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SEMI E113-1104 SPECIFICATION FOR SEMICONDUCT OR PROCESSING EQUIPMENT RF POWER DELIVERY SYSTEMS This specification was technically approved b y the Gl obal Metrics Committee and is the direct responsibility of the North A…

SEMI E112-0305 © SEMI 2001, 2005 16

RELATED INFORMATION 1

NOTICE: This related information is not an official part of SEMI E112, and it is not intended to modify or

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SEMI E113-1104

SPECIFICATION FOR SEMICONDUCTOR PROCESSING EQUIPMENT

RF POWER DELIVERY SYSTEMS

This specification was technically approved by the Global Metrics Committee and is the direct responsibility

of the North American Metrics Committee. Current edition approved by the North American Regional

Standards Committee on July 11, 2004. Initially available at www.semi.org September 2004; to be published

November 2004. Originally published November 2001; previously published November 2003.

1 Purpose

1.1 Process plasmas are used throughout the

semiconductor industry for the etching and deposition

of thin films. The majority of the process chambers use

RF power to produce and sustain the plasmas. Because

the reliability and repeatability of the plasma directly

impacts wafer-processing results, RF power delivery

systems are a key element of semiconductor

manufacturing technology. The accurate and

reproducible performance of the entire RF power

generation system, including the RF influenced

parameters of the plasma, must be within commonly

accepted tolerances.

1.2 Design criteria for RF reliability and repeatability

demand standardized testing and evaluation of the

performance of the RF power delivery systems and

control instrumentation on a chamber. Not only must

the subsystems (i.e., the generator, cable assemblies,

matching network, chuck/coil) be characterized, but the

performance of the integrated system must also be

characterized over the intended operating range.

1.3 It is the intent of this standard to provide RF power

delivery specifications for semiconductor processing

equipment that leads to improved system and

subsystem performance. It outlines performance

criteria as well as required documentation that must be

supplied with the system or subsystem components.

The goal of the document is to provide the

specifications needed to produce a well-characterized

RF power delivery system, where stability,

repeatability, and important electrical parameters such

as delivered power, current/voltage, and the impedance

of the system can be determined within the operating

space.

2 Scope

2.1 This document specifies the minimum performance

criteria for RF equipment used in the semiconductor

industry. It does not address specific test methods or

procedures for performance verification.

2.2 The primary focus for this specification is

semiconductor processing equipment including, but not

limited to, the following tool types:

 Dry etch equipment, and

 Film deposition equipment (CVD and PVD).

2.3 This specification applies to semiconductor

processing equipment RF power delivery systems

whose power is directly used to produce and sustain the

plasma.

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory or other limitations prior

to use.

3 Limitations

3.1 This standard is meant to address RF systems that

primarily operate in the frequency range of 0.2–100

MHz. It does not address higher frequency RF systems

or microwave systems.

3.2 This standard is not meant to address pulsed-

power RF systems.

3.3 This standard is intended to be a performance

specification and is not intended to address design

issues related to safety, which are covered elsewhere in

the SEMI Standards.

3.4 This standard does not address any safety or

performance issues related to RF emissions or electrical

codes (e.g., Underwriter’s Laboratory, Inc. (UL), the

National Electrical Code (NEC), Federal

Communications Commission (FCC)). It is the

responsibility of the users of this standard to conform to

the appropriate local codes and regulations as applied to

this type of equipment, some of which are covered by

referenced documents.

SEMI E113-1104 © SEMI 2001, 2004 1

4 Referenced Standards

4.1 SEMI Standards

SEMI E10 — Specification for Definition and

Measurement of Equipment Reliability, Availability,

and Maintainability (RAM)

SEMI E78 — Electrostatic Compatibility - Guide to

Assess and Control Electrostatic Discharge (ESD) and

Electrostatic Attraction (ESA) for Equipment

SEMI E114 — Test Method for RF Cable Assemblies

Used in Semiconductor Processing Equipment RF

Power Delivery Systems

SEMI E115 — Test Method for Determining the Load

Impedance and Efficiency of Matching Networks Used

in Semiconductor Processing Equipment RF Power

Delivery Systems

SEMI E135 — Test Method for RF Generators to

Determine Transient Response for RF Power Delivery

Systems used in Semiconductor Processing Equipment

4.2 IEEE Standard

IEEE-STD-383 — IEEE Standard for Type Test of

Class 1E Electrical Cables, Field Splices, and

Connections for Nuclear Power Generating Stations

4.3 MIL-Specification

MIL-C-17G — General Specification for Cables, Radio

Frequency, Flexible and Semirigid

MIL-PRF-39012D — General Specification for

Connectors, Coaxial, Radio Frequency

NOTICE: Unless otherwise indicated, all documents

cited shall be the latest published versions.

5 Terminology

5.1 Abbreviations and Acronyms

5.1.1 CVD — Chemical Vapor Deposition

5.1.2 PVD — Physical Vapor Deposition

5.1.3 VSWR — Voltage Standing Wave Ratio

5.2 Definitions

5.2.1 cable assembly — the section of cable

(transmission line), including the connectors, used to

connect various parts of the RF power delivery system.

1 Institute of Electrical and Electronics Engineers, IEEE Operations

Center, 445 Hoes Lane, P.O. Box 1331, Piscataway, New Jersey

08855-1331, USA. Telephone: 732.981.0060; Fax: 732.981.1721

website: www.ieee.org

2 Available from Naval Publication and Forms Center, 5801 Tabor

Avenue, Philadelphia PA 19120 U.S.A website:

www.dodssp.daps.mil/products.htm.

5.2.2 electrical length — the length of the cable

assembly at the operating frequency expressed in terms

of degrees, where one wavelength at the nominal

operating frequency is equal to 360°.

5.2.3 harmonic frequency — the harmonic frequencies

are defined as integer multiples of the fundamental

frequency. For example, the second harmonic of 13.56

MHz is 27.12 MHz.

5.2.4 load Q — the quality factor, Q, of the load is

defined here as the magnitude of the reactive part of the

load divided by the real part of the load. For example, a

load impedance of 2 – j20 ohms would have a load Q of

10.

5.2.5 matched load — a matched load impedance is

defined as typically having a magnitude of 50  3.3

ohms at a phase angle of up to  3.8°. In other words,

the load is considered matched if the reflection

coefficient is no greater than 0.032 at any phase angle.

5.2.6 matching network — the device used to

transform the impedance of the load (chamber/chuck)

to match the impedance of the generator/cable

assembly, which is typically 50 ohms.

5.2.7 matching network load impedance — the

impedance of the load to which the matching network is

matched.

5.2.8 MTBF

— mean (productive) time between

failures; the average time the equipment performed its

intended function between failures; productive time

divided by the number of failures during that time.

Only productive time is included in this calculation.

5.2.9 power efficiency — the power efficiency of a

matching network is defined as the power exiting the

network (output power) divided by the power entering

the network (input power).

5.2.10 RF applicator/interface — the part of the

chamber where the RF system is terminated. This

interface can either be a chuck (driven electrode) or the

coil/antenna part of a plasma source.

5.2.11 RF system — the RF system is defined as the

combination of the generator, matching network,

chamber interface, and the associated connecting cable

assemblies that are specific to a particular tool/chamber.

5.2.12 tap point — for some systems, partial tuning of

the matching network is achieved by switching in a

combination of fixed tuning elements, such as different

values of capacitors. The tap point is defined as the

position of the switch(es) that connect or disconnect

tuning elements in the matching network circuit.

5.2.13 tuning element position — the position of the

tuning element is defined as the output voltage or