 nm 2.3 Resistivity Striations Unspecified 2.4 Minority Carrier Recombination Lifetime Unspecified 3.0 Chemical Characteristics 3.1.1 O…

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SEMI M38-1104 © SEMI 1999, 2004 7
Item Mechanical Furnace Particle Lithography
Iron Unspecified Customer
specified
Unspecified
Nickel Unspecified Customer
specified
Unspecified
Copper Unspecified Customer
specified
Unspecified
Zinc Unspecified Customer
specified
Unspecified
7.2 Surface Organics Unspecified
8.0
Front Surface Visual Characteristics
8.1 Scratches
Number of Unspecified 2
Cumulative length Unspecified 20 mm
8.2 Pits Unspecified Customer specified
8.3 Haze Unspecified Customer specified
8.4 Localized Light Scatters Unspecified
0.19/cm
2
@ customer specified size
8.5 Contamination/area Unspecified None
8.6 Edge Chips Unspecified None
8.7 Edge Cracks Unspecified None
8.8 Cracks, Crow's feet Unspecified None
8.8 Cracks, Crow's feet
8.9 Craters Unspecified None
8.10 Dimples Unspecified None
8.11 Grooves Unspecified None
8.12 Mounds Unspecified None
8.13 Orange Peel Unspecified None
8.14 Saw Marks Unspecified None
9.0
Back Surface Characteristics
9.1 Edge Chips Unspecified None
9.6 Roughness Unspecified Customer specified
9.7 Brightness (gloss) Unspecified
9.8 Localized Light Scatterers Unspecified Customer specified
9.9 Scratches
Number of Unspecified Customer specified
Cumulative length Unspecified Customer specified
Table 3 Guide for Specification of Polished Reclaim Wafers for 180 nm and 130 nm Technology Generations
Item 200 mm Wafers for 180 nm 300 mm Wafers for 130 nm
1.0
General Characteristics
1.1 Growth Method CZ or MCZ
1.2 Crystal Orientation {100}
1.3 Conductivity Type p
1.4 Dopant Boron
1.5 Nominal Edge Exclusion 3 mm (See
#1
)
2.0
Electrical Characteristics
2.1 Resistivity
0.5–50.0 ·cm
2.2 Radial Resistivity Variation Unspecified
SEMI M38-1104 © SEMI 1999, 2004 8
Item 200 mm Wafers for 180 nm 300 mm Wafers for 130 nm
2.3 Resistivity Striations Unspecified
2.4 Minority Carrier Recombination Lifetime Unspecified
3.0
Chemical Characteristics
3.1.1 Oxygen Concentration Unspecified
3.2 Radial Oxygen Variation Unspecified
3.3 Carbon Concentration Unspecified
4.0
Structural Characteristics
4.2 Slip None
4.3 Lineage None
4.4 Twins None
4.5 Swirl Unspecified
4.6 Shallow pits Unspecified
4.7 Oxidation-Induced Stacking Faults (OISF) Unspecified
4.8 Oxide Precipitates Unspecified
5.0
Wafer Preparation Characteristics
5.1 Wafer ID Marking Customer specified
5.2 Front Surface Thin Films None
5.3 Denuded Zone None
5.4 Extrinsic Gettering None
5.5 Backseal None
6.0
Mechanical Characteristics
6.1 Diameter
200 0.2 mm 300 0.2 mm
6.2 Primary Fiducial Location See SEMI M1.9 See SEMI M1.15
6.3 Primary Fiducial Dimension See SEMI M1.9 See SEMI M1.15
6.7 Thickness >650 µm (See
#2
)
6.8 Thickness Variation (TTV) 10 µm max. 25 µm max.
6.9 Wafer Surface Orientation
{100} 1°
6.11 Warp Customer specified
6.12 Sori Unspecified
6.14 Flatness/Site Unspecified (See
#3
)
7.0
Front Surface Chemistry
7.1 Surface Metal Contamination
Sodium <1 × 10
11
/cm
2
Aluminum <1 × 10
11
/cm
2
1.8 × 10
11
/cm
2
Chromium <1 × 10
11
/cm
2
Iron <1 × 10
11
/cm
2
Nickel <1 × 10
11
/cm
2
Copper <1 × 10
11
/cm
2
Zinc <1 × 10
11
/cm
2
Calcium <1 × 10
11
/cm
2
8.0
Front Surface Criteria
8.1A Scratches (macro) – total length None
8.1B Scratches (micro) – total length <0.10 × Diameter <0.50 × Diameter
8.2 Pits None
8.3 Haze None
8.4 Localized Light Scatterers
<0.20/cm
2
@ 0.20 µm
(See
#4
)
8.5 Contamination/Area None
8.6 Edge Chips None
SEMI M38-1104 © SEMI 1999, 2004 9
Item 200 mm Wafers for 180 nm 300 mm Wafers for 130 nm
8.7 Edge Cracks None
8.8 Crack, crows feet None
8.9 Craters None
8.10 Dimples None
8.11 Grooves None
8.12 Mounds None
8.13 Orange Peel None
8.14 Saw Marks None
9.0
Back Surface Criteria
9.1 Edge Chips None
9.6 Roughness Unspecified
9.7 Brightness (Gloss) Unspecified
TBD Localized Light Scatterers Unspecified
TBD Scratches (macro)-total length
50 mm
<150 mm
TBD Scratches (micro)-total length Unspecified
10.0
Other Characteristics
TBD Edge Condition Polished
TBD Packaging See Section 9 See SEMI M31 and SEMI M45.
#1
For edge exclusion, laser-marked areas are to be given special consideration.
#2
Minimum thickness may be limited by equipment constraints.
#3
To be negotiated between customer and supplier.
#4
The number of Localized Light Scatterers (LLS) per wafer is to be determined by customer/supplier agreement; the LLS size in PSL
equivalents is specified as 0.16 µm with a goal of decreasing to 0.12 µm. A recommended value is 200 @ 0.16 µm (interpreted as particles +
COP’s) or 50 @ 0.16 µm (for particles only – which may be distinguished from COP’s by metrology with customer/supplier agreement on the
tool and methodology.