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SEMI E124-1103 © SEMI 2003 17 RELATED INFORMATION 3 SUPPLEMENTARY INFORMATION NOTICE: This related information is not an official part of SEMI E124 and was deri ved from work by the tas k force. This related inform ation…

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SEMI E124-1103 © SEMI 2003 16
(
)
(
)
(
)
()()
0.9524 0.9400
90.48%
yield line test
efficiency yield yield
=×
≈×
≈
(19)
(
)
(
)
(
)
()()
0.4341 0.9048
39.27%
overall factory volume yield
efficiency efficiency efficiency
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≈×
≈
(20)
SEMI E124-1103 © SEMI 2003 17
RELATED INFORMATION 3
SUPPLEMENTARY INFORMATION
NOTICE: This related information is not an official part of SEMI E124 and was derived from work by the task
force. This related information was approved by full letter ballot procedures on April 11, 2003.
R3-1
R3-1.1 As was mentioned in Section 2.1, there are at
least three things in need of measurement in a factory:
production, utilization of assets, and costs. This guide
focuses on evaluating production; utilization of assets
and costs (as well as other economic factors) are
outside its scope. For measuring effectiveness of asset
use, an average (over all of the equipment in the
factory) of overall equipment efficiency (OEE)
weighted by cost of ownership (COO) can be defined in
one of those documents. However, the use of
consumables, utilities, and human resources would still
need to be comprehended. For measuring costs, some
other new standard might define a new metric (like
COO) for the cost of factory ownership in such terms as
$/(good wafers), $/(good chips), $/(metal levels),
$/(good transistors), $/circuit, or $/bit.
R3-1.2 As was mentioned in Section 3.2, the metrics in
this guide are intended for evaluating the overall health
of the factory production, not for diagnosing problems
(or opportunities for improvement) in the factory,
although some component metrics can be used that
way. These metrics should indicate whether the factory
is running poorly (like taking a person’s temperature
tells whether they are sick) while some of its
components and other diagnostic metrics might indicate
what the cause of the problem is (like doing a blood
analysis in the lab identifies the disease). The
following are examples of metrics not in this guide that
can be used for diagnosis:
• ratio of turns to work in process (WIP) at key
operations or for blocks of operations.
• overall WIP distribution.
• daily starts and output.
• defect density.
• throughput, utilization, and available up-time of
bottleneck equipment.
NOTICE: SEMI makes no warranties or
representations as to the suitability of the standard set
forth herein for any particular application. The
determination of the suitability of the standard is solely
the responsibility of the user. Users are cautioned to
refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature
respecting any materials mentioned herein. These
standards are subject to change without notice.
The user’s attention is called to the possibility that
compliance with this standard may require use of copy-
righted material or of an invention covered by patent
rights. By publication of this standard, SEMI takes no
position respecting the validity of any patent rights or
copyrights asserted in connection with any item
mentioned in this standard. Users of this standard are
expressly advised that determination of any such patent
rights or copyrights, and the risk of infringement of
such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI E129-1103 © SEMI 2003 1
SEMI E129-1103
GUIDE TO ASSESS AND CONTROL ELECTROSTATIC CHARGE IN A
SEMICONDUCTOR MANUFACTURING FACILITY
This guide was technically approved by the Global Metrics Committee and is the direct responsibility of the
North American Metrics Committee. Current edition approved by the North American Regional Standards
Committee on September 3, 2003. Initially available at www.semi.org October 2003; to be published
November 2003.
1 Purpose
1.1 The purpose of this document is to minimize the
negative impact on productivity caused by static charge
in semiconductor manufacturing environments. It is a
guide for establishing electrostatic compatibility in
facilities used for semiconductor manufacturing.
1.2 Electrostatic surface charge causes a number of
undesirable effects in semiconductor manufacturing
environments. Electrostatic discharge (ESD) damages
both products and reticles. ESD events also cause
electromagnetic interference (EMI), resulting in
equipment malfunctions. Charged wafer and reticle
surfaces attract particles (electrostatic attraction or
ESA) and increase the defect rate. Charge on products
can also result in equipment malfunction or product
breakage. Operating problems and additional product
defects due to static charge can have a negative impact
on the cost of ownership of semiconductor
manufacturing equipment (refer to SEMI E35).
1.3 For product and reticle protection or EMI control,
the measurement of the ESD risk of an area is defined
by the presence and nature of the ESD events that
occur. For contamination control by reducing particle
attraction, the static risk of an area is defined by the
presence and level of static charges.
1.4 While an increasing amount of semiconductor
production is done in minienvironments or within the
production equipment, product and reticles must still be
transported throughout the manufacturing facility.
They are both affected by, and the cause of static
problems during transport. Moving personnel in the
manufacturing facility are also sources of static charge
problems. This document addresses the presence of
static charge in the entire facility, including the
production equipment and minienvironments.
1.5 Static control methods can be incorporated in the
factory design to reduce static charge to acceptable
levels. This guide is intended for use primarily by
semiconductor manufacturers and cleanroom facilities
designers during the design of their facilities.
Producers of the silicon wafers and photomasks used in
semiconductor manufacturing will also find it useful.
There are test methods available (see Section 7 and
Related Information 2 of this guide) to demonstrate the
effectiveness of the static control methods. The end
user will be able to use the same test methods to verify
compliance with a facility design specification after the
facility is built or after design changes have been made,
and to verify ongoing compliance as a part of factory
maintenance procedures.
1.6 Semiconductor process technology will continue to
move toward smaller product geometries. Acceptable
static charge levels will decrease with product feature
size. This document will help to assure that facility
static charge limits are appropriate for the product being
manufactured.
2 Scope
2.1 The scope of this document is limited to methods
of measurement and a guide for the maximum
recommended level of static charge on all facility
surfaces including:
• Product, photomasks or their carriers,
• Facility construction materials and furniture,
• Personnel,
• Packaging and transport materials, and
• Equipment (through reference to SEMI E78)
2.2 This document references SEMI E78, SEMI E43
and other methods of measuring static charge as well as
the performance parameters of static control methods.
2.3 Appendix 1 describes the methodology for
determining the maximum recommended static charge
levels that are shown in Section 12.5 Table 1.
NOTE 1: Related Information 1 discusses device sensitivity
measurements, which are the first step in setting
recommended static levels in a facility. Related Information 2
describes static control methods commonly used in
semiconductor manufacturing. Related Information 3
discusses the relationship between ESD and EMI.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the user of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.