semi合集-English.pdf - 第5218页

SEMI M39-0999 © SE MI 1999 4 NOTICE: T hese s tandards do not purport to address safety issues, if any, ass o ciated with their use. It is the responsibility of t he user of these standards to establish appropriate safet…

100%1 / 7923
SEMI M39-0999 © SEMI 19993
11 Calculations
11.1 Resistivity
ρ = (π × t/2 ln2) × (R
1
+ R
2
) × f(R
1
/R
2
) [Ω⋅cm]
where:
t is the specimen thickness,
R
1
and R
2
are the equivalent resistances
for two opposite sides as follows:
R
1
= V
1
/I
1
R
2
= V
2
/I
2
f(R
1
/R
2
) is the correction factor for specimen
shape.
In the case of R
1
/R
2
< 10,
f(R
1
/R
2
) = 1 − 0.34657A − 0.09236A
2
where: A = [(R
1
/R
2
− 1)/(R
1
/R
2
+ 1)]
2
11.2 Hall Mobility
µ = (t/B) × R
3
/ρ [cm
2
/ V⋅s]
where:
B is the magnetic flux density,
R
3
= V
3
-V
4
/ I
where:
V
3
is the voltage when the current is I under
magnetic flux
V
4
is the voltage when the current is I without
magnetic flux.
11.3 Temperature Conversion
11.3.1 Resistivity
ρ
T
= ρ
T1
⋅exp[−Ea/k⋅(1/T
1
− 1/T)]
where:
Ea is the activation energy (= 0.75eV)
k is the Boltzman constant (= 8.61E − 5 eV/K)
ρ
T
is the resistivity at T(K)
11.3.2 Hall Mobility
µ
T
= µ
T2
(T/T
2
)
−3/2
where: µ
T
is the Hall mobility at T(K)
12 Report
12.1 The following information shall be included in
the report for referee and research measurement:
12.1.1 Identification of test specimen,
12.1.2 Test temperature,
12.1.3 Specimen shape used, orientation, and corre-
sponding dimensions,
12.1.4 Magnitude of magnetic-flux density, and
12.1.5 Calculated resistivity and Hall mobility.
V
1
V
2
I
2
1
2
3
4
I
1
Figure 1
Block Diagram of Resistivity Measurement
V
3
or V
4
I
1
2
3
4
Magnetic field
Figure 2
Block Diagram of Hall Mobility Measurement
SEMI M39-0999 © SEMI 1999 4
NOTICE: These standards do not purport to address
safety issues, if any, associated with their use. It is the
responsibility of the user of these standards to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
SEMI makes no warranties or representations as to the
suitability of the standards set forth herein for any
particular application. The determination of the
suitability of the standard is solely the responsibility of
the user. Users are cautioned to refer to manufacturer’s
instructions, product labels, product data sheets, and
other relevant literature respecting any materials
mentioned herein. These standards are subject to
change without notice.
The user’s attention is called to the possibility that
compliance with this standard may require use of
copyrighted material or of an invention covered by
patent rights. By publication of this standard, SEMI
takes no position respecting the validity of any patent
rights or copyrights asserted in connection with any
item mentioned in this standard. Users of this standard
are expressly advised that determination of any such
patent rights or copyrights, and the risk of infringement
of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI M40-0200 © SEMI 20001
SEMI M40-0200
GUIDE FOR MEASUREMENT OF SURFACE ROUGHNESS OF PLANAR
SURFACES ON SILICON WAFER
This guide was technically approved by the Global Silicon Wafer Committee and is the direct responsibility
of the North American Silicon Wafer Committee. Current edition approved by the North American Regional
Standards Committee on December 15, 1999. Initially available at www.semi.org February 2000; to be
published February 2000.
1 Purpose
1.1 This guide provides procedures for specifying the
measurements to be used in characterizing and
reporting roughness of the planar surfaces of silicon
wafers. It may also be applicable to other types of
planar wafer materials.
1.2 This guide provides nomenclature and procedures
for roughness determination that employ three key
methodologies:
1.2.1 Standardized scan site patterns ,
1.2.2 Roughness abbreviations, and
1.2.3 Reference test methodologies with respect to
identifying specific roughness measurements.
2 Scope
2.1 This guide incorporates the following
methodologies:
2.1.1 Standardized scan patterns for both local and
full-area surface characterization,
2.1.2 A set of roughness abbreviatio ns that describe
measurement conditions in a short-hand code, and
2.1.3 Reference test methodologies for three generic
types of roughness measuring instruments. These
general categories may include, but are not limited to:
• Profilometers — AFM and other scanning probe
microscopes; optical profilometers; high-resolution
mechanical stylus systems,
• Interferometers — interference microscopes, and
• Scatterometers — Total integrating scatterometers
(TIS), angle-resolved light scatterometers (ARLS),
scanning surface inspection systems (SSIS).
2.2 Procedures to obtain a represe ntative value of
roughness for a surface are specified.
2.3 Roughness nomenclature is int ended to remove
ambiguities with respect to identifying the roughness
measurements used and the results achieved.
2.4 This guide does not purport to address safety
issues, if any, associated with its use. It is the
responsibility of the users of this guide to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
3 Limitations
3.1 This guide does not apply to measurements in the
edge region of wafers.
3.2 This guide does not apply to sp atial wavelengths <
10 nm.
3.3 This guide is not intended to d efine specific
roughness parameters; these can be found in other
documents.
3.4 The bandwidth of the measure ment tool and the
bandwidth used can severely influence the result of
roughness measurements.
3.4.1 Differences in either long or short bandwidths
used between two instruments can produce significantly
different results.
3.4.2 The codes listed in Table 1 of this guide do not
identify instrument transfer functions.
3.5 The presence of films may affe ct light scattering
measurements.
4 Discussion
4.1 Roughness of silicon wafer su rfaces is becoming
frequently specified for bare silicon wafers (cf. the SIA
International Technology Roadmap for Semiconduc-
tors). These specifications refer to the roughness of
both the final polished front and the back surfaces of a
wafer. Various techniques are currently used to
measure the surface roughness of silicon wafers. These
techniques include AFM scanning probes, mechanical
and optical profiling, interferometric microscopes, and
light (electromagnetic radiation) scattering. Mechanical
profiling techniques are widely used in other industries
and are well standardized. Profiling techniques are
generally limited to line scans and therefore provide
information of only a very small part of a surface.
Interferometric techniques for roughness measurements
are similarly limited, whereas light scattering
techniques can scan the entire wafer surface.