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SEMI M18-0704 © SEMI 1990, 2004 2 SEMI MF28 — Test M ethod for Minority-Carrier Lifetime in Bulk Germanium an d Silicon by Measurement of Photoconductive Decay SEMI MF42 — Standard Test Methods for Conductivity Type o f …
SEMI M18-0704 © SEMI 1990, 2004 1
SEMI M18-0704
FORMAT FOR SILICON WAFER SPECIFICATION FORM FOR ORDER
ENTRY
This format was technically approved by the Global Silicon Wafer Committee and is the direct responsibility
of the Japanese Silicon Wafer Committee. Current edition approved by the Japanese Regional Standards
Committee on April 30, 2004. Initially available at www.semi.org June 2004; to be published July 2004.
Originally published in 1990; last published March 2004.
1 Purpose
1.1 This format provides a standard form for specifying
several classifications of silicon wafers, as follows:
1.1.1 Polished Silicon Wafers.
1.1.2 Epitaxial Silicon Wafers.
1.1.3 Epitaxial Silicon Wafers with Buried Layer.
1.1.4 Annealed Silicon Wafer.
1.1.5 SOI Wafers for CMOS Applications.
1.2 This format also lists the Electronic Data
Interchange (EDI) codes used in SEMI T6 to identify
the type of data being reported in the EDI message.
2 Scope
2.1 The form is designed to be used in conjunction
with other SEMI specifications where details of the
dimensional, physical, electrical, and chemical
properties are defined or specified. However, the form
includes many items that are not currently included in
the SEMI specifications. Also, many items are not now
commonly specified, but may find increased
importance in the future. The intention is to provide for
flexibility and expansion of the technology.
2.2 This format provides for specifying and ordering
silicon wafers with varying levels of complexity. The
minimum level of completeness is shown in each case,
with additional options included to allow for
customization of the wafer to the specific processing
requirements of the user. If a particular item is not of
interest, no entry is required. The only required entries
are those marked as such for the purpose of minimal
specification (diameter, orientation, dopant, resistivity,
etc.).
2.3 Values for many items are listed either in the
polished silicon wafer standards in SEMI M1 or in the
defect limits tables in SEMI M1, SEMI M2, or SEMI
M11. If these standard specifications are sufficient for
defining the wafers, only a single entry is required in
each section of the form.
2.4 This format also lists the codes required by SEMI
T6 to identify the parameter being reported in the EDI
message. Where necessary, secondary characteristics
or identifier codes are listed within a generalized
characteristic.
2.5 For referee purposes, U.S. Customary units shall be
used for wafers of 2- and 3-inch diameters, and SI
(System International, commonly called metric) units
for 100 mm and larger diameter wafers.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Referenced Standards
3.1 SEMI Standards
SEMI M1 — Specifications for Polished
Monocrystalline Silicon Wafers
SEMI M2 — Specifications for Silicon Epitaxial
Wafers for Discrete Device Applications
SEMI M11 — Specifications for Silicon Epitaxial
Wafers for Integrated Circuit (IC) Applications
SEMI M12 — Specification for Serial Alphanumeric
Marking of the Front Surface of Wafers
SEMI M13 — Specifications for Alphanumeric
Marking of Silicon Wafers
SEMI M20 — Specification for Establishing a Wafer
Coordinate System
SEMI M33 — Test Method for the Determination of
Residual Surface Contamination on Silicon Wafers by
Means of Total Reflection X-Ray Fluorescence
Spectroscopy (TXRF)
SEMI M35 — Guide for Developing Specifications for
Silicon Wafer Surface Features Detected by Automated
Inspection
SEMI M47 — Specification for Silicon-on-insulator
(SOI) Wafers for CMOS LSI Applications
SEMI MF26 — Standard Test Methods for
Determining the Orientation of a Semiconductive
Single Crystal
SEMI M18-0704 © SEMI 1990, 2004 2
SEMI MF28 — Test Method for Minority-Carrier
Lifetime in Bulk Germanium and Silicon by
Measurement of Photoconductive Decay
SEMI MF42 — Standard Test Methods for
Conductivity Type of Extrinsic Semiconducting
Materials
SEMI MF81 — Method for Measuring Radial
Resistivity Variation on Silicon Wafers
SEMI MF84 — Standard Test Method for Measuring
Resistivity of Silicon Wafers with an In-Line Four-
Probe Array
SEMI MF95 — Test Method for Thickness of Lightly
Doped Silcon Epitaxial Layers on Heavily Doped
Silicon Substrates Using an Infrared Dispersive
Spectrophotometer
SEMI MF110 — Test Metod for Thickness of Epitaxial
or Diffused Layers in Silicon by the Angle Lapping and
Staining Technique
SEMI MF154 — Standard Practices and Nomenclature
for Identification of Structures and Contaminants Seen
on Specular Silicon Surfaces
SEMI MF374 — Test Method for Sheet Resistance of
Silicon Epitaxial, Diffused, Polysilicon, and Ion-
implanted Layers Using and In-Line Four-Point Probe
SEMI MF391 — Standard Test Methods for Minority-
Carrier Diffusion Length in Extrinsic Semiconductors
by Measurement of Steady-State Surface Photovoltage
SEMI MF398 — Test Method for Majority Carrier
Concentration in Semiconductors by Measurement of
Wave Number or Wavelength of the Plasma Resonance
Minimum.
SEMI MF523 — Standard Practice for Unaided Visual
Inspection of Polished Silicon Wafer Surface
SEMI MF525 — Test Method Measuring Resistivity of
Silicon Wafers Using a Spreading Resistance Probe
SEMI MF533 — Standard Test Method for Thickness
and Thickness of Variation of Silicon Wafers
SEMI MF534 — Standard Test Method for Bow of
Silicon Wafers
SEMI MF657 — Standard Test Method for Measuring
Warp and Total Thickness Variation on Silicon Wafers
by Noncontact Scanning
SEMI MF671 — Standard Test Method for Measuring
Flat Length on Wafers of Silicon and Other Electronic
Material
SEMI MF672 — Test Method for Measuring
Resistivity Profiles Perpendicular to the Surface of a
Silicon Wafer Using a Spreading Resistance Probe
SEMI MF673 — Standard Test Methods for Measuring
Resistivity of Semiconductor Slices or Sheet Resistance
of Semiconductor Films with a Noncontact Eddy-
Current Gage
SEMI MF723 — Practice for Conversion Between
Resisitivity and Dopant Density for Boron-Doped,
Phosphorus-Doped, and Arsenic-Doped Silicon.
SEMI MF847 — Standard Test Methods for Measuring
Crystallographic Orientation of Flats on Single Crystal
Silicon Wafers by X-Ray Techniques
SEMI MF928 — Standard Test Methods for Edge
Contour of Circular Semiconductor Wafers and Rigid
Disk Substrates
SEMI MF951 — Test Method for Radial Interstitial
Oxygen Variation in Silicon Wafers
SEMI MF978 — Standard Test Method for
Characterizing Semiconductor Deep Levels by
Transient Capacitance Techniques
SEMI MF1049 — Standard Practice for Shallow Pit
Detection on Silicon Wafers
SEMI MF1152 — Standard Test Method for
Dimensions of Notches on Silicon Wafers
SEMI MF1188 — Standard Test Method for Interstitial
Atomic Oxygen Content of Silicon by Infrared
Absorption
SEMI MF1239 — Standard Test Methods for Oxygen
Precipitation Characterization of Silicon Wafers by
Measurement of Interstitial Oxygen Reduction
SEMI MF1241 — Standard Terminology of Silicon
Technology
SEMI MF1366 — Test Method for Measuring Oxygen
Concentration in Heavily Doped Silicon Substrates by
Secondary Ion Mass Spectroscopy
SEMI MF1388 — Test Method for Generation Lifetime
and Generation Velocity of Silicon Material by
Capacitance-Time Measurements of Metal-Oxide-
Silicon (MOS) Capacitors
SEMI MF1390 — Standard Test Method for Measuring
Warp on Silicon Wafers by Automated Noncontact
Scanning
SEMI MF1391 — Standard Test Method for
Substitutional Atomic Carbon Content of Silicon by
Infrared Absorption
SEMI MF1392 — Test Method for Determining Net
Carrier Density Profiles in Silicon Wafers by
Capacitance-Voltage Measurements with a Mercury
Probe
SEMI M18-0704 © SEMI 1990, 2004 3
SEMI MF1393 — Test Metod for Determining Net
Carrier Density Profile in Silicon Wafers by
Capacitance-Voltage Measurements with a Mercury
Probe
SEMI MF1451 — Standard Test Method for Measuring
Sori on Silicon Wafers by Automated Noncontact
Scanning
SEMI MF1526 — Standard Test Method for Measuring
Surface Metal Contamination on Silicon Wafers by
Total Reflection X-ray Fluorescence Spectroscopy
SEMI MF1530 — Standard Test Method for Measuring
Flatness, Thickness, and Thickness Variation on Silicon
Wafers by Automated Noncontact Scanning
SEMI MF1528 — Test Method for Measuring Boron
Contamination in Heavily Doped N-Type Silicon
Substrates by Secondary Ion Mass Spectrometry
SEMI MF1535 — Standard Test Method for Carrier
Recombination Lifetime in Silicon Wafers by
Noncontact Measurement of Photoconductivity Decay
by Microwave Reflectance
SEMI MF1617 — Standard Test Method for Measuring
Surface Sodium, Aluminum, and Potassium on Silicon
and EPI Substrates by Secondary Ion Mass
Spectroscopy
SEMI MF1619 — Standard Test Method for
Measurement of Interstitial Oxygen Content of Silicon
Wafers by Infrared Absorption Spectroscopy with p-
Polarized Radiation Incident at the Brewster Angle
SEMI MF1620 — Standard Practice for Calibrating a
Scanning Surface Inspection System Using
Monodisperse Polystyrene Latex Spheres Deposited on
Polished or Epitaxial Surfaces
SEMI MF1621 — Standard Practice for Determining
Positional Accuracy Capabilities of a Scanning Surface
Inspection System
SEMI MF1725 — Standard Guide for Analysis of
Crystallographic Perfection of Silicon Ingots
SEMI MF1726 — Standard Guide for Analysis of
Crystallographic Perfection of Silicon Wafers
SEMI MF1727 — Practice for Detection of Oxidation
Induced Defects in Polished Silicon Wafers
SEMI MF1809 — Guide for Selection and Use for
Etching Solutions to Delineate Structural Defects in
Silicon
SEMI MF1810 — Test Method for Counting
Preferentailly Etched or Decorated Structural Defects
on Silicon Wafers
SEMI MF1982 — Test Method for Analyzing Organic
Contamination on Silicon Wafers Surfaces by Thermal
Desporption Gas Chromatography
SEMI T1 — Specification for Back Surface Bar Code
Marking of Silicon Wafers
SEMI T2 — Specification for Marking of Wafers with
a Two-Dimensional Matrix Code Symbol
SEMI T6 — Procedure and Format for Reporting of
Test Results by Electronic Data Interchange (EDI)
SEMI T7 — Specification for Back Surface Marking of
Double-Side Polished Wafers with a Two-Dimensional
Matrix Code Symbol
3.2 ANSI Standard
1
ANSI/ASQC Z1.4 — Sampling Procedures and Tables
for Inspection by Attributes
3.3 ASTM Standards
2
D 523 — Standard Test Method for Specular Gloss
E 122 — Standard Practice for Choice of Sample Size
to Estimate the Average Quality of a Lot or Process
F 416 — Standard Test Method for Detection of
Oxidation Induced Defects in Polished Silicon Wafers
F 419 — Test Method for Determining Carrier Density
in Silicon Epitaxial Layers by Capacitance-Voltage
Measurement on Fabricated Junction of Schottky
Diodes
F 613 — Standard Test Method for Measuring
Diameter of Semiconductor Wafers
3.4 DIN Standards
3
NOTE 1: DIN Standards are available in both German and
English editions. ASTM equivalents are given in square
brackets following the title.
50431 — Measurement of the Electrical Resistivity of
Silicon or Germanium Single Crystals by Means of the
Four-Point-Probe Direct Current Method with Colinear
Four-Probe Array
50432 — Determination of the Conductivity Type of
Silicon or Germanium by Means of Rectification Test
or Hot-Probe
1 American National Standards Institute, New York Office: 11 West
42nd Street, New York, NY 10036, USA. Telephone: 212.642.4900;
Fax: 212.398.0023 Website: www.ansi.org
2 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohocken, Pennsylvania 19428-2959, USA.
Telephone: 610.832.9585, Fax: 610.832.9555 Website:
www.astm.org
3 Available from Deutches Institut für Normung e.V., Beuth Verlag
GmbH, Burggrafenstrasse 4-10, D-10787 Berlin, Germany, website:
www.din.de