semi合集-English.pdf - 第5632页
SEMI P10-0705 © SEMI 1990, 2005 127 8.1.308 EXTERNAL_WINDOW — (x 1,y1,x2,y 2) Area to ha ve all digitized data removed outside the window described by ( x1,y1,x2,y2), r elative to the coor dinate space of DATA_SOURCE _FI…
SEMI P10-0705 © SEMI 1990, 2005 126
8.1.287 ETCH_DEPTH_MODE_USED — (text) operating mode for ETCH_DEPTH_EQUIP_USED.
8.1.288 ETCH_DEPTH_SITE_ID — Unique alphanumeric identifier of each etch depth measurement location
within MASK_SET_ID to identify individual locations when using <mask_results>. If the same coordinates apply
to locations on different masks within the mask set, they may have the same ETCH_DEPTH_SITE_ID, but it is not
mandatory.
8.1.289 ETCH_DEPTH_RANGE — Maximum acceptable variation (in angstroms) of all etch depth measurements,
relative to each other.
8.1.290 ETCH_DEPTH_REFERENCE_ONLY — (T or F) If T, indicates that the etch depth feature is to be
measured and the data transmitted to the customer (if requested by SHIP_PHASE_SHIFT_MEASUREMENTS), but
that deviations in its measured value due to mask processing would NOT be cause for mask rejection.
8.1.291 ETCH_DEPTH_TARGET — Desired mean etch depth in angstroms.
8.1.292 ETCH_DEPTH_TOLERANCE — Maximum acceptable deviation (in angstroms) of the mean of all
measured critical dimensions to the ETCH_DEPTH_TARGET.
8.1.293 EUV_ABSORBER_COMPOSITION (text) — Composition of the absorber stack of an EUV mask, to be
agreed on between customer and supplier, as per SEMI P38.
8.1.294 EUV_ABSORBER_OPTICAL_PROPERTIES — Percentage of absorber reflectivity as defined in Table
11 OF SEMI P38.
8.1.295 EUV_BLANK_RESISTANCE (numeric) — Electrical resistance (in Ohms) measured between the surface
of the absorber stack and the backside of the mask blank.
8.1.296 EUV_BLANK_TYPE — Type of EUV mask blank as defined in Table 1 of SEMI P38.
8.1.297 EUV_CAPPING_COMPOSITION (text) — Composition of capping layers on the multilayer stack of an
EUV mask, to be agreed on between customer and supplier, as per SEMI P38.
8.1.298 EUV_EXPANSION_COEFF — Grade of coefficient of thermal expansion for EUV mask blank as defined
in Table 3 of SEMI P37.
8.1.299 EUV_FLATNESS_BACK — Grade of flatness required for back side of EUV mask within flatness quality
area as per Figure 3 and Table 4 of SEMI P37.
8.1.300 EUV_FLATNESS_FRONT — Grade of flatness required for front side of EUV mask within flatness
quality area as per Figure 3 and Table 4 of SEMI P37.
8.1.301 EUV_MEAN_PEAK_REFLECTIVITY — Grade for percentage reflectivity of the EUV multilayer stack,
as per Table 5 of SEMI P38.
8.1.302 EUV_MMR_WAVELENGTH (wavelength) — Wavelength in nanometers of the mean median reflected of
the multilayer stack of an EUV mask, to be agreed on between customer and supplier, as per SEMI P38.
8.1.303 EUV_MULTILAYER_COMPOSITION (text) — Material composition of the multilayers of an EUV
mask, to be agreed on between customer and supplier, as per SEMI P38.
8.1.304 EUV_PEAK_REFLECTIVITY_UNIFORMITY — Grade of reflectivity uniformity required per Table 6 of
SEMI P38.
8.1.305 EWT_CEILING — (numeric) The maximum monetary amount that can be added to PRICE as an excess
write time charge for the mask. If the charge calculated with EWT_RATE exceeds EWT_CEILING, then
EWT_CEILING is used as the excess write time charge.
8.1.306 EWT_RATE — (numeric) The monetary amount per minute to be added to PRICE for write time
exceeding the EWT_THRESHOLD time. The monetary unit is defined in PRICE_UNITS.
8.1.307
EWT_THRESHOLD — (numeric) The number of minutes that a mask can write before incurring an
Excess Write Time (EWT) charge.
SEMI P10-0705 © SEMI 1990, 2005 127
8.1.308 EXTERNAL_WINDOW — (x1,y1,x2,y2) Area to have all digitized data removed outside the window
described by (x1,y1,x2,y2), relative to the coordinate space of DATA_SOURCE_FILE. The extents of the pattern
file are thus defined by the window.
8.1.309 FAB_TECHNOLOGY – (text) Customer’s designation for the fabrication unit’s wafer manufacturing
process
8.1.310 FIGURE_COUNT — Total number of geometries which are expected in the pattern file. If this is incorrect,
the mask will not be written until it is corrected.
8.1.311 FILE_DATE_TIME — (x,y) Date and time of transmission of mask order. Format will be as in § 6.19.
8.1.312 FILM_COLOR — Color to be used for the mask film.
8.1.313 FILM_NORMAL_TONE — (T or F) If T, digitized data will be dark.
8.1.314 FILM_SCALE — Numeric scale of the film of the mask image.
8.1.315 FILM_SIZE — (x,y) Size in inches of the film.
8.1.316 FINAL_AUDIT_DATE_TIME – (date) The date and time of the finalquality audit prior to shipping the
mask to the customer.
8.1.317 FINAL_QC_AUDITOR — (text) Mask supplier identification of
final Quality Control auditor.
8.1.318 FRACTURE_FILE — Alphanumeric file name of fracture instructions provided by the customer with the
mask order.
8.1.319 FRACTURE_FILE_FORMAT — Format of FRACTURE_FILE (CATS, K2, and others on request).
8.1.320 FRACTURING_SCALE — For optical data (Mann or Electromask) only, this is the scale factor to use in
fracturing the data to E-beam format.
8.1.321 [FTP_DIRECTORY] — Name of target directory for FTP data.
8.1.322 FTP_HOST_NAME — Domain of the FTP host, either in the form n.n.n.n where n is an integer from 0 to
255, or in an equivalent text name if such is supported by the FTP site.
8.1.323 [FTP_LOGIN] — The login name for an FTP account. If an anonymous FTP is used, the data field will be
“anonymous”.
8.1.324 [FTP_MODE] — (ASCII, BINARY or AUTO) Data encoding type for FTP data. If absent, default is
BINARY.
8.1.325 [FTP_PASSWORD] — Password for FTP account.
8.1.326 GOOD_FIELDS — Specifies the 1X reticle fields which must pass inspection criteria and is applied to the
cells immediately instanced by the preceding CELL_ID. Fields are referenced by numbers assigned from left to right
according to their position on the mask, chrome side up. For example, for a mask with 5 fields, the fields would be:
1 2 3 4 5
The required good fields are specified by any logical combination of field numbers, “AND”, “OR”, and parentheses.
In the above example, “(1 OR 2) AND (3 OR 4) AND 5” would require that either 1 or 2 be good, and either 3 or 4
be good, and that 5 be good. No logical precedence is assumed; precedence is defined only by parentheses. This
keyword applies only to 1X reticles.
8.1.327 GUIDES_REQD — (STANDARD, WIDE or BOTH) Applies to 1X reticles only.
8.1.328 INPUT_FILE_FORMAT — Format of INPUT_FILE_NAME.
8.1.329 INPUT_FILE_NAME — (text) Name identifying the input file for RUNSET_NAME. If this keyword
appears in the <mask_order>, it must be explicitly referenced in a RUNSET_NAME and/or a
PARAMETER_FILE_NAME.
8.1.330 INSP_DATABASE_DATA_FORMAT — Alphanumeric description of format for
SHIP_INSP_DATABASE_DATA.
SEMI P10-0705 © SEMI 1990, 2005 128
8.1.331 INSPECT_ALL_SITES — If T, all placements of patterns under this <cell_instance> or
<pattern_instance> require in-spection, regardless of the number of inspection tool setups necessary to do so.
8.1.332 INSPECT_THROUGH_PELLICLE — (T or F) If T, the mask must be inspected through the pellicle and
the <defect_definition> and <database_inspection> keywords to be used must follow the
INSPECT_THROUGH_PELLICLE keyword. Unpelliclized inspection may be separately defined and would
precede the INSPECT_THROUGH_PELLICLE keyword.
8.1.333 INSPECTION_AREA — (x1,y1,x2,y2) Unscaled coordinates of window for defect inspection, lower left
and upper right corners, relative to the nominal center of mask, pattern or cell (chrome side up for masks,
unmirrored for patterns or cells).
8.1.334 INSPECTION_AREA_EXCLUDE — (x1, y1, x2, y2) Unscaled coordinates of window to be excluded
from defect inspection. This is commonly referred to as DNIR (Do Not Inspect Region). (See
INSPECTION_AREA.)
8.1.335 INSPECTION_REF_LOCATION — (x,y) Location of reference mark for defect inspection, relative to the
nominal center of the substrate (chrome side up).
8.1.336 INSPECTION_SETUP_FILENAME — Alphanumeric name of setup file for defect inspection equipment.
8.1.337 JOB_ONLY_APPROVAL_REQD — (T or F) Explicit approval of the mask writing control file must be
given by the customer before the mask is to be written or further processed.
8.1.338 JOB_ONLY_APPROVED — Date approval was granted by customer for
JOB_ONLY_APPROVAL_REQD.
8.1.339 JOB_WITH_PATTERNS_APPROVAL_REQD — (T or F) Explicit approval of the mask writing control
file and all referenced pattern files must be given by the customer before the mask is to be written or further
processed.
8.1.340 JOB_WITH_PATTERNS_APPROVED — Date approval was granted by customer for
JOB_WITH_PATTERNS_APPROVAL_REQD.
8.1.341 JOB_FORMAT — (MEBES, EEBES, ATEQ, and others on request) Format of preceding JOB NAME.
8.1.342 JOB_LEVEL — Level of preceding JOB_NAME to be used to make mask.
8.1.343 JOB_NAME — Name of job file to be used to make mask(s).
8.1.344 LAYER_PRIORITY — Sequence number in which masks are needed. Together with ELAPSED_TIME
determines the mask delivery schedule. The first mask (LAYER_PRIORITY=1) is due within its ELAPSED_TIME
from the time it is ordered or released; the second mask is due within its ELAPSED_TIME from when the first mask
was due, or from when the first mask was delivered, whichever is later; and so on.
8.1.345 LEVEL_ID — Numerical indicator of which masks within the mask set will include this pattern. When a
MASK_ID in a MASK_GROUP, which references this PATTERN_GROUP_ID, matches this LEVEL_ID, this
pattern will appear on the mask. When LEVEL_ID is “A”, the pattern will appear on all masks which reference the
pattern group. A given LEVEL_ID value may appear only once in any pattern group. Appearance of “A” as a
LEVEL_ID value precludes any other patterns from the pattern group.
8.1.346 LINE_ITEM_NUMBER — Integer line item number relative to PO_NUMBER.
8.1.347 LITHO_EQUIP_REQD — (EBEAM, OPTICAL, LASER) Acceptable equipment for writing product
mask(s).
8.1.348 LITHO_EQUIP_USED — Type of equipment used for writing product mask(s). See
LITHO_EQUIP_REQD.
8.1.349 LITHO_MODE_REQD — (SPP,MPP,VA,4PASS,8PASS,1000UM, and others on request.) Acceptable
recipe for LITHO_EQUIP_REQD.
8.1.350
LITHO_MODE_USED — The writing methodology used by the lithography tool.