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SEMI M1-0305 © SEMI 1978, 2005 12 ITEM SPECIFICATION MEASUREMENT METHOD 2-4.6 Shallow Pits Not greater than [ ]/cm 2 [ ]SEMI MF1727; [ ]SEMI MF1049; [ ]Other: (specify)_______ 2-4.7 Oxidation Induced Stacking Faults (OSF…

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SEMI M1-0305 © SEMI 1978, 2005 11
ITEM SPECIFICATION MEASUREMENT METHOD
2-2. ELECTRICAL CHARACTERISTICS (Note that indicates a required item for which a value or choice must be indicated in order to minimally specify a silicon wafer.)
2-2.1
Resistivity
Measured at
Nominal [ ] ± Tolerance [ ] ·cm
[ ]Center Point; [ ]Other: (specify)____________
[ ]SEMI MF84; [ ] SEMI MF673; [ ]DIN 50431
[ ]DIN50445; [ ]Other: (specify)____________
2-2.2
Radial Resistivity Variation
(RRG)
Not greater than [ ]%
SEMI MF81 Figure 1 [ ]A, [ ]B, [ ]C, [ ]D; [ ]DIN 50435;
[ ]Other: (specify) ______________
2-2.3 Resistivity Striations Not greater than [ ]% [ ]SEMI MF525; [ ]Other: (specify)__________
2-2.4 Minority Carrier Lifetime Greater than [ ] s
SEMI MF28 [ ]A, [ ]B; SEMI MF391 [ ]A, [ ]B;[ ]SEMI
MF1388; [ ]SEMI MF1535; [ ]JEITA EM-3502;
[ ]JIS H 0604; [ ]DIN 50440/1; [ ]Other: (specify)___________
2-3. CHEMICAL CHARACTERISTICS
2-3.1 Oxygen Concentration
(Values using the following
Calibration Factor, see
SEMI M44)
Nominal [ ] ± Tolerance [ ]; [ ]× 10
17
cm
3
; [ ]ppma
[ ]IOC-88; [ ] Old ASTM; [ ]New ASTM or Old DIN;
[ ] Original JEITA; [ ]Other: (specify)__________
IR (Interstitial): [ ] SEMI MF1188; [ ] SEMI MF1619;
[ ] JEIDA EM-3504; [ ] DIN 50438-1; [ ]Other:
(specify)_______
SIMS (Total): [ ] SEMI MF1366; [ ]GFA (Total)
2-3.2 Radial Oxygen Variation Not greater than [ ]% SEMI MF951 Plan [ ]A1; [ ]A2; [ ]A3; [ ]B; [ ]B1; [ ]C; [ ]D;
[ ]Other: (specify)______
2-3.3 Carbon Concentration
(Background, cf 2-1.7)
Not greater than [ ] [ ]ppma; [ ] × 10
16
cm
3
[ ] SEMI MF1391; JEITA EM-3503; [ ]DIN 50438/2;
[ ]Other: (specify)_______
2-3.4 Boron Concentration in
Heavily Doped n-type Silicon
Not greater than [ ] ppba
[ ]SEMI MF1528; [ ]Other: (specify)__________
2-4. STRUCTURAL CHARACTERISTICS
2-4.1 Dislocation Etch Pit Density [ ]Not greater than [ ]/cm
2
[ ]SEMI MF1809; [ ]JIS H 0609; [ ]DIN 50434;
[ ]DIN 50443/1; [ ]Other: (specify)_________
2-4.2 Slip [ ]None [ ]Other: (specify)________ [ ]SEMI MF1809; [ ]JIS H 0609; [ ]DIN 50434;
[ ]DIN 50443/1; [ ]Other: (specify)_________
2-4.3 Lineage [ ]None [ ]Other: (specify)________ [ ]SEMI MF1809; [ ]JIS H 0609; [ ]DIN 50434;
[ ]DIN 50443/1; [ ]Other: (specify)_________
2-4.4 Twin Boundary [ ]None [ ]Other: (specify)_______ [ ]SEMI MF1809; [ ]JIS H 0609; [ ]DIN 50434;
[ ]DIN 50443/1; [ ]Other: (specify)_________
2-4.5 Swirl [ ]Not greater than [ ]% of wafer area [ ]SEMI MF1809; [ ]JIS H 0609; [ ]DIN 50434;
[ ]DIN 50443/1; [ ]Other: (specify)_________
SEMI M1-0305 © SEMI 1978, 2005 12
ITEM SPECIFICATION MEASUREMENT METHOD
2-4.6 Shallow Pits Not greater than [ ]/cm
2
[ ]SEMI MF1727; [ ]SEMI MF1049; [ ]Other:
(specify)_______
2-4.7 Oxidation Induced Stacking
Faults (OSF)
Not greater than [ ]/cm
2
Test Cycle: [ ]SEMI MF1727; [ ]JIS H 0609;
[ ]Other: (specify)________
Observation Method: [ ]SEMI MF1726; [ ]JIS H 0609;
[ ]DIN 50443/1; [ ]Other: (specify)____________
2-4.8 Oxide Precipitates, BMD
Range: [ ] to [ ] Unit: [ ] cm
–2
; [ ] cm
–3
Test Cycle: SEMI MF1239 [ ]A, [ ]B;
p [ ]Other: (specify)_______
2-4.9 Interstitial Oxygen Reduction
([O
i
])
Range: [ ] to [ ] [ ]ppma; [ ]× 10
17
cm
3
Test Cycle: SEMI MF1239 [ ]A, [ ]B;
[ ]Other: (specify)____________
2-4.10 Bulk defects by X-ray
topography
[ ]Density:______________ cm
3
[ ]DIN 50443/1; [ ]Other: (specify)____________
2-5. WAFER PREPARATION CHARACTERISTICS
2-5.1 Wafer ID Marking [ ]None; [ ]SEMI M12; [ ]SEMI M13; [ ]SEMI T1; [ ]SEMI T2;
[ ]SEMI T7; [ ]SEMI T7 + optional alphanumeric mark (see
Figure 3); [ ]Other: (specify) ________
2-5.2 Front Surface Thin Film(s) [ ]None [ ]Description:
2-5.3 Denuded Zone [ ]None [ ]Description:
2-5.4 Extrinsic Gettering [ ]None [ ]Description:
2-5.5 Backseal [ ]None [ ]Description:
2-5.6 Annealing [ ]None [ ]Description:
2-5.7 Edge Surface Condition [ ]Ground; [ ]Etched; [ ]Polished
#2
2-5.8 Back Surface Condition [ ]Supplier Option; [ ]Caustic Etched; [ ]Acid Etched;
[ ]Polished
#2
(see Item 2-9.8 for required gloss level)
2-6. DIMENSIONAL CHARACTERISTICS (Note that indicates a required item for which a value or choice must be indicated in order to minimally specify a silicon wafer.
THE ITEMS LISTED IN THIS SECTION MAY BE [ ]Specified According to Category 1.__ Polished Wafers (see Tables 4 through 9) OR SPECIFIED
INDIVIDUALLY. If the items are specified according to a standard Category, the items marked with the symbol need not be entered individually.
2-6.1 Diameter
[ ]Nominal [ ] ± Tolerance [ ] mm [ ]SEMI MF2074; [ ]DIN 50441/4; [ ]Other: (specify)________
2-6.2 Fiducial Dimensions Flat [ ]Length or [ ]Diameter:
[ ]Nominal [ ] ± Tolerance [ ] mm
[ ]Notch Dimensions (see Figure 5)
[ ]SEMI MF671 (Flat Length); [ ]DIN 50441/4 (Flat Diameter);
[ ]SEMI MF1152 (Notch Dimensions);
[ ]Other: (specify)________________
SEMI M1-0305 © SEMI 1978, 2005 13
ITEM SPECIFICATION MEASUREMENT METHOD
2-6.3 Primary Flat/Notch Orientation
[ ] (crystal axis) [_____] ____
[ ]SEMI MF847 (Flat); [ ] Other: (specify)___________
2-6.4 Secondary Flat Length
[ ]None; [ ]Other: _________mm
[ ]SEMI MF671; [ ]Other: (specify)___________
2-6.5 Secondary Flat Location
(see Figure 4)
[ ]None; [ ]Other: (
) _______
2-6.6 Edge Profile [ ] (specify)__________ SEMI MF928: Method A [ ], Method B [ ]; DIN 50441/2:
Procedure 1 [ ], Procedure 2 [ ]; [ ]Other: (specify)_________
2-6.7 Thickness
[ ]Nominal [ ] ± Tolerance [ ] µm [ ]SEMI MF533; [ ]SEMI MF1530; [ ]JIS H 0611;
[ ]DIN 50441/1; [ ]Other: (specify)________
2-6.8 Total Thickness Variation
(TTV)
[ ] [ ] µm, max. [ ]SEMI MF533; [ ]SEMI MF657; [ ]SEMI MF1530;
[ ]JIS H 0611; [ ]DIN 50441/1; [ ]Other: (specify)_________
2-6.9 Bow
[ ] [ ] µm, max [ ]SEMI MF534; [ ]JIS H 0611; [ ]Other: (specify)___________
2-6.10 Warp
[ ] [ ] µm, max [ ]SEMI MF657; [ ]SEMI MF1390; [ ]Other:
(specify)_________
2-6.11 Sori [ ] [ ] µm, max [ ] SEMI MF1451; [ ] JEITA EM-3401; [ ]Other:
(specify)__________
2-6.12 Flatness, Global Acronym:
#3
[ ] [ ] [ ] [ ] Value: [ ]µm [ ]SEMI MF1530; [ ]DIN 50441/3; [ ]JEITA EM-3401;
[ ]Other: (specify)__________
2-6.13 Flatness, Site Acronym:
#3
[ ] [ ] [ ] [ ] Value: Not greater than [ ]µm
Site Size ___ mm × ___ mm
[ ]% Usable Area________
[ ]Include partial sites; [ ]Do not include partial sites
Offset: x = [ ] mm, y = [ ] mm
[ ]SEMI MF1530; [ ]Other: (specify)_____________
2-6.14 Nanotopography
[ ]SEMI M43 (specify conditions):____________________
2-7. FRONT SURFACE CHEMISTRY
2-7.1 Surface Metal Contamination
2-7.1.1 Sodium
[ ]Not greater than [ 10 ]atoms/cm
2
[ ]ICP/MS; [ ]AAS; [ ]SEMI MF1617 (SIMS);
[ ]Other: (specify)_____________
2-7.1.2 Aluminum
[ ]Not greater than [ 10 ]atoms/cm
2
[ ]ICP/MS; [ ]AAS; [ ]SEMI MF1617 (SIMS);
[ ]Other: (specify)_____________