semi合集-English.pdf - 第5029页

SEMI M18-0704 © SEMI 1990, 2004 15 13.14 Localized Light Scatterers (LLS) 4 [ ]SEMI M11 Table 1 [ ]Other: Size: [ ] µ m Count: ≤ [ ] Size: [ ] µ m Count: ≤ [ ] Size: [ ] µ m Count: ≤ [ ] Size: [ ] µ m Count: ≤ [ ] Size: …

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SEMI M18-0704 © SEMI 1990, 2004 14
13.3 Large Point Defects
4
[ ]SEMI M2 Table 1; [ ]SEMI M11 Table [ ];
[ ]Other:
100138
Method [ ] SEMI MF523 [ ] ASTM F815 [ ] DIN
50446
[ ] Other:
13.4 Total Points Defects
4
[ ]SEMI M2 Table 1; [ ]SEMI M11 Table [ ];
[ ]Other:
100139
Method [ ] SEMI MF523 [ ] ASTM F815 [ ] DIN
50446
[ ] Other:
13.5 Scratches
4
[ ]SEMI M2 Table 1; [ ]SEMI M11 Table [ ];
[ ]Other:
100140
Method [ ] SEMI MF523 [ ]Other
13.6 Dimples
4
[ ]SEMI M2 Table 1; [ ]SEMI M11 Table [ ];
[ ]Other:
100141
Method [ ] SEMI MF523 [ ]Other
13.7 Orange Peel
4
[ ]SEMI M2 Table 1; [ ]SEMI M11 Table [ ];
[ ]Other:
100142
Method [ ] SEMI MF523 [ ]Other
13.8 Cracks/Fractures
4
[ ]SEMI M2 Table 1; [ ]SEMI M11 Table [ ];
[ ]Other:
100143
Method [ ] SEMI MF523 [ ]Other
13.9 Crow's Feet
4
[ ]SEMI M2 Table 1; [ ]SEMI M11 Table [ ];
[ ]Other:
100144
Method [ ] SEMI MF523 [ ]Other
13.10 Edge Chips
4
[ ]SEMI M2 Table 1; [ ]SEMI M11 Table [ ];
[ ]Other:
100145
Method [ ] SEMI MF523 [ ]Other
13.11 Edge Crown
4
[ ]SEMI M2 Table 1; [ ]SEMI M11 Table [ ];
[ ]Other:
100146
Method [ ] DIN 50446 [ ]Other
13.12 Haze
4
[ ]SEMI M2 Table 1; [ ]SEMI M11 Table [ ];
[ ]Other:
100147
Method [ ] SEMI MF523 [ ]Other
13.13 Foreign Matter
4
[ ]SEMI M2 Table 1; [ ]SEMI M11 Table [ ];
[ ]Other:
100148
Method [ ] SEMI MF523 [ ]Other
SEMI M18-0704 © SEMI 1990, 2004 15
13.14 Localized Light
Scatterers (LLS)
4
[ ]SEMI M11 Table 1
[ ]Other:
Size: [ ] µm Count: ≤ [ ]
Size: [ ] µm Count: ≤ [ ]
Size: [ ] µm Count: ≤ [ ]
Size: [ ] µm Count: ≤ [ ]
Size: [ ] µm Count: ≤ [ ]
100173
100174
100175
100176
100177
100178
100179
100180
100181
100182
100183
100184
100185
100186
100187
100188
100189
100190
100191
100192
100193
≥0.50 µ
≥0.30 µ
≥0.20 µ
≥0.19 µ
≥0.18 µ
≥0.17 µ
≥0.16 µ
≥0.15 µ
≥0.14 µ
≥0.13 µ
≥0.12 µ
≥0.11 µ
≥0.10 µ
≥0.09 µ
≥0.08 µ
≥0.07 µ
≥0.06 µ
≥0.05 µ
≥0.04 µ
≥0.03 µ
≥0.02 µ
Method [ ]SEMI MF523; [ ]SEMI MF1620; [ ]JIS H
614;
[ ]JEIDA 24; [ ]Other:______
13.15 Surface Edge
Exclusion
[ ]2 mm; [ ]3 mm; [ ]4 mm; [ ]5 mm ;
[ ]Other:____
100194
14. BACK SURFACE VISUAL INSPECTION CHARACTERISTICS
THE ITEMS LISTED IN THIS SECTION MAY BE
14.01 [ ] Specified According to SEMI M11 Table [ ] 100195
OR SPECIFIED INDIVIDUALLY
14.1 Contamination
4
[ ]SEMI M2 Table 1; [ ]SEMI M11 Table [ ];
[ ]Other:_____
100149
14.2 Scratches -- macro [ ]None; [ ]Cum Length =[ ] mm 100196
14.3 Scratches -- micro [ ]None; [ ]Cum Length =[ ] mm 100197
14.4 Localized Light
Scatterers
[ ]SEMI M11 Table [ ]; [ ]Other:_____
Size: [ ] µm Count: ≤ [ ]
Size: [ ] µm Count: ≤ [ ]
100198
100199
15. OTHER CHARACTERISTICS
Part 4 Epitaxial Wafer with Buried Layer
CUSTOMER:
P
ART
N
UMBER: REVISION
D
ATE:
TESTING LEVEL EDI Sub
WAFER TEST PIECE
Code Param
REQUIRED
ITEM SPECIFICATION
100% SAMP
LE
100% SAMP
LE
ID ID
16. PHOTOLITHOGRAPHY CHARACTERISTICS
16.1 Mask ID [ ] Number: [ ]; [ ]None 100150
SEMI M18-0704 © SEMI 1990, 2004 16
16.2 Alignment Precision X max [ ] µm, Y max [ ] µm, Θ max[ ];
Reference Point (Wafer Coordinate System):
x [ ] mm, y [ ] mm
100151
16.3 Pattern Line Width
Tolerance
Tolerance ± [ ] µm 100152
17. BURIED LAYER CHARACTERISTICS
17.1 Dopant [ ]B; [ ]Phos; [ ]Sb; [ ]As 100153
17.2 Diffusion Depth (x
j
) Nominal [ ] ± Tolerance [ ] µm 100154
17.3 Sheet Resistance Nominal [ ] ± Tolerance [ ] Ω/sq 100155
17.4 Pattern Step Height Nominal [ ] ± Tolerance [ ] nm 100156
17.5 Defect Density (Before
Epi)
Not greater than [ ]/cm
2
100157
18. BURIED LAYER PATTERN CHARACTERISTICS AFTER EPI
18.1 Pattern Shift Ratio Nominal [ ] ± Tolerance [ ] 100158
18.2 Pattern Distortion Ratio Max. [ ] 100159
19. OTHER CHARACTERISTICS
Part 5 Annealed Wafer
CUSTOMER:
P
ART NUMBER: REVISION
D
ATE:
TESTING LEVEL EDI Sub
WAFER TEST PIECE
Code Param
REQUIRED
ITEM SPECIFICATION
100% SAMP
LE
100% SAMP
LE
ID ID
20. GENERAL ANNEALED WAFER CHARACTERISTICS
♦
20.1 Annealing Atmosphere [ ]Hydrogen [ ]Argon [ ]Other:
____________
100200
♦
20.2 Co-dopant in Crystal [ ]N [ ]C [ ]Other: 100201
21. MECHANICAL CHARACTERISTICS
21.1 Bow Not greater than [ ] µm 100202
Method [ ]SEMI MF534; [ ]JIS H 611;
[ ]Other:_____
21.2 Warp Not greater than [ ] µm
Method [ ] SEMI MF657; [ ] SEMI MF1390;
[ ]Other:__________
100203
100204
SEMI
MF657
SEMI
MF1390
21.3 Sori Not greater than [ ] µm 100205
21.4 Flatness/Global Acronym
2
: [ ][ ][ ][ ] Value _____µm 100206
Method [ ]SEMI MF1530 [ ]DIN 50441/3 [ ]Other