semi合集-English.pdf - 第7544页
SEMI MF1809-0704 © SEMI 2003, 2004 9 (100) Wafer; 1100° C Steam, 80 minute Oxidation; Secco Etch with Agitation; ~ 15 µ m removal Figure 21 Bulk Oxidation Stacking Fault, 200 × (100) Wafer; 1100° C Steam, 80 minute Oxida…
SEMI MF1809-0704 © SEMI 2003, 2004 8
p type (100) Wafer; 1100°C, O
2
, 1 minute Oxidation;
Modified Dash Etch; ~ 4 µm removal
Figure 15
Damage Induced Slip Dislocations, 400
×
n type, (111) Wafer; 1100°C, O
2
, 1 minute Oxidation;
Modified Dash Etch; ~ 4 µm removal
Figure 16
Damage Induced Slip Dislocations, 400
×
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Secco
Etch with Agitation; ~ 4 µm removal
Figure 17
Oxidation Stacking Fault, 1000×
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Secco
Etch with Agitation; ~ 4 µm removal
Figure 18
Oxidation Stacking Fault, 400
×
(100) Wafer; Secco Etch without Agitation; ~ 8 µm removal
Figure 19
Flow Pattern Defect, 200
×
(100) Wafer; Secco Etch with Agitation; ~ 4 µm removal
Figure 20
Epitaxial Stacking Fault, 150
×
SEMI MF1809-0704 © SEMI 2003, 2004 9
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Secco
Etch with Agitation; ~ 15 µm removal
Figure 21
Bulk Oxidation Stacking Fault, 200
×
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Secco
Etch with Agitation; ~ 15 µm removal
Figure 22
Scratch Induced Oxidation Stacking Faults, 100
×
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Wright
Etch with Agitation
Figure 23
Damage Induced Oxidation Stacking Fault, 1000×
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Wright
Etch with Agitation
Figure 24
Bulk Oxidation Stacking Fault, 1000
×
Boron doped (100) Wafer; 1100° C Steam, 80 minute
Oxidation; Wright Etch with Agitation
Figure 25
Scratch Induced Oxidation Stacking Faults, 500
×
Antimony doped (100) Wafer; 1100° C Steam, 80 minute
Oxidation; Wright Etch with Agitation
Figure 26
Scratch Induced Oxidation Stacking Faults, 500
×
SEMI MF1809-0704 © SEMI 2003, 2004 10
Low Resistivity Boron Doped (100) Wafer; 1100° C Steam,
80 minute Oxidation; Wright Etch with Agitation
Figure 27
Oxidation Stacking Faults, 500
×
(111) Wafer; 1100° C Steam, 80 minute Oxidation; Wright
Etch with Agitation
Figure 28
Oxidation Induced Stacking Faults, 500
×
(111) Wafer; Wright Etch with Agitation
Figure 29
Slip Dislocations, 500
×
(100) Wafer; Wright Etch with Agitation
Figure 30
Slip Dislocations, 200
×
Boron doped (100) Wafer; 1100° C Steam, 80 minute
Oxidation; Wright Etch with Agitation
Figure 31
Shallow Pits (Haze), 500
×
Boron Doped Wafer; Wright Etch
Figure 32
Etching Stain Artifact, 200
×